European Patent Bulletin 2012/36 - European Patent Office
09.02.2013 • Views
Share Embed Flag

European Patent Bulletin 2012/36 - European Patent Office

European Patent Bulletin 2012/36 - European Patent Office

European Patent Bulletin 2012/36 - European Patent Office

SHOW MORE
SHOW LESS
ePAPER READ
DOWNLOAD ePAPER
application.epo.org

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

START NOW

(H01L) II.1(1)<br />

(51) H01L 21/762 (11) 2 073 260 B1<br />

H01L 21/3105<br />

(25) Fr (26) Fr<br />

(21) 08171616.9 (22) 15.12.2008<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MT NL<br />

NO PL PT RO SE SI SK TR<br />

(43) 24.06.2009<br />

(30) 17.12.2007 FR 0759893<br />

(54) Übertragungsverfahren einer Dünnschicht<br />

Thin film transfer method<br />

Procédé de transfer d'une couche mince<br />

(73) Commissariat à l'Énergie Atomique et aux<br />

Énergies Alternatives, Bâtiment "Le Ponant<br />

D" 25, rue Leblanc, 75015 Paris, FR<br />

(72) Di Cioccio, Léa, 38330, Saint Ismier, FR<br />

(74) Ilgart, Jean-Christophe, et al, BREVALEX 95<br />

rue d'Amsterdam, 75378 Paris Cedex 8, FR<br />

(51) H01L 21/762 (11) 2 164 096 B1<br />

(25) En (26) En<br />

(21) 09178890.1 (22) 16.07.2003<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IT LI LU MC NL PT RO SE SI SK<br />

TR<br />

(43) 17.03.2010<br />

(30) 17.07.2002 FR 0209022<br />

09.04.2003 US 461524 P<br />

(54) Verfahren zur Glättung der Kontur einer<br />

nützlichen, auf ein Trägersubstrat übertragenen<br />

Materialschicht<br />

Method of smoothing the outline of a<br />

useful layer of material transferred onto a<br />

support substrate<br />

Procédé de lissage de la silhouette d'une<br />

couche de matériau utile transférée sur un<br />

substrat support<br />

(73) Soitec, Parc Technologique des Fontaines<br />

Chemin des Franques, 38190 Bernin, FR<br />

(72) Ghyselen, Bruno, 38170, Seyssinet-Pariset,<br />

FR<br />

(74) Bomer, Françoise Marie, et al, Cabinet<br />

Regimbeau Espace Performance Bâtiment K,<br />

35769 Saint-Grégoire-Cedex, FR<br />

(62) 03763889.7 / 1 523 773<br />

(51) H01L 21/762 (11) 2 342 744 B1<br />

(25) Fr (26) Fr<br />

(21) 09760241.1 (22) 29.10.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(43) 13.07.2011<br />

(86) FR 2009/052096 29.10.2009<br />

(87) WO 2010/049657 2010/18 06.05.2010<br />

(30) 31.10.2008 FR 0806071<br />

(54) VERFAHREN ZUR HERSTELLUNG EINER<br />

EINKRISTALLSCHICHT IN DER MIKRO-<br />

ELEKTRONIK<br />

PROCESS FOR FORMING A SINGLE-<br />

CRYSTAL FILM IN THE MICROELEC-<br />

TRONICS FIELD<br />

PROCEDE DE FORMATION D'UNE<br />

COUCHE MONOCRISTALLINE DANS LE<br />

DOMAINE MICRO-ELECTRONIQUE<br />

(73) Commissariat à l'Énergie Atomique et aux<br />

Énergies Alternatives, Bâtiment "Le Ponant<br />

D" 25, rue Leblanc, 75015 Paris, FR<br />

(72) FOURNEL, Franck, F-38190 Villard-Bonnot,<br />

FR<br />

SIGNAMARCHEIX, Thomas, F-38660 La<br />

Terrasse, FR<br />

CLAVELIER, Laurent, F-38000 Grenoble, FR<br />

DEGUET, Chrystel, F-38330 Saint Ismier, FR<br />

(74) Colombo, Michel, et al, Brevinnov 324, rue<br />

Garibaldi, 69007 Lyon, FR<br />

(51) H01L 21/768 (11) 1 385 201 B1<br />

(25) En (26) En<br />

(21) 03016761.3 (22) 23.07.2003<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(84) DE FI FR<br />

(43) 28.01.2004<br />

(30) 24.07.2002 KR 2002043477<br />

03.07.2003 KR 2003044852<br />

(54) Herstellung von Doppel-Damaszener Verbindungen<br />

eines mikroelektronischen<br />

Bauelementes<br />

Method of fabricating dual damascene<br />

interconnections of microelectronic device<br />

Méthode de formation des interconnexions<br />

en double-damasquinage d'un<br />

dispositif micro-électronique<br />

(73) Samsung Electronics Co., Ltd., 416, Maetandong,<br />

Paldal-gu, Suwon-City, Kyungki-do,<br />

KR<br />

(72) Lee, Kyoung-woo, Youngdeungpo-gu,<br />

Seoul, KR<br />

Lee, Soo-geun, Suwon-City, Kyungki-do, KR<br />

Park, Wan-jae, Suwon-City, Kyungki-do, KR<br />

Kim, Jae-hak, Songpa-gu, Seoul, KR<br />

(74) <strong>Patent</strong>anwälte Ruff, Wilhelm, Beier, Dauster<br />

& Partner, Kronenstrasse 30, 70174 Stuttgart,<br />

DE<br />

H01L 21/8247 → (51) H01L 27/12<br />

H01L 21/84 → (51) H01L 27/12<br />

(51) H01L 23/29 (11) 2 278 616 B1<br />

(25) De (26) De<br />

(21) 10006524.2 (22) 23.06.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

(43) 26.01.2011<br />

(30) 22.07.2009 DE 102009034138<br />

(54) Leistungshalbleitermodul mit einem<br />

Sandwich mit einem Leistungshalbleiterbauelement<br />

High-power semiconductor module with a<br />

sandwich with a high-power semiconductor<br />

component<br />

Module semi-conducteur de puissance<br />

doté d'un sandwich équipé d'un composant<br />

semi-conducteur de puissance<br />

(73) SEMIKRON Elektronik GmbH & Co. KG, <strong>Patent</strong>abteilung<br />

Sigmundstrasse 200, 90431<br />

Nürnberg, DE<br />

(72) Göbl, Christian, 90441 Nürnberg, DE<br />

Stockmeier, Thomas, Dr., 91054 Erlangen,<br />

DE<br />

(51) H01L 23/31 (11) 2 076 922 B1<br />

H01L 23/485 H01L 23/532<br />

H01L 23/525<br />

(25) En (26) En<br />

(21) 08765221.0 (22) 30.05.2008<br />

(84) DE FR GB<br />

(43) 08.07.2009<br />

(86) JP 2008/060408 30.05.2008<br />

(87) WO 2009/037902 2009/13 26.03.2009<br />

(30) 21.09.2007 JP 2007244977<br />

28.02.2008 JP 2008047090<br />

(54) HALBLEITERELEMENT MIT EINEM FILM<br />

MIT NIEDRIGER DIELEKTRISCHER ISO-<br />

LATION UND VERFAHREN ZU SEINER<br />

HERSTELLUNG<br />

SEMICONDUCTOR DEVICE HAVING LOW<br />

DIELECTRIC INSULATING FILM AND<br />

MANUFACTURING METHOD OF THE<br />

SAME<br />

DISPOSITIF SEMI-CONDUCTEUR AYANT<br />

UN FILM ISOLANT À FAIBLE CONSTANTE<br />

DIÉLECTRIQUE ET SON PROCÉDÉ DE<br />

FABRICATION<br />

(73) Teramikros, Inc., 10-6, Imai 3-chome, omeshi,<br />

Tokyo 198-8555, JP<br />

(72) MIZUSAWA, Aido, Hamura-shi, Tokyo 205-<br />

8555, JP<br />

OKADA, Osamu, Hamura-shi, Tokyo 205-<br />

8555, JP<br />

699<br />

<strong>Patent</strong>e<br />

<strong>Patent</strong>s<br />

Brevets (<strong>36</strong>/<strong>2012</strong>) 05.09.<strong>2012</strong><br />

WAKABAYASHI, Takeshi, Hamura-shi, Tokyo<br />

205-8555, JP<br />

MIHARA, Ichiro, Hamura-shi, Tokyo 205-<br />

8555, JP<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser,<br />

Leopoldstrasse 4, 80802 München,<br />

DE<br />

(51) H01L 23/48 (11) 1 296 374 B1<br />

B81B 7/00 H01L 21/18<br />

(25) It (26) En<br />

(21) 01830590.4 (22) 14.09.2001<br />

(84) DE FR GB IT<br />

(43) 26.03.2003<br />

(54) Verfahren, um in mehreren unterschiedlichen<br />

Substraten integrierte Mikrosysteme<br />

zu bonden und elektrisch zu verbinden<br />

Process for bonding and electrically<br />

connecting microsystems integrated in<br />

several distinct substrates<br />

Procédé pour assembler et connecter<br />

électriquement des microsystèmes integrés<br />

dans plusieurs substrats differents<br />

(73) STMicroelectronics Srl, Via Olivetti 2, 20864<br />

Agrate Brianza, IT<br />

Hewlett-Packard Company, 3000 Hanover<br />

Street, Palo Alto, CA 94304, US<br />

(72) Mastromatteo, Ubaldo, 20010 Bareggio, IT<br />

Bombonati, Mauro, 20081 Abbiategrasso, IT<br />

Morin, Daniela, 20010 Inveruno, IT<br />

Mottura, Marta, 20077 Melegnano, IT<br />

Marchi, Mauro, 53040 Bettolle, IT<br />

(74) Cerbaro, Elena, et al, Studio Torta S.p.A. Via<br />

Viotti, 9, 10121 Torino, IT<br />

H01L 23/485 → (51) H01L 23/31<br />

H01L 23/522 → (51) H01L 23/64<br />

H01L 23/525 → (51) H01L 23/31<br />

H01L 23/532 → (51) H01L 23/31<br />

H01L 23/538 → (51) H05K 1/02<br />

(51) H01L 23/544 (11) 2 387 798 B1<br />

H01L 23/58 H04L 9/32<br />

(25) De (26) De<br />

(21) 09774845.3 (22) 15.12.2009<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(43) 23.11.2011<br />

(86) EP 2009/008956 15.12.2009<br />

(87) WO 2010/081517 2010/29 22.07.2010<br />

(30) 14.01.2009 DE 102009005255<br />

(54) VERFAHREN ZUR VERIFIKATION EINER<br />

KENNZEICHNUNGSSCHALTUNG<br />

METHOD FOR VERIFYING AN IDENTIFI-<br />

CATION CIRCUIT<br />

PROCÉDÉ DE VÉRIFICATION D'UN<br />

CIRCUIT D'IDENTIFICATION<br />

(73) KHS GmbH, Juchostrasse 20, 44143 Dortmund,<br />

DE<br />

(72) KEIL, Gernot, 55595 Braunweiler, DE<br />

H01L 23/58 → (51) H01L 23/544<br />

(51) H01L 23/64 (11) 1 496 528 B1<br />

H01Q 9/04 H01Q 9/06<br />

H01P 7/08 H01L 23/522<br />

(25) En (26) En<br />

(21) 04015456.9 (22) 01.07.2004<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IT LI LU MC NL PL PT RO SE SI<br />

SK TR<br />

(43) 12.01.2005<br />

(30) 03.07.2003 JP 2003191267<br />

(54) Differentieller Schwingkreis<br />

Differential oscillation circuit

logo

products

Resources

Company

Terms of service
Privacy policy
Cookie policy
Cookie settings
Imprint
Change language
Made with love in Switzerland
© 2024 Yumpu.com all rights reserved

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!