Bulletin 2009/06 - European Patent Office
Bulletin 2009/06 - European Patent Office
Bulletin 2009/06 - European Patent Office
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(H01B) II.1(1)<br />
Europäisches <strong>Patent</strong>blatt<br />
<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />
<strong>Bulletin</strong> européen des brevets<br />
<strong>Patent</strong>e<br />
<strong>Patent</strong>s<br />
Brevets (<strong>06</strong>/<strong>2009</strong>) 04.02.<strong>2009</strong><br />
• ELEMENT ISOLANT A CONDUCTIVITE<br />
THERMIQUE ELEVEE ET SON PROCEDE<br />
DE FABRICATION, BOBINE ELECTROMA-<br />
GNETIQUE ET DISPOSITIF ELECTROMA-<br />
GNETIQUE<br />
(73) KABUSHIKI KAISHA TOSHIBA, 1-1, Shibaura<br />
1-chome Minato-ku, Tokyo 105-8001, JP<br />
(72) OKAMOTO, Tetsushi, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
TSUCHIYA, Hiroyoshi, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
SAWA, Fumio, Toshiba Corporation, Tokyo<br />
105-8001, JP<br />
IWATA, Noriyuki, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
KOYAMA, Mitsuhiko, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
SUZUKI, Yukio, Toshiba Corporation, Tokyo<br />
105-8001, JP<br />
SUZUKI, Akihiko, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
OOTAKA, Tooru, Toshiba Corporation, Tokyo<br />
105-8001, JP<br />
ISHII, Shigehito, Toshiba Corporation, Tokyo<br />
105-8001, JP<br />
NAGANO, Susumu, Toshiba Corporation,<br />
Tokyo 105-8001, JP<br />
(74) Henkel, Feiler & Hänzel, <strong>Patent</strong>anwälte Maximiliansplatz<br />
21, 80333 München, DE<br />
H01B 17/60 → (51) H01B 3/00<br />
H01B 19/00 → (51) H01B 3/00<br />
H01F 5/<strong>06</strong> → (51) H01B 3/00<br />
H01F 27/32 → (51) H01B 3/00<br />
H01H 19/58 → (51) G01D 5/25<br />
(51) H01L 21/02 (11) 0 916 157 B1<br />
H01L 27/115<br />
(25) En (26) En<br />
(21) 98910907.9 (22) 03.03.1998<br />
(84) DE GB IT NL<br />
(43) 19.05.1999<br />
(86) IB 1998/000515 03.03.1998<br />
(87) WO 1998/039801 1998/36 11.09.1998<br />
(30) 03.03.1997 US 810538<br />
(54) • VERFAHREN ZUR HERSTELLUNG VON<br />
FERROELEKTRISCHEN DÜNNSCHICHT-<br />
KONDENSATOREN MIT VERBESSERTER<br />
SPEICHERUNG DURCH DIE VERWEN-<br />
DUNG VON GLATTEN UNTEREN ELEKT-<br />
RODENSTRUKTUREN<br />
• METHOD OF FABRICATING THIN FILM<br />
FERROELECTRIC CAPACITORS HAVING<br />
IMPROVED MEMORY RETENTION<br />
THROUGH THE USE OF SMOOTH BOTTOM<br />
ELECTRODE STRUCTURES<br />
• PROCEDE DE FABRICATION DES<br />
CONDENSATEURS FERROELECTRIQUES A<br />
COUCHES MINCES A CONSERVATION<br />
AMELIOREE DE L'INFORMATION EN<br />
MEMOIRE PAR L'UTILISATION DE<br />
STRUCTURES D'ELECTRODES DE SOLE<br />
LISSE<br />
(73) Matsushita Electronics Corporation, 1-1,<br />
Saiwai-cho, Takatsuki-shi, Osaka 569, JP<br />
(72) HAYASHI, Shinichiro, Takatsuki Osaka 569-<br />
11, JP<br />
OTSUKI, Tatsuo, Takatsuki Osaka 569-11, JP<br />
(74) Schoppe, Fritz, et al, Schoppe, Zimmermann,<br />
Stöckeler & Zinkler <strong>Patent</strong>anwälte Postfach<br />
246, 82043 Pullach bei München, DE<br />
H01L 21/20 → (51) H01L 23/495<br />
(51) H01L 21/28 (11) 1 417 704 B1<br />
H01L 21/336 H01L 21/8247<br />
H01L 27/115 H01L 29/788<br />
(25) En (26) En<br />
(21) 02735732.6 (22) 04.<strong>06</strong>.2002<br />
(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />
LU MC NL PT SE TR<br />
(43) 12.05.2004<br />
(86) IB 2002/002083 04.<strong>06</strong>.2002<br />
(87) WO 2003/015172 2003/08 20.02.2003<br />
(30) <strong>06</strong>.08.2001 EP 01203000<br />
<strong>06</strong>.08.2001 EP 01203001<br />
02.05.2002 EP 02076742<br />
(54) • Herstellungsverfahren in Spacer-Technik<br />
für einen Festwertspeichertransistor mit<br />
Auswahlgate an einer Seite eines Kontrollgate-Floating-Gate-Stapels<br />
• Method of manufacturing a non-volatile<br />
memory transistor with an access gate on<br />
one side of a control gate/floating-gate<br />
stack using a spacer<br />
• Procédé de fabrication d'un transistor de<br />
mémoire non-volatile ayant une grille<br />
d'accès sur un côté d'un empilement de<br />
grilles flottante et de contrôle utilisant un<br />
espaceur<br />
(73) NXP B.V., High Tech Campus 60, 5656 AG<br />
Eindhoven, NL<br />
(72) VAN SCHAIJK, Robertus, T., F., NL-5656 AA<br />
Eindhoven, NL<br />
(74) van der Veer, Johannis Leendert, et al, NXP<br />
Semiconductors B.V. IP&L Department High<br />
Tech Campus 32, 5656 AE Eindhoven, NL<br />
(51) H01L 21/285 (11) 1 247 292 B1<br />
C23C 16/44 C23C 16/<strong>06</strong><br />
(25) En (26) En<br />
(21) 00983564.6 (22) 15.12.2000<br />
(84) DE FR GB IE<br />
(43) 09.10.2002<br />
(86) KR 2000/001474 15.12.2000<br />
(87) WO 2001/045149 2001/25 21.<strong>06</strong>.2001<br />
(30) 15.12.1999 KR 9957939<br />
21.12.1999 KR 9959862<br />
23.12.1999 KR 9961129<br />
11.01.2000 KR 2000001232<br />
(54) • METHODE ZUR HERSTELLUNG VON<br />
KUPFER-ZWISCHENVERBINDUNGEN UND<br />
DÜNNEN FILMEN MITTELS CVD UND<br />
EINEM KATALYSATOR<br />
• METHOD OF FORMING COPPER INTER-<br />
CONNECTIONS AND THIN FILMS USING<br />
CHEMICAL VAPOR DEPOSITION WITH<br />
CATALYST<br />
• PROCEDE DE FORMATION D'INTERCON-<br />
NEXIONS DE CUIVRE ET DE FILMS<br />
MINCES AU MOYEN D'UN DEPOT CHI-<br />
MIQUE EN PHASE VAPEUR AVEC CATA-<br />
LYSEUR<br />
(73) Genitech Co., Ltd., 1694-5, Shinil-dong,<br />
Taedeok-gu, Taejon 3<strong>06</strong>-230, KR<br />
(72) Koh, Won Yong, Yuseong-gu, Taejon 305-<br />
345, KR<br />
Park, Hyung Sang, Gwangjin-gu, Seoul 143-<br />
203, KR<br />
Lee, Ji Hwa, Gwanak-gu, Seoul 151-765, KR<br />
(74) Kyle, Diana, Elkington and Fife LLP Prospect<br />
House 8 Pembroke Road, Sevenoaks, Kent<br />
TN13 1XR, GB<br />
H01L 21/336 → (51) H01L 21/28<br />
H01L 21/687 → (51) B24B 37/04<br />
H01L 21/8246 → (51) H01L 27/115<br />
H01L 21/8247 → (51) H01L 21/28<br />
H01L 23/02 → (51) H01L 23/495<br />
H01L 23/26 → (51) C22C 16/00<br />
H01L 23/48 → (51) H01L 23/495<br />
(51) H01L 23/495 (11) 1 169 735 B1<br />
H01L 23/02 H01L 25/04<br />
H01L 23/48 H01L 33/00<br />
H01L 21/20 H01L 29/04<br />
H01L 27/14 H01L 31/00<br />
B23B 9/00<br />
(25) En (26) En<br />
(21) 00918129.8 (22) 15.03.2000<br />
(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />
LU MC NL PT SE<br />
(43) 09.01.2002<br />
(86) US 2000/007269 15.03.2000<br />
(87) WO 2000/055914 2000/38 21.09.2000<br />
(30) 15.03.1999 US 124493 P<br />
22.10.1999 US 426795<br />
(54) • HALBLEITER-STRAHLUNGSEMITTER<br />
VERPACKUNG<br />
• SEMICONDUCTOR RADIATION EMITTER<br />
PACKAGE<br />
• BOITIER D'EMETTEUR DE RAYONNEMENT<br />
SEMI-CONDUCTEUR<br />
(73) Gentex Corporation, 600 North Centennial<br />
Street, Zeeland, MI 49464, US<br />
(72) ROBERTS, John, K., East Grand Rapids, MI<br />
495<strong>06</strong>, US<br />
STAM, Joseph, S., Holland, MI 49424, US<br />
REESE, Spencer, D., Fort Wayne, IN 46805,<br />
US<br />
TURNBULL, Robert, R., Holland, MI 49424,<br />
US<br />
(74) Hayes, Adrian Chetwynd, et al, Boult Wade<br />
Tennant, Verulam Gardens 70 Gray's Inn<br />
Road, London WC1X 8BT, GB<br />
H01L 25/04 → (51) H01L 23/495<br />
H01L 27/02 → (51) H01L 27/092<br />
(51) H01L 27/092 (11) 0 951 071 B1<br />
H01L 27/02 H01L 29/786<br />
(25) Ja (26) En<br />
(21) 97913464.0 (22) 27.11.1997<br />
(84) DE FR GB NL<br />
(43) 20.10.1999<br />
(86) JP 1997/004344 27.11.1997<br />
(87) WO 1998/025307 1998/23 11.<strong>06</strong>.1998<br />
(30) 04.12.1996 JP 32446596<br />
(54) • HALBLEITERVORRICHTUNG<br />
• SEMICONDUCTOR DEVICE<br />
• SEMI-CONDUCTEUR<br />
(73) Sharp Kabushiki Kaisha, 22-22 Nagaike-cho,<br />
Abeno-ku, Osaka-shi, Osaka-fu 545-0013, JP<br />
(72) IWATA, Hiroshi, Ikoma-gun, Nara-ken 636,<br />
JP<br />
KAKIMOTO, Seizou, Shiki-gun, Nara-ken<br />
636-03, JP<br />
NAKANO, Masayuki, 109 -1 Nishikitsujicho<br />
Nara-shi Nara-ken, JP<br />
MATSUOKA, Toshimasa, Yao-shi, Osaka<br />
581, JP<br />
(74) Müller, Frithjof E., Müller Hoffmann &<br />
Partner <strong>Patent</strong>anwälte Innere Wiener Strasse<br />
17, 81667 München, DE<br />
(51) H01L 27/115 (11) 1 466 367 B1<br />
H01L 21/8246<br />
(25) De (26) De<br />
(21) 02791620.4 (22) 10.12.2002<br />
(84) DE FR<br />
(43) 13.10.2004<br />
(86) DE 2002/004521 10.12.2002<br />
(87) WO 2003/<strong>06</strong>1011 2003/30 24.07.2003<br />
(30) 15.01.2002 DE 10201303<br />
243
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