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Bulletin 2009/06 - European Patent Office

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(H01L) I.1(1)<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>06</strong>/<strong>2009</strong>) 04.02.<strong>2009</strong><br />

Belov, Nicolai, 118 Plazoleta, Los Gatos, CA<br />

95032, US<br />

(72) Vaganov, Vladimir, Los Gatos, CA 95032, US<br />

Belov, Nicolai, Los Gatos, CA 95032, US<br />

(74) HOFFMANN EITLE, <strong>Patent</strong>- und Rechtsanwälte<br />

Arabellastrasse 4, 81925 München, DE<br />

H01L 23/04 → (51) H01L 23/02<br />

H01L 23/057 → (51) B81B 7/00<br />

H01L 23/28 → (51) H01L 23/02<br />

H01L 23/48 → (51) H01L 23/02<br />

H01L 23/48 → (51) H01L 23/52<br />

(51) H01L 23/52 (11) 2 020 026 A2*<br />

H01L 23/48<br />

(25) En (26) En<br />

(21) 07759809.2 (22) 30.03.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 2007/<strong>06</strong>5619 30.03.2007<br />

(87) WO 2007/136932 2007/48 29.11.2007<br />

(30) 16.05.20<strong>06</strong> US 383656<br />

16.05.20<strong>06</strong> US 383653<br />

(54) • INTEGRIERTE SCHALTUNG MIT KON-<br />

TAKTSTELLEN UND EIN-/AUSGABEZEL-<br />

LEN<br />

• INTEGRATED CIRCUIT HAVING PADS AND<br />

INPUT/OUTPUT (I/O) CELLS<br />

• CIRCUIT INTÉGRÉ POSSÉDANT DES PLA-<br />

GES D'INTERCONNEXION ET DES CELLU-<br />

LES D'ENTRÉE/SORTIE (E/S)<br />

(71) Freescale Semiconductor, Inc., 6501 William<br />

Cannon Drive West, Austin, TX 78735, US<br />

(72) TRAN, Tu-Anh N., Austin, Texas 78754, US<br />

VO, Nhat D., Austin, Texas 78705, US<br />

CARPENTER, Burton J., Austin, Texas<br />

78754, US<br />

HONG, Dae Y., Austin, Texas 78749, US<br />

MILLER, James W., Austin, Texas 78705, US<br />

PHILLIPS, Kendall D., Driftwood, Texas<br />

78619, US<br />

(74) Ferro, Frodo Nunes, Freescale Semiconductor<br />

Inc c/o Impetus IP Ltd Groove House<br />

Lutyens Close Chineham Court, Basingstoke,<br />

RG24 8AG, GB<br />

(51) H01L 23/52 (11) 2 020 027 A2*<br />

H01L 23/48 H01L 29/40<br />

(25) En (26) En<br />

(21) 0787<strong>06</strong>67.8 (22) 11.05.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 2007/011437 11.05.2007<br />

(87) WO 2008/<strong>06</strong>9832 2008/24 12.<strong>06</strong>.2008<br />

(88) 30.10.2008<br />

(30) 17.05.20<strong>06</strong> US 435410<br />

(54) • STRUKTUR UND VERFAHREN ZUR<br />

ERZEUGUNG ZUVERLÄSSIGER PFAD-<br />

KONTAKTE FÜR VERBINDUNGSANWEN-<br />

DUNGEN<br />

• STRUCTURE AND METHOD FOR CREAT-<br />

ING RELIABLE VIA CONTACTS FOR<br />

INTERCONNECT APPLICATIONS<br />

• STRUCTURE ET PROCÉDÉ PERMETTANT<br />

DE CRÉER DES CONTACTS DE TRAVER-<br />

SÉES FIABLES POUR DES APPLICATIONS<br />

D'INTERCONNEXION<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) YANG, Chih-Chao, Poughkeepsie, NY 12603,<br />

US<br />

VAN DER STRATEN, Oscar, Mohegan Lake,<br />

NY 10547, US<br />

(74) Litherland, David Peter, IBM United Kingdom<br />

Limited Intellectual Property Department<br />

Hursley Park, Winchester, Hampshire SO21<br />

2JN, GB<br />

H01L 23/52 → (51) H01L 23/02<br />

(51) H01L 23/522 (11) 2 020 028 A2*<br />

H01L 23/538 H01L 23/552<br />

H01L 25/16 H01L 27/088<br />

(25) En (26) En<br />

(21) 07735892.7 (22) 14.05.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) IB 2007/051821 14.05.2007<br />

(87) WO 2007/132423 2007/47 22.11.2007<br />

(88) 28.02.2008<br />

(30) 15.05.20<strong>06</strong> EP <strong>06</strong>113955<br />

(54) • BAUGRUPPE, CHIP UND BETRIEBSVER-<br />

FAHREN<br />

• ASSEMBLY, CHIP AND METHOD OF<br />

OPERATING<br />

• ENSEMBLE, PUCE ET PROCÉDÉ DE<br />

FONCTIONNEMENT<br />

(71) NXP B.V., High Tech Campus 60, 5656 AG<br />

Eindhoven, NL<br />

(72) REEFMAN, Derk, 5656 AG Eindhoven, NL<br />

ROOZEBOOM, Freddy, 5656 AG Eindhoven,<br />

NL<br />

KLOOTWIJK, Johan, H., 5656 AG Eindhoven,<br />

NL<br />

(74) White, Andrew Gordon, NXP Semiconductors<br />

UK Ltd Betchworth House Station Road,<br />

Redhill Surrey RH1 1DL, GB<br />

H01L 23/538 → (51) H01L 23/522<br />

H01L 23/552 → (51) H01L 23/522<br />

(51) H01L 23/62 (11) 2 020 029 A2*<br />

(25) En (26) En<br />

(21) 07761243.0 (22) 25.04.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 2007/<strong>06</strong>7361 25.04.2007<br />

(87) WO 2007/127770 2007/45 08.11.2007<br />

(88) 13.11.2008<br />

(30) 26.04.20<strong>06</strong> US 380278<br />

(54) • VERBESSERTE CMOS-DIODEN MIT DOP-<br />

PELGATE-LEITERN UND VERFAHREN ZU<br />

IHRER HERSTELLUNG<br />

• IMPROVED CMOS DIODES WITH DUAL<br />

GATE CONDUCTORS, AND METHODS FOR<br />

FORMING THE SAME<br />

• DIODES CMOS AMELIOREES A DOUBLE<br />

GRILLE, ET METHODES DE FORMATION<br />

DE CELLES-CI<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) ONSONGO, David, M., Newburgh, NY 12550,<br />

US<br />

RAUSCH, Werner, Stormville, NY 12582, US<br />

YANG, Haining, S., Wappingers Falls, NY<br />

12590, US<br />

(74) Ling, Christopher John, IBM United Kingdom<br />

Limited Intellectual Property Law Hursley<br />

Park, Winchester Hampshire SO21 2JN, GB<br />

H01L 25/16 → (51) H01L 23/522<br />

H01L 27/01 → (51) H01L 27/12<br />

(51) H01L 27/<strong>06</strong> (11) 2 020 030 A2*<br />

(25) En (26) En<br />

(21) 07777247.3 (22) 22.05.2007<br />

(84) DE FR GB<br />

(86) US 2007/012347 22.05.2007<br />

(87) WO 2007/139862 2007/49 <strong>06</strong>.12.2007<br />

(88) 02.05.2008<br />

(30) 22.05.20<strong>06</strong> US 438167<br />

(54) • INTEGRIERTE SCHALTVERBINDUNG<br />

• INTEGRATED CIRCUIT INTERCONNECT<br />

• INTERCONNEXION DE CIRCUIT INTÉGRÉ<br />

(71) HEWLETT-PACKARD DEVELOPMENT COM-<br />

PANY, L.P., 20555 S.H. 249, Houston TX<br />

77070, US<br />

(72) KAMINS, Theodore I, Palo Alto, California<br />

94034, US<br />

KUEKES, Philip J, Palo Alto, California<br />

94034, US<br />

(74) Schoppe, Fritz, Schoppe, Zimmermann,<br />

Stöckeler & Zinkler <strong>Patent</strong>anwälte Postfach<br />

246, 82043 Pullach bei München, DE<br />

H01L 27/088 → (51) H01L 23/522<br />

(51) H01L 27/12 (11) 2 020 031 A2*<br />

H01L 27/01 H01L 29/00<br />

H01L 29/04 H01L 31/036<br />

(25) En (26) En<br />

(21) 07761242.2 (22) 25.04.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 2007/<strong>06</strong>7360 25.04.2007<br />

(87) WO 2007/127769 2007/45 08.11.2007<br />

(88) 02.10.2008<br />

(30) 28.04.20<strong>06</strong> US 38<strong>06</strong>92<br />

(54) • 3D-HOCHLEISTUNGS-FET-STRUKTUREN<br />

UND VERFAHREN ZU IHRER HERSTEL-<br />

LUNG ANHAND VON BEVORZUGTEM<br />

KRISTALLOGRAFISCHEM ÄTZEN<br />

• HIGH PERFORMANCE 3D FET STRUC-<br />

TURES, AND METHODS FOR FORMING<br />

THE SAME USING PREFERENTIAL CRYS-<br />

TALLOGRAPHIC ETCHING<br />

• STRUCTURES FET TRIDIMENSIONNELLES<br />

HAUTE PERFORMANCE, ET PROCEDES DE<br />

FORMATION DE CELLES-CI PAR ATTAQUE<br />

CRISTALLOGRAPHIQUE PREFERENTIELLE<br />

(71) International Business Machines Corporation,<br />

New Orchard Road, Armonk, NY 10504,<br />

US<br />

(72) DYER, Thomas W., Pleasant Valley, NY<br />

12569, US<br />

YANG, Haining S., Wappingers Falls, NY<br />

12590, US<br />

(74) Ling, Christopher John, IBM United Kingdom<br />

Limited Intellectual Property Law Hursley<br />

Park, Winchester Hampshire SO21 2JN, GB<br />

(51) H01L 27/146 (11) 2 020 032 A1*<br />

(25) En (26) En<br />

(21) 07755216.4 (22) 09.04.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL PT<br />

RO SE SI SK TR<br />

AL BA HR MK RS<br />

(86) US 2007/008865 09.04.2007<br />

(87) WO 2007/127051 2007/45 08.11.2007<br />

(30) 21.04.20<strong>06</strong> US 408194<br />

(54) • N-MULDEN-BARRIEREN-PIXEL FÜR VER-<br />

BESSERTEN SCHUTZ VON DUNKELREFE-<br />

RENZSPALTEN UND ZEILEN VOR<br />

ÜBERSTRAHLUNG UND ÜBERSPRECHEN<br />

76

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