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GENERAL INFORMATIONThe SGS-THOMSON Microelectronics Memoriesdata book is a comprehensive collection of informationon advanced, high density, high speed memoryproducts for specific applications.SGS-THOMSON offers 4 groups of memory products:EPROMs and OTP's, EEPROMs, ROMs andStatic RAMs.EPROMs (Electrically Programmable Read OnlyMemory) and OTP's (One Time ProgrammableRead Only Memory) are non volatile memory componentsfor program storage.SGS-THOMSON Microelectronics has one of thelargest product range to meet your requirements:- all densities from 16K to 1 Megabit.- NMOS or CMOS technology.- Jedec approved footprints for easy upgrades.- UV EPROM in Cerdip package.- One Time Programmable in windowless plasticpackage ideally suited for high volume productionenvironment and surface mounting applications.- very fast programming algorithm.EEPROMS (Electrically Erasable ProgrammableRead Only Memories) embody the fOil range ofEPROM functional advantages plus the added featuresof in-circuit erasability and programmability.SGS-THOMSON range comprehends serial accesspr~ucts, with densities ranging from 256 bit to 2Kbit, including 2-wire bus compatible versions.Static RAM products cover high speed memories,biport devices and Zeropower TimekeeperTMRAMS.• High speed memories with a device density rangeof 4Kbits to 64Kbits and performance from20ns to 55ns.Organizational flexibility (4K x 1, 16K x 1, 4K x 4,64K x 1, 8K x 8) covers a vast range of applications,including large mainframes, high speedcontrollers, communications, graphics displayand workstations.• Biport devices consist of a family of FIFO (FirstIn-First-Out) buffers. These FIFO's provide an interfacebetween digital information paths with widelyvarying speeds. Each information sourcecan thus operate at its own intrinsic speed, whileresults are processed or distributed at speedsfrom 25ns to ~OOns. The Biport family also includesa range of veritable Dual Port Rams enablingapplications in systems with two or moreprocessors, or with distributed processors, whereseparate computing units must exchange dataat speeds approaching real time.• The Zeropower and Timekeeper RAM familycombines the operating simplicity of conventionbyte-wide SRAM's with the excellent data integrityof Zeropower technology. This integrity isachieved thanks to the use of advanced CMOStechnology and long-life lithium cells. With densitiesfrom 2K x 8 to 8K x 8 and access/cycle timesup to 120ns (150ns for 8K x 8), SGSTHOMSON Zeropower RAMs cover the full rangeof non-volatile needs for all microprocessorbased systems. Thanks to the combined featuresof Zeropower technology with an on-chip realtime clock, the 48T02 Timekeeper offers unparallelednon-volatile performance.9
SELECTION GUIDE ..NMOS UV EPROMPart NumberOrga.Access ICC MAX Temp. PinTimeVecAct St.by Range CountET2716Q 2Kx8 450n5 100mA 25mA 5V ± 5% o to +70°C 24ET2716Q-1 2Kx8 350n5 100mA 25mA 5V ± 10% o to + 70°C 24M2716F1 2Kx8 450n5 100mA 25mA 5V ± 5% o to +70°C 24M2716-1F1 2Kx8 350n5 100mA 25mA 5V ± 10% o to +70°C 24M2716F6 2Kx8 450n5 100mA 25mA 5V ± 5% -40 to +85°C 24M2716-1F6 2Kx8 350n5 100mA 25mA 5V ±10% -40 to +85°C 24M2732AF1 4Kx8 250115 125mA 35mA 5V ± 5% o to + 70°C 24M2732A-2F1 4Kx8 200n5 125mA 35mA 5V ± 5% o to + 70°C 24M2732A"3F1 4Kx8 300n5 125mA 35mA 5V ± 5% o to +70°C 24M2732A-4F1 4Kx8 450n5 125mA 35mA .5V ±. 5% o tp + 70°C 24M2732AF6 4Kx8 250n5 125mA :35mA 5V ± 5% -40 to +85°C 24M2732A-4F6 4Kx8 450n5 125mA 35mA 5V ± 5% -40 to +85°C 24M2764AF1 : 8Kx8 250n5 75mA 35mA 5V ± 5% o to +70 0 C 28M2764A-1F1 8Kx8 180n5 75mA 35mA 5V ± 5% o to + 70°C 28M2764A-2F1 8Kx8 200n5 75mA 35mA 5V ± 5% o to +70 0 C 28M2764A-3F1 8Kx8 300n8 75mA 35mA 5V ± 5% o to +70°C 28 ;M2764A"4F1 8Kx8 450n5 75mA 35mA 5V ± 5% o to + 70°C 28M2764A-18F1 8Kx8 180n5 .• 75mA 35mA 5V ± 10% o to +70°C 28M2764A-20F1 8Kx8 200n5 75mA 35mA 5V ± 100/0 o to + 70°C 28M2764A-25F1 8Kx8 250n5 75mA 35mA 5V ± 10% o to +70 0 C 28M2764A-30F1 8Kx8 300n5 75mA 35mA 5V ± 10% o to +70 0 C 28M2764A-45F1 8Kx8 450n5 75mA 35mA 5V ± 10% o to + 70°C 28M2764AF6 8Kx8 250n5 75mA 35mA 5V ± 5% -40 to +85°0 28M2764A-4F6 8Kx8 450n8 75mA 35mA 5V ± 5% -40 to +85°C 28M27128AF1 16Kx8 250n5 85mA 40mA 5V± 5% o to +70°C 28M27128A-1 F1 16Kx8 150n5 85mA 40mA 5V± 5% o to +70°C 28M27128A-2F1 16Kx8 200n5 85mA 40mA 5V ± 5% o to + 70°C 28M27128A-3F1 16Kx8 300n5 85mA 40mA 5V ± 5% o to +70°C 28M27128A-4F1 16Kx8 450n5 85mA 40mA 5V ± 5% o to + 70°C 28M27128A-20F1 16Kx8 200n5 85mA 40mA 5V ± 10% Oto +70°C 28M27128A-25F1 16Kx8 250n5 85mA 40mA 5V ± 10% o to + 70°C 28M27128A-30F1 16KxB 300n5 85mA 40mA 5V ± 10% o to + 70°C 28M27128A-45F1 16Kx8 450n5 85mA 40mA 5V ± 10% o to + 70°C 28M27128AF6 16Kx8 250n5 85mA 40mA 5V ± 5% -40 to +85°C 28M27128A-4F6 16Kx8 450n5 85mA 40mA 5V ± 5% -40 to +85°C 28M27256F1 32Kx8 250n5 100mA 40mA 5V ± 5% o to +70 0 C 28M27256-1F1 32Kx8 170n5 100mA 40mA 5V ± 5% o to + 70°C 28M27256-2F1 32Kx8 200n5 100mA 40mA 5V ± 5% o to +70°C 28M27256-3F1 32Kx8 300n5 100mA 40mA 5V ± 5% o to +70°C 28M27256-4F1 32Kx8 450n5 100mA 40mA 5V ± 5% o to + 70°C 28M27256-20F1 32Kx8 200n5 100mA 40mA 5V ± 10% o to +70 0 C 28M27256-25F1 32Kx8 250n5 100mA 40mA 5V ± 10% o to +70 0 C 28M27256-30F1 32Kx8 300n5 100mA 40mA 5V ± 10% o to +70 0 C 28M27256-45F1 32Kx8 450n5 100mA 40mA 5V ± 10% o to + 70°C 28M27256F6 32Kx8 250n5 100mA 40mA 5V ± 5% -40 to +85°C 28M27256-4F6 32Kx8 450n5 100mA 40mA 5V ± 5% -40 to +85°C 28M27512F1 64Kx8 250n5 125niA 40mA 5V ± 5% o to + 70°C 28M27512-2F1 64Kx8 200n5 125m'A 40mA 5V ± 5% o to + 70°C 28M27512-3F1 64Kx8 300n5 125mA 40mA 5V ± 5% o to +70 0 C 28M27512-25F1 64Kx8 250n5 125mA 40mA 5V ± 10% o to + 70°C 28M27512-30F1 64Kx8 300n5 125mA 40mA 5V ± 10% o to + 70°C 28M27512F6 64Kx8 250n5 125mA 40mA 5V ± 5% -40 to +85°C 2810
Page 2 and 3: MEMORY PRODUCTSDATABOOK1st EDITIONJ
Page 4: TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8: GENERAL INDEXPageROM DEVICES ......
Page 12 and 13: SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15: SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17: SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19: SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21: 12 32Kx8 NMOS M27256FUV EPROMPRODUC
Page 22 and 23: VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
Page 24: EPROM DEVICESNMOS UV EPROM23
Page 27 and 28: ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30: ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32: ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34: ET2716/M2716SWITCHING TIME WAVEFORM
Page 36 and 37: M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39: M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41: M2732APROGRAMMING OPERATION(l) (T a
Page 42: M2732APROGRAMMING OPERATION (Contin
Page 45 and 46: M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
Page 47 and 48: M2764AREAD OPERATION (Continued)AC
Page 49 and 50: M2764ADEVICE OPERATION (Continued)T
Page 51 and 52: M2764APROGRAMMING WAVEFORMSV1HADDRE
Page 53 and 54: M2764AORDERING INFORMATIONPart Numb
Page 55 and 56: M27128ABLOCK DIAGRAMVceO--GND o--
Page 57 and 58: M27128AREAD OPERATION (Continued)AC
Page 59 and 60:
M27128ADEVICE OPERATION (Continued)
Page 61 and 62:
M27128APROGRAMMING WAVEFORMSIVIHADD
Page 63 and 64:
M27128AORDI:RING INFORMATIONPart Nu
Page 65 and 66:
M27256BLOCK DIAGRAMVeco----GNOo-
Page 67 and 68:
M27256READ OPERATION (Continued)AC
Page 69 and 70:
M27256DEVICE OPERATION (Continued)P
Page 71 and 72:
M27256PROGRAMMING WAVEFORMSPROGRAMP
Page 73 and 74:
M27256ORDERING INFORMATIONPart Numb
Page 75 and 76:
M27512BLOCK DIAGRAMVee o-----?GNOO-
Page 77 and 78:
M27512AC TEST CONDITIONSOutput Load
Page 79 and 80:
M27512DEVICE OPERATIONS (Continued)
Page 81 and 82:
M27512DEVICE OPERATION (Continued)M
Page 83 and 84:
M27512PROGRAMMING OPERATION (T amb=
Page 85 and 86:
M27512M27512 DESIGN INNOVATIONS FOR
Page 87 and 88:
M27512Figure 7 - M27512 Sensing sch
Page 90:
EPROM DEVICESCMOS UV EPROM89
Page 93 and 94:
ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
Page 95 and 96:
ETC2716AC TEST CONDITIONSOutput Loa
Page 97 and 98:
ETC2716ERASING~he ETC?716 !s erased
Page 99 and 100:
ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103:
ETC273232K BIT (4K x 8) CMOS UV ERA
Page 104 and 105:
ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107:
ETC2732DEVICE OPERATIONThe five mod
Page 108 and 109:
ETC2732PROGRAMMING WAVEFOR'''SNote:
Page 110 and 111:
ETC2732SWITCHING TIME WAVEFORMSRead
Page 112 and 113:
TS27C64AQ64K (8K x 8) CMOS UV ERASA
Page 114 and 115:
TS27C64AQREAD OPERATIONDC CHARACTER
Page 116 and 117:
TS27C64AQDEVICE OPERATIONThe seven
Page 118 and 119:
TS27C64AQAC TEST CONDITIONSInput ri
Page 120:
TS27C64AQORDERING INFORMATIONPart N
Page 123 and 124:
TS27C256QBLOCK DIAGRAMVee 0----.GND
Page 125 and 126:
TS27C256QAC TEST CONDITIONSOutput L
Page 127 and 128:
TS27C256QERASINGThe TS27C256 is era
Page 129 and 130:
TS27C256QHIGH SPEED PROGRAMMING FLO
Page 131 and 132:
,1,;'"
Page 133 and 134:
ST27C1001BLOCK DIAGRAMv P P cr-----
Page 135 and 136:
M27C1024BLOCK DIAGRAMVpp 0----:---+
Page 137 and 138:
M27C1024AC TEST CONDITIONSOutput Lo
Page 139 and 140:
M27C,1024PROGRAM INHIBITProgramming
Page 141 and 142:
M27C1024PROGRAMMING WAVEFORMSVIHADD
Page 143 and 144:
M27C1024ORDERING INFORMATIONPart Nu
Page 146 and 147:
ST2764AP64K (8K x 8) NMOS ONE TIME
Page 148 and 149:
ST2764APREAD OPERA nONDC AND AC CON
Page 150 and 151:
ST2764APDEVICE OPERATIONThe seven m
Page 152 and 153:
ST2764APPROGRAMMING OPERATION (Tamb
Page 154 and 155:
ST2764APFAST PROGRAMMING FLOWCHART9
Page 156 and 157:
ST27128AP128K (16K x 8) NMOS ONE TI
Page 158 and 159:
ST27128APREAD OPERATIONDC AND AC CO
Page 160 and 161:
ST27128APDEVICE OPERATIONThe seven
Page 162 and 163:
ST27128APPROGRAMMING OPERATION (Tam
Page 164 and 165:
ST27128APFAST PROGRAMMING FLOWCHART
Page 166 and 167:
ST27256P256K (32K x 8) NMOS ONE TIM
Page 168 and 169:
ST27256PREAD OPERATIONDC AND AC CON
Page 170 and 171:
ST27256PDEVICE OPERATIONThe eight m
Page 172 and 173:
ST27256PPROGRAMMING OPERATION (Tamb
Page 174 and 175:
ST27256PFAST PROGRAMMING FLOWCHARTF
Page 176:
EPROM DEVICESCMOS OTP ROM175
Page 179 and 180:
TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
Page 181 and 182:
TS27C64AFN-TS27C64APAC TEST CONDITI
Page 183 and 184:
TS27C64FN-TS27C64APPROGRAMMINGOPERA
Page 185 and 186:
TS27C64AFN-TS27C64APHIGH SPEED PROG
Page 187 and 188:
TS27C64AFN~TS27C64APORDERING INFORM
Page 189 and 190:
ST27C256FN-ST27C256PBLOCK DIAGRAMVc
Page 191 and 192:
ST27C256FN·ST27C256PAC TEST CONDIT
Page 193 and 194:
ST27C256FN-ST27C256PPROGRAMMING CHA
Page 195 and 196:
ST27C256FN·ST27C256PHIGH SPEED PRO
Page 197 and 198:
ST27C256FN-ST27C256PORDERING INFORM
Page 200 and 201:
SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
Page 202 and 203:
M8571ELECTRICAL CHARACTERISTICS (0
Page 204 and 205:
M8571S-BUS DESCRIPTION (Continued)A
Page 206 and 207:
M8571S·BUS INTERFACEThe serial, 3-
Page 208 and 209:
M8571MASTER. READS AFTER SETTING WO
Page 210:
M8571ORDERING INFORMATIONPort Numbe
Page 213 and 214:
M9306BLOCK DIAGRAM00DI---+-+-+-+---
Page 215 and 216:
M93D6FUNCTIONAL DESCRIPTIONThe inpu
Page 217 and 218:
M9306ORDERING INFORMATIONPart Numbe
Page 219 and 220:
M9346BLOCK DIAGRAMDl~-r------------
Page 221 and 222:
M9346FUNCTIONAL DESCRIPTIONThe inpu
Page 223 and 224:
M9346INSTRUCTION SETInstruction S8
Page 225 and 226:
M9346TIMING DIAGRAMS (Continued)INS
Page 228:
EEPROM DEVICESCMOS EEPROM227
Page 231 and 232:
ST24C02BLOCK DIAGRAMseL--~~--~-----
Page 233 and 234:
ST24C02FIG. 2A· DATA TRANSFER SEQU
Page 235 and 236:
ST24C02ELECTRICAL CHARACTERISTICSAC
Page 237 and 238:
ST24C02FIG. 4A· PAGE WRITEBUS ACTI
Page 240 and 241:
TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243:
TS59C11READ OPERATIONDC CHARACTERIS
Page 244 and 245:
TS59C11The READ instruction is the
Page 246 and 247:
TS59C11FIG. 5b - ERAL (Erase all) M
Page 248 and 249:
~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
Page 250 and 251:
TS93C46READ OPERATIONDC CHARACTERIS
Page 252 and 253:
TS93C46INSTRUCTION TIMINGSREADSK ~u
Page 254:
~TS93C46ORDERING INFORMATIONPart Nu
Page 257 and 258:
ST93C56BLOCK DIAGRAMPROTECTREGISTER
Page 260 and 261:
M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263:
M2316HSTATIC ELECTRICAL CHARACTERIS
Page 264 and 265:
M2332M233332K-BIT READ ONLY MEMORY
Page 266 and 267:
M2332/M2333DC AND OPERATING CHARACT
Page 268 and 269:
~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
Page 270 and 271:
M2364DC AND OPERATING CHARACTERISTI
Page 272 and 273:
M236564K-BIT READ ONLY MEMORY• PI
Page 274 and 275:
M2365DC AND OPERATING CHARACTERISTI
Page 276:
STATIC RAM DEVICES275
Page 279 and 280:
MK48Z02N2(B)-12115/20/25DESCRIPTION
Page 281 and 282:
MK48Z02112(B)-12115/20/25WRITE MODE
Page 283 and 284:
MK48Z02/12(B)-12/15/20/25FIGURE 6.
Page 285 and 286:
MK48Z02/12(B)-12/15/20/25FIGURE 7.
Page 287 and 288:
MK48Z02112(B}-12115/20/25AC TEST CO
Page 290 and 291:
MK48C02A/12A(K, N)·15/20/252K x 8
Page 292 and 293:
MK48C02AI12A(K,N)-15/20/25OPERATION
Page 294 and 295:
MK48C02A/12A(K, N)-15/20/25DATA RET
Page 296 and 297:
MK48C02A112A(K,N)-15/20/25FIGURE 6.
Page 298 and 299:
MK48C02A112A(K,N)-15/20/25AC TEST C
Page 300 and 301:
MK48T02/12(B)-12/15120/252K x 8 ZER
Page 302 and 303:
MK48T02/12(B)-12/15/20/25OPERATIONR
Page 304 and 305:
MK48T02N 2(8)-12/15/20/25CLOCK OPER
Page 306 and 307:
MK48T02112(B)-12/15/20/25The FT bit
Page 308 and 309:
MK48T02112(B)-12115/20/25PREDICTING
Page 310 and 311:
MK48T02112(B)-12/15/20/25~redlctlng
Page 312 and 313:
MK48TD2/12(B)-12115/20/25ABSOWTE MA
Page 314 and 315:
M K48Z08/18/09/19(B)·15/201258K x
Page 316 and 317:
MK48Z08/18/09/19(B)-15/20/25OPERATI
Page 319 and 320:
MK48Z08118/09/19(B)-15/20/25AC ELEC
Page 321 and 322:
MK48Z08118/09119(B)-15/20/25DATA RE
Page 323 and 324:
MK48Z08118/09119(B)-15/20/25ABSOWTE
Page 325 and 326:
MK48Z08/18/09/19(B)-15/20/25PACKAGE
Page 327 and 328:
MKI48Z02112(B)-15/20/25DESCRIPTIONT
Page 329 and 330:
M KI48Z02112(B)-15/20J25WRITE MODET
Page 331 and 332:
MKI48Z02/12(B.)-15/20/25FIGURE.6. P
Page 333 and 334:
MKI48Z02/12(B)-15/20/25FIGURE 7. MK
Page 335 and 336:
MKI48Z02112(B)-1S/20/2SAC TEST COND
Page 338 and 339:
~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341:
MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343:
MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345:
MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347:
MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349:
MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350:
MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354:
STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358:
MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360:
MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362:
MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364:
MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366:
MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368:
MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370:
MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372:
MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374:
MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376:
MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378:
MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380:
MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382:
MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384:
MK4202(Q)-20AC TEST CONDITIONSInput
Page 385 and 386:
MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 387 and 388:
MK48H74(N,P,E)-35/45/55WRITE MODETh
Page 389 and 390:
MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392:
MK48H74(N,P,E)-35/45/55APPLICATIONT
Page 393 and 394:
MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396:
STATIC RAM DEVICESFIFO395
Page 399 and 400:
MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402:
MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404:
MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406:
M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408:
MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410:
MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412:
MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415:
~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425:
MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427:
MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429:
MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431:
MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433:
MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435:
MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466:
MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485:
MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
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MK41H79(N,P)-20/25/35~ORMALIZED DC
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MK41 H87(N)-25/35/4564K x 1 CMOS ST
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MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513:
MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
Page 516 and 517:
.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
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MK48H64/MK48H65(N,P)-35/45/55noWRIT
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MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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