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MK48Z02112(B)-12/15/20/25DATA RETENTION TIMEAbout Figure 7Figure 7 illustrates how expected MK48Z02/12 batterylife is influenced by temperature. The life of thebattery is controlled by temperature and is virtuallyindependent of the percentage of time theMK48Z02/12 spends in battery back-up mode.Battery life predictions presented in Figure 7 areextrapolated from temperature accelerated life-testdata collected in over 100 million device hou~s ofcontinuing bare cell and encapsulated cell batterytesting by SGS:rHOMSON. Obviously, temperatureaccelerated testing cannot identify non-temperaturedependent failure mechanisms. However, in viewof the fact that no random cell failures have beenrecorded in any of SGS-THOMSON's ongoing batterytesting since it began in 1982, we believe thelikelihood of such failure mechanisms surfacing isextremely poor. For the purpose of this testing, acell failure is defined as the inability of a cell stabilizedat 25"C to produce a 2.0 volt closed-circuit voltageacross a 250K ohm load resistance.A Special Note: The summary presented inFigure 7 represents a conservative analysis ofthe data presently available. While SGSTHOMSON is most likely in possession of thelargest collection of battery life data of this kindin the world, the results presented should notbe considered absolute or final; they can be expectedto change as yet more data becomesavailable. We believe that future read-points oflife tests presently under way and improvementsin the battery technology itself will result in a continuingimprovement of these figures.Two end of life curves are presented in Figure 7.They are labeled ''Average (tsOOAl)" and "(t,OAl)".These terms relate to the probability that a givennumber of failures will have accumulated by a particularpOint in time. If, for example, expected lifeat 70 °C is at issue, Figure 7 indicates that a particularMK48Z02/12 has a 1% chance of having a batteryfailure 11 years into its life and a 50% chanceof failure at the 20 year mark. Conversely, given asample of devices, 1% of them can be expected toexperience battery failure within 11 years; 50% ofthem can be expected to fail within 20 years.The t,% figure represents the practical onset ofwear-out, and is therefore suitable for use in whatwould normally be though of as a worst-case analysis.The t5O% figure represents "normal" or "average"life. It is, therefore, accurate to say that theaverage device will last "tSO%".Battery life is defined as beginning on the date ofmanufacture. Each MK48Z02/12 is marked with afour digit manufacturing date code in the formYYWW (Example: 8502 = 1985, week 2).Calculating Predicted Battery LifeAs Figure 7 indicates, the predicted life of the batteryin the MK48Z02l12 is a function of temperature.The back-up current required by the memory matrixin the MK48Z02/12 is so low that it has negligibleinfluence on battery life.Because predicted battery life is dependent upon applicationcontrolled variables, only the user can estimatepredicted battery life in a given design. As longas ambient temperature is held reasonably constant,expected life can be read directly from Figure 7. ifthe MK48Z02/12 spends an appreciable amount oftime at a variety of temperatures, the following equationsshould be used to estimate battery life.Predicted Battery life = _________-'-1_________[(TA,ITT)/BL,))+[(TA21TT)/BL2)+··· +[(TAnITT}/BLn))Where TA" TA2, TAn = Time at Ambient Temperature 1, 2, etc.TT = Total Time = TA, + TA2 + ... + TAnBL" BL2, BLn = Predicted Battery lifetime at Temp 1, Temp 2, etc. (see Figure 7).EXAMPLE PREDICTED BATTERY LIFE CALCULATIONA cash registerlterminal operates in an environmentwhere the MK48Z02/12 is exposed to temperaturesof 30°C (86°F) or less for 3066 hrslyr; temperaturesgreater than 25°C, but less than 40 °C (104 OF), for5256 hrs/yr; and temperatures greater than 40 o e,but less than 70 0 e (158°F), for the remaining 438hrslyr.Reading predicted typical life values from Figure 7; BL, = 456 yrs., BL2 = 175 yrs., BL3 = 11.4 yrs.Total Time (TT) = 8760 hrs.lyr. TA, = 3066 hrs.lyr. TA2 =5256 hrs.lyr. TA3 = 438 hrs.lyr.Predicted Typical Battery life ;:: 1[(3066/8769)/456)+[(5256/8760)/175)+[(438/8760)/11.4);:: 116.5 yrs.7111283
MK48Z02/12(B)-12/15/20/25FIGURE 7. MK48Z02/12 PREDICTED BATTERY STORAGE LIFE VS TEMPERATURE300200(J)10090807060504030a:w 20> '"10987620I30 40 50 60 70 8090DEGREES CELSIUS8111284
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
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TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
Page 12 and 13:
SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21:
12 32Kx8 NMOS M27256FUV EPROMPRODUC
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VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
Page 27 and 28:
ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
Page 36 and 37:
M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
Page 42:
M2732APROGRAMMING OPERATION (Contin
Page 45 and 46:
M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
Page 47 and 48:
M2764AREAD OPERATION (Continued)AC
Page 49 and 50:
M2764ADEVICE OPERATION (Continued)T
Page 51 and 52:
M2764APROGRAMMING WAVEFORMSV1HADDRE
Page 53 and 54:
M2764AORDERING INFORMATIONPart Numb
Page 55 and 56:
M27128ABLOCK DIAGRAMVceO--GND o--
Page 57 and 58:
M27128AREAD OPERATION (Continued)AC
Page 59 and 60:
M27128ADEVICE OPERATION (Continued)
Page 61 and 62:
M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
Page 65 and 66:
M27256BLOCK DIAGRAMVeco----GNOo-
Page 67 and 68:
M27256READ OPERATION (Continued)AC
Page 69 and 70:
M27256DEVICE OPERATION (Continued)P
Page 71 and 72:
M27256PROGRAMMING WAVEFORMSPROGRAMP
Page 73 and 74:
M27256ORDERING INFORMATIONPart Numb
Page 75 and 76:
M27512BLOCK DIAGRAMVee o-----?GNOO-
Page 77 and 78:
M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
Page 81 and 82:
M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
Page 95 and 96:
ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
Page 99 and 100:
ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103:
ETC273232K BIT (4K x 8) CMOS UV ERA
Page 104 and 105:
ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107:
ETC2732DEVICE OPERATIONThe five mod
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ETC2732PROGRAMMING WAVEFOR'''SNote:
Page 110 and 111:
ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
Page 116 and 117:
TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
Page 120:
TS27C64AQORDERING INFORMATIONPart N
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TS27C256QBLOCK DIAGRAMVee 0----.GND
Page 125 and 126:
TS27C256QAC TEST CONDITIONSOutput L
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TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
Page 141 and 142:
M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
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ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
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ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
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ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
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ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
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TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
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ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
Page 225 and 226:
M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
Page 233 and 234: ST24C02FIG. 2A· DATA TRANSFER SEQU
Page 235 and 236: ST24C02ELECTRICAL CHARACTERISTICSAC
Page 237 and 238: ST24C02FIG. 4A· PAGE WRITEBUS ACTI
Page 240 and 241: TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243: TS59C11READ OPERATIONDC CHARACTERIS
Page 244 and 245: TS59C11The READ instruction is the
Page 246 and 247: TS59C11FIG. 5b - ERAL (Erase all) M
Page 248 and 249: ~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
Page 250 and 251: TS93C46READ OPERATIONDC CHARACTERIS
Page 252 and 253: TS93C46INSTRUCTION TIMINGSREADSK ~u
Page 254: ~TS93C46ORDERING INFORMATIONPart Nu
Page 257 and 258: ST93C56BLOCK DIAGRAMPROTECTREGISTER
Page 260 and 261: M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263: M2316HSTATIC ELECTRICAL CHARACTERIS
Page 264 and 265: M2332M233332K-BIT READ ONLY MEMORY
Page 266 and 267: M2332/M2333DC AND OPERATING CHARACT
Page 268 and 269: ~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
Page 270 and 271: M2364DC AND OPERATING CHARACTERISTI
Page 272 and 273: M236564K-BIT READ ONLY MEMORY• PI
Page 274 and 275: M2365DC AND OPERATING CHARACTERISTI
Page 276: STATIC RAM DEVICES275
Page 279 and 280: MK48Z02N2(B)-12115/20/25DESCRIPTION
Page 281 and 282: MK48Z02112(B)-12115/20/25WRITE MODE
Page 283: MK48Z02/12(B)-12/15/20/25FIGURE 6.
Page 287 and 288: MK48Z02112(B}-12115/20/25AC TEST CO
Page 290 and 291: MK48C02A/12A(K, N)·15/20/252K x 8
Page 292 and 293: MK48C02AI12A(K,N)-15/20/25OPERATION
Page 294 and 295: MK48C02A/12A(K, N)-15/20/25DATA RET
Page 296 and 297: MK48C02A112A(K,N)-15/20/25FIGURE 6.
Page 298 and 299: MK48C02A112A(K,N)-15/20/25AC TEST C
Page 300 and 301: MK48T02/12(B)-12/15120/252K x 8 ZER
Page 302 and 303: MK48T02/12(B)-12/15/20/25OPERATIONR
Page 304 and 305: MK48T02N 2(8)-12/15/20/25CLOCK OPER
Page 306 and 307: MK48T02112(B)-12/15/20/25The FT bit
Page 308 and 309: MK48T02112(B)-12115/20/25PREDICTING
Page 310 and 311: MK48T02112(B)-12/15/20/25~redlctlng
Page 312 and 313: MK48TD2/12(B)-12115/20/25ABSOWTE MA
Page 314 and 315: M K48Z08/18/09/19(B)·15/201258K x
Page 316 and 317: MK48Z08/18/09/19(B)-15/20/25OPERATI
Page 319 and 320: MK48Z08118/09/19(B)-15/20/25AC ELEC
Page 321 and 322: MK48Z08118/09119(B)-15/20/25DATA RE
Page 323 and 324: MK48Z08118/09119(B)-15/20/25ABSOWTE
Page 325 and 326: MK48Z08/18/09/19(B)-15/20/25PACKAGE
Page 327 and 328: MKI48Z02112(B)-15/20/25DESCRIPTIONT
Page 329 and 330: M KI48Z02112(B)-15/20J25WRITE MODET
Page 331 and 332: MKI48Z02/12(B.)-15/20/25FIGURE.6. P
Page 333 and 334: MKI48Z02/12(B)-15/20/25FIGURE 7. MK
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MKI48Z02112(B)-1S/20/2SAC TEST COND
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~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341:
MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343:
MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345:
MK48T08 (8)-10/12/15/20CLOCK OPERAT
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MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349:
MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350:
MK48T08 (8)-10/12/15/20PACKAGE DESC
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STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358:
MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360:
MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362:
MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364:
MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366:
MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368:
MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370:
MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372:
MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374:
MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376:
MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378:
MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380:
MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382:
MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384:
MK4202(Q)-20AC TEST CONDITIONSInput
Page 385 and 386:
MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 387 and 388:
MK48H74(N,P,E)-35/45/55WRITE MODETh
Page 389 and 390:
MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392:
MK48H74(N,P,E)-35/45/55APPLICATIONT
Page 393 and 394:
MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396:
STATIC RAM DEVICESFIFO395
Page 399 and 400:
MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402:
MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404:
MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406:
M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408:
MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410:
MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412:
MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415:
~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425:
MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427:
MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429:
MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431:
MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433:
MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435:
MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466:
MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485:
MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507:
MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509:
MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511:
MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513:
MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
Page 516 and 517:
.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
Page 520 and 521:
MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523:
MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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