European Patent Bulletin 2012/36 - European Patent Office
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European Patent Bulletin 2012/36 - European Patent Office

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(H01L) I.1(2)<br />

(54) HERSTELLUNGSVERFAHREN FÜR EIN<br />

SILICIUMCARBIDSUBSTRAT UND SILICI-<br />

UMCARBIDSUBSTRAT<br />

SILICON CARBIDE SUBSTRATE<br />

PRODUCTION METHOD AND SILICON<br />

CARBIDE SUBSTRATE<br />

SUBSTRAT DE CARBURE DE SILICIUM<br />

ET PROCÉDÉ DE FABRICATION ASSOCIÉ<br />

(71) Sumitomo Electric Industries, Ltd., 5-33<br />

Kitahama 4-chome Chuo-ku, Osaka-shi,<br />

Osaka 541-0041, JP<br />

(72) HARADA, Shin, Osaka-shi Osaka 554-0024,<br />

JP<br />

SASAKI, Makoto, Itami-shi Hyogo 664-0016,<br />

JP<br />

NISHIGUCHI, Taro, Itami-shi Hyogo 664-<br />

0016, JP<br />

TAMASO, Hideto, Osaka-shi Osaka 554-<br />

0024, JP<br />

NAMIKAWA, Yasuo, Osaka-shi Osaka 554-<br />

0024, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser,<br />

Leopoldstrasse 4, 80802 München,<br />

DE<br />

(51) H01L 21/02 (11) 2 495 751 A1<br />

G05B 19/418 G06Q 50/00<br />

(25) Ja (26) En<br />

(21) 10826559.6 (22) 19.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

(86) JP 2010/068358 19.10.2010<br />

(87) WO 2011/052427 2011/18 05.05.2011<br />

(30) 26.10.2009 JP 2009245588<br />

(54) PRODUKTHERSTELLUNGSVERFAHREN<br />

UND PRODUKTHERSTELLUNGSSYSTEM<br />

PRODUCT MANUFACTURING METHOD<br />

AND MANUFACTURING SYSTEM<br />

PROCÉDÉ DE PRODUCTION ET SYSTÈME<br />

DE FABRICATION DE PRODUIT<br />

(71) Sharp Kabushiki Kaisha, 22-22, Nagaike-cho<br />

Abeno-ku, Osaka-shi, Osaka 545-8522, JP<br />

(72) KAWASAKI, Takashi, Osaka-shi, Osaka 545-<br />

8522, JP<br />

BAN, Chiharu, Osaka-shi, Osaka 545-8522,<br />

JP<br />

URABE, Masuhiro, Osaka-shi, Osaka 545-<br />

8522, JP<br />

MIYASHOH, Tomoaki, Osaka-shi, Osaka<br />

545-8522, JP<br />

(74) Müller-Boré & Partner <strong>Patent</strong>anwälte, Grafinger<br />

Straße 2, 81671 München, DE<br />

(51) H01L 21/02 (11) 2 495 752 A1<br />

B23K 20/00 B23K 20/14<br />

B23K 20/24 B81C 3/00<br />

H01L 21/677<br />

(25) Ja (26) En<br />

(21) 10826759.2 (22) 27.10.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

(86) JP 2010/069039 27.10.2010<br />

(87) WO 2011/052627 2011/18 05.05.2011<br />

(30) 28.10.2009 JP 2009247855<br />

(54) STEUERGERÄT FÜR EINE BINDEVOR-<br />

RICHTUNG UND MEHRSCHICHTBIN-<br />

DUNGSVERFAHREN<br />

CONTROLLER FOR BONDING<br />

APPARATUS AND MULTILAYER<br />

BONDING METHOD<br />

DISPOSITIF DE COMMANDE POUR<br />

APPAREIL DE COLLAGE, ET PROCÉDÉ DE<br />

COLLAGE MULTICOUCHE<br />

(71) Mitsubishi Heavy Industries, Ltd., 16-5,<br />

Konan 2-chome Minato-ku, Tokyo 108-<br />

8215, JP<br />

(72) KINOUCHI Masato, Tokyo 108-8215, JP<br />

GOTO Takayuki, Tokyo 108-8215, JP<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

TSUNO Takeshi, Tokyo 108-8215, JP<br />

IDE Kensuke, Tokyo 108-8215, JP<br />

SUZUKI Takenori, Tokyo 108-8215, JP<br />

(74) Henkel, Breuer & Partner, <strong>Patent</strong>anwälte<br />

Maximiliansplatz 21, 80333 München, DE<br />

(51) H01L 21/02 (11) 2 495 753 A2<br />

H01L 21/20<br />

(25) En (26) En<br />

(21) 12157244.0 (22) 28.02.<strong>2012</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 03.03.2011 US 201161449046 P<br />

24.02.<strong>2012</strong> US <strong>2012</strong>13405180<br />

(54) III-Nitrid-Halbleiterstrukturen mit Strangaufnahmezwischenschicht-Übergangsmodulen<br />

III-Nitride Semiconductor Structures with<br />

Strain Absorbing Interlayer Transition<br />

Modules<br />

Structures à semi-conducteur au nitrure<br />

III avec modules de transition de couche<br />

intermédiaire d'absorption de contrainte<br />

(71) International Rectifier Corporation, 101 N.<br />

Sepulveda Blvd., El Segundo, CA 90245, US<br />

(72) Briere, Michael A., Scottsdale, AZ 85266, US<br />

(74) Dr. Weitzel & Partner, <strong>Patent</strong>anwälte Friedenstrasse<br />

10, 89522 Heidenheim, DE<br />

H01L 21/027 → (51) C03B 20/00<br />

H01L 21/027 → (51) G02B 1/10<br />

(51) H01L 21/033 (11) 2 495 754 A2<br />

H01L 21/3213<br />

(25) Fr (26) Fr<br />

(21) 12155129.5 (22) 13.02.<strong>2012</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 04.03.2011 FR 1100662<br />

(54) Herstellungsverfahren eines integrierten<br />

Schaltkreises, das auf der Bildung von<br />

Leitungen und Gräben beruht<br />

Manufacturing method of integrated<br />

circuits based on formation of lines and<br />

trenches<br />

Procede de fabrication d'un circuit integre<br />

base sur la formation de lignes et de<br />

tranchees<br />

(71) STMicroelectronics (Crolles 2) SAS, 850, rue<br />

Jean Monnet, 38920 Crolles, FR<br />

(72) Gouraud, Pascal, 38330 Montbonnot St<br />

Martin, FR<br />

Le-Gratiet, Bertrand, 38100 GRENOBLE, FR<br />

(74) de Roquemaurel, Bruno, et al, Omnipat 24<br />

place des Martyrs de la Résistance, FR-<br />

13100 Aix en Provence, FR<br />

H01L 21/20 → (51) H01L 21/02<br />

(51) H01L 21/205 (11) 2 495 755 A1<br />

H01L 21/683 H01L 21/687<br />

(25) Ko (26) En<br />

(21) 09850888.0 (22) 28.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(86) KR 2009/006260 28.10.2009<br />

(87) WO 2011/052817 2011/18 05.05.2011<br />

(54) METALLOORGANISCHE VORRICHTUNG<br />

ZUR ABLAGERUNG CHEMISCHER<br />

DÄMPFE UND TEMPERATURSTEUE-<br />

RUNGSVERFAHREN DAFÜR<br />

METAL ORGANIC CHEMICAL VAPOR<br />

DEPOSITION DEVICE AND<br />

340<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>36</strong>/<strong>2012</strong>) 05.09.<strong>2012</strong><br />

TEMPERATURE CONTROL METHOD<br />

THEREFOR<br />

DISPOSITIF DE DÉPÔT CHIMIQUE EN<br />

PHASE VAPEUR PAR COMPOSÉS ORGA-<br />

NOMÉTALLIQUES ET PROCÉDÉ DE<br />

RÉGULATION DE TEMPÉRATURE<br />

ASSOCIÉ<br />

(71) Ligadp Co., Ltd, 333-5 Sangdaewon-dong<br />

Joongwon-gu, Seongnam-si, Gyeonggi-do<br />

462-807, KR<br />

(72) HONG, Sung Jae, Seongnam-si Gyeonggi-do<br />

462-8<strong>36</strong>, KR<br />

(74) Zimmermann, Tankred Klaus, et al, Schoppe,<br />

Zimmermann, Stöckeler Zinkler & Partner<br />

P.O. Box 246, 82043 Pullach, DE<br />

H01L 21/205 → (51) H01L 21/02<br />

(51) H01L 21/28 (11) 2 495 756 A2<br />

H01L 29/792 H01L 29/423<br />

H01L 29/66<br />

(25) En (26) En<br />

(21) 11187603.3 (22) 03.11.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 03.03.2011 US 449074 P<br />

(54) Nichtflüchtige Speicherstruktur und Verfahren<br />

zu deren Herstellung<br />

Non-volatile memory structure and<br />

method for manufacturing the same<br />

Structure à mémoire non volatile et son<br />

procédé de fabrication<br />

(71) eMemory Technology Inc., Room 305, No.<br />

47 Park Avenue II Rd. Hsinchu Science Park,<br />

Hsin-Chu 30075, TW<br />

(72) Lu, Hau-Yan, 300 Hsinchu City, TW<br />

Chen, Hsin-Ming, 300 Hsinchu City, TW<br />

Yang, Ching-Sung, 300 Hsinchu City, TW<br />

(74) Becker Kurig Straus, Bavariastrasse 7,<br />

803<strong>36</strong> München, DE<br />

H01L 21/304 → (51) B24B 27/06<br />

(51) H01L 21/3065 (11) 2 495 757 A1<br />

(25) Ja (26) En<br />

(21) 10826431.8 (22) 06.09.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

(86) JP 2010/065203 06.09.2010<br />

(87) WO 2011/052296 2011/18 05.05.2011<br />

(30) 27.10.2009 JP 2009246096<br />

(54) PLASMAÄTZVERFAHREN<br />

PLASMA ETCHING METHOD<br />

PROCÉDÉ DE GRAVURE AU PLASMA<br />

(71) SPP Technologies Co., Ltd., 8-11 Harumi 1-<br />

Chome Chuo-ku, Tokyo 104-6108, JP<br />

(72) OISHI, Akimitsu, Amagasaki-shi Hyogo 660-<br />

0891, JP<br />

MURAKAMI, Shoichi, Amagasaki-shi Hyogo<br />

660-0891, JP<br />

HATASHITA, Masayasu, Amagasaki-shi<br />

Hyogo 660-0891, JP<br />

(74) Isarpatent, <strong>Patent</strong>- und Rechtsanwälte Postfach<br />

44 01 51, 80750 München, DE<br />

H01L 21/311 → (51) H01B 5/00<br />

H01L 21/3213 → (51) H01L 21/033<br />

H01L 21/3<strong>36</strong> → (51) H01L 21/02<br />

H01L 21/60 → (51) H01B 5/00<br />

H01L 21/60 → (51) H01R 11/01<br />

H01L 21/677 → (51) H01L 21/02

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