Bulletin 2009/06 - European Patent Office
Bulletin 2009/06 - European Patent Office
Bulletin 2009/06 - European Patent Office
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(H01L) I.1(1)<br />
Europäisches <strong>Patent</strong>blatt<br />
<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />
<strong>Bulletin</strong> européen des brevets<br />
Anmeldungen<br />
Applications<br />
Demandes (<strong>06</strong>/<strong>2009</strong>) 04.02.<strong>2009</strong><br />
Belov, Nicolai, 118 Plazoleta, Los Gatos, CA<br />
95032, US<br />
(72) Vaganov, Vladimir, Los Gatos, CA 95032, US<br />
Belov, Nicolai, Los Gatos, CA 95032, US<br />
(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />
Arabellastrasse 4, 81925 München, DE<br />
H01L 23/04 → (51) H01L 23/02<br />
H01L 23/057 → (51) B81B 7/00<br />
H01L 23/28 → (51) H01L 23/02<br />
H01L 23/48 → (51) H01L 23/02<br />
H01L 23/48 → (51) H01L 23/52<br />
(51) H01L 23/52 (11) 2 020 026 A2*<br />
H01L 23/48<br />
(25) En (26) En<br />
(21) 07759809.2 (22) 30.03.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) US 2007/<strong>06</strong>5619 30.03.2007<br />
(87) WO 2007/136932 2007/48 29.11.2007<br />
(30) 16.05.20<strong>06</strong> US 383656<br />
16.05.20<strong>06</strong> US 383653<br />
(54) • INTEGRIERTE SCHALTUNG MIT KON-<br />
TAKTSTELLEN UND EIN-/AUSGABEZEL-<br />
LEN<br />
• INTEGRATED CIRCUIT HAVING PADS AND<br />
INPUT/OUTPUT (I/O) CELLS<br />
• CIRCUIT INTÉGRÉ POSSÉDANT DES PLA-<br />
GES D'INTERCONNEXION ET DES CELLU-<br />
LES D'ENTRÉE/SORTIE (E/S)<br />
(71) Freescale Semiconductor, Inc., 6501 William<br />
Cannon Drive West, Austin, TX 78735, US<br />
(72) TRAN, Tu-Anh N., Austin, Texas 78754, US<br />
VO, Nhat D., Austin, Texas 78705, US<br />
CARPENTER, Burton J., Austin, Texas<br />
78754, US<br />
HONG, Dae Y., Austin, Texas 78749, US<br />
MILLER, James W., Austin, Texas 78705, US<br />
PHILLIPS, Kendall D., Driftwood, Texas<br />
78619, US<br />
(74) Ferro, Frodo Nunes, Freescale Semiconductor<br />
Inc c/o Impetus IP Ltd Groove House<br />
Lutyens Close Chineham Court, Basingstoke,<br />
RG24 8AG, GB<br />
(51) H01L 23/52 (11) 2 020 027 A2*<br />
H01L 23/48 H01L 29/40<br />
(25) En (26) En<br />
(21) 0787<strong>06</strong>67.8 (22) 11.05.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) US 2007/011437 11.05.2007<br />
(87) WO 2008/<strong>06</strong>9832 2008/24 12.<strong>06</strong>.2008<br />
(88) 30.10.2008<br />
(30) 17.05.20<strong>06</strong> US 435410<br />
(54) • STRUKTUR UND VERFAHREN ZUR<br />
ERZEUGUNG ZUVERLÄSSIGER PFAD-<br />
KONTAKTE FÜR VERBINDUNGSANWEN-<br />
DUNGEN<br />
• STRUCTURE AND METHOD FOR CREAT-<br />
ING RELIABLE VIA CONTACTS FOR<br />
INTERCONNECT APPLICATIONS<br />
• STRUCTURE ET PROCÉDÉ PERMETTANT<br />
DE CRÉER DES CONTACTS DE TRAVER-<br />
SÉES FIABLES POUR DES APPLICATIONS<br />
D'INTERCONNEXION<br />
(71) International Business Machines Corporation,<br />
New Orchard Road, Armonk, NY 10504,<br />
US<br />
(72) YANG, Chih-Chao, Poughkeepsie, NY 12603,<br />
US<br />
VAN DER STRATEN, Oscar, Mohegan Lake,<br />
NY 10547, US<br />
(74) Litherland, David Peter, IBM United Kingdom<br />
Limited Intellectual Property Department<br />
Hursley Park, Winchester, Hampshire SO21<br />
2JN, GB<br />
H01L 23/52 → (51) H01L 23/02<br />
(51) H01L 23/522 (11) 2 020 028 A2*<br />
H01L 23/538 H01L 23/552<br />
H01L 25/16 H01L 27/088<br />
(25) En (26) En<br />
(21) 07735892.7 (22) 14.05.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) IB 2007/051821 14.05.2007<br />
(87) WO 2007/132423 2007/47 22.11.2007<br />
(88) 28.02.2008<br />
(30) 15.05.20<strong>06</strong> EP <strong>06</strong>113955<br />
(54) • BAUGRUPPE, CHIP UND BETRIEBSVER-<br />
FAHREN<br />
• ASSEMBLY, CHIP AND METHOD OF<br />
OPERATING<br />
• ENSEMBLE, PUCE ET PROCÉDÉ DE<br />
FONCTIONNEMENT<br />
(71) NXP B.V., High Tech Campus 60, 5656 AG<br />
Eindhoven, NL<br />
(72) REEFMAN, Derk, 5656 AG Eindhoven, NL<br />
ROOZEBOOM, Freddy, 5656 AG Eindhoven,<br />
NL<br />
KLOOTWIJK, Johan, H., 5656 AG Eindhoven,<br />
NL<br />
(74) White, Andrew Gordon, NXP Semiconductors<br />
UK Ltd Betchworth House Station Road,<br />
Redhill Surrey RH1 1DL, GB<br />
H01L 23/538 → (51) H01L 23/522<br />
H01L 23/552 → (51) H01L 23/522<br />
(51) H01L 23/62 (11) 2 020 029 A2*<br />
(25) En (26) En<br />
(21) 07761243.0 (22) 25.04.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) US 2007/<strong>06</strong>7361 25.04.2007<br />
(87) WO 2007/127770 2007/45 08.11.2007<br />
(88) 13.11.2008<br />
(30) 26.04.20<strong>06</strong> US 380278<br />
(54) • VERBESSERTE CMOS-DIODEN MIT DOP-<br />
PELGATE-LEITERN UND VERFAHREN ZU<br />
IHRER HERSTELLUNG<br />
• IMPROVED CMOS DIODES WITH DUAL<br />
GATE CONDUCTORS, AND METHODS FOR<br />
FORMING THE SAME<br />
• DIODES CMOS AMELIOREES A DOUBLE<br />
GRILLE, ET METHODES DE FORMATION<br />
DE CELLES-CI<br />
(71) International Business Machines Corporation,<br />
New Orchard Road, Armonk, NY 10504,<br />
US<br />
(72) ONSONGO, David, M., Newburgh, NY 12550,<br />
US<br />
RAUSCH, Werner, Stormville, NY 12582, US<br />
YANG, Haining, S., Wappingers Falls, NY<br />
12590, US<br />
(74) Ling, Christopher John, IBM United Kingdom<br />
Limited Intellectual Property Law Hursley<br />
Park, Winchester Hampshire SO21 2JN, GB<br />
H01L 25/16 → (51) H01L 23/522<br />
H01L 27/01 → (51) H01L 27/12<br />
(51) H01L 27/<strong>06</strong> (11) 2 020 030 A2*<br />
(25) En (26) En<br />
(21) 07777247.3 (22) 22.05.2007<br />
(84) DE FR GB<br />
(86) US 2007/012347 22.05.2007<br />
(87) WO 2007/139862 2007/49 <strong>06</strong>.12.2007<br />
(88) 02.05.2008<br />
(30) 22.05.20<strong>06</strong> US 438167<br />
(54) • INTEGRIERTE SCHALTVERBINDUNG<br />
• INTEGRATED CIRCUIT INTERCONNECT<br />
• INTERCONNEXION DE CIRCUIT INTÉGRÉ<br />
(71) HEWLETT-PACKARD DEVELOPMENT COM-<br />
PANY, L.P., 20555 S.H. 249, Houston TX<br />
77070, US<br />
(72) KAMINS, Theodore I, Palo Alto, California<br />
94034, US<br />
KUEKES, Philip J, Palo Alto, California<br />
94034, US<br />
(74) Schoppe, Fritz, Schoppe, Zimmermann,<br />
Stöckeler & Zinkler <strong>Patent</strong>anwälte Postfach<br />
246, 82043 Pullach bei München, DE<br />
H01L 27/088 → (51) H01L 23/522<br />
(51) H01L 27/12 (11) 2 020 031 A2*<br />
H01L 27/01 H01L 29/00<br />
H01L 29/04 H01L 31/036<br />
(25) En (26) En<br />
(21) 07761242.2 (22) 25.04.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) US 2007/<strong>06</strong>7360 25.04.2007<br />
(87) WO 2007/127769 2007/45 08.11.2007<br />
(88) 02.10.2008<br />
(30) 28.04.20<strong>06</strong> US 38<strong>06</strong>92<br />
(54) • 3D-HOCHLEISTUNGS-FET-STRUKTUREN<br />
UND VERFAHREN ZU IHRER HERSTEL-<br />
LUNG ANHAND VON BEVORZUGTEM<br />
KRISTALLOGRAFISCHEM ÄTZEN<br />
• HIGH PERFORMANCE 3D FET STRUC-<br />
TURES, AND METHODS FOR FORMING<br />
THE SAME USING PREFERENTIAL CRYS-<br />
TALLOGRAPHIC ETCHING<br />
• STRUCTURES FET TRIDIMENSIONNELLES<br />
HAUTE PERFORMANCE, ET PROCEDES DE<br />
FORMATION DE CELLES-CI PAR ATTAQUE<br />
CRISTALLOGRAPHIQUE PREFERENTIELLE<br />
(71) International Business Machines Corporation,<br />
New Orchard Road, Armonk, NY 10504,<br />
US<br />
(72) DYER, Thomas W., Pleasant Valley, NY<br />
12569, US<br />
YANG, Haining S., Wappingers Falls, NY<br />
12590, US<br />
(74) Ling, Christopher John, IBM United Kingdom<br />
Limited Intellectual Property Law Hursley<br />
Park, Winchester Hampshire SO21 2JN, GB<br />
(51) H01L 27/146 (11) 2 020 032 A1*<br />
(25) En (26) En<br />
(21) 07755216.4 (22) 09.04.2007<br />
(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />
GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />
RO SE SI SK TR<br />
AL BA HR MK RS<br />
(86) US 2007/008865 09.04.2007<br />
(87) WO 2007/127051 2007/45 08.11.2007<br />
(30) 21.04.20<strong>06</strong> US 408194<br />
(54) • N-MULDEN-BARRIEREN-PIXEL FÜR VER-<br />
BESSERTEN SCHUTZ VON DUNKELREFE-<br />
RENZSPALTEN UND ZEILEN VOR<br />
ÜBERSTRAHLUNG UND ÜBERSPRECHEN<br />
76