memory products - Al Kossow's Bitsavers

TS93C46BLOCK DIAGRAMVccGNOORGDO01CSSKINSTRUCTION SETAddressDataInstruction Start bit Opcode128x8 64x16 128x8 64x16CommentsREAD 1 10 As-Ao As-Ao Read Address AwAOERASE 1 11 As-Ao As-Ao Erase Address AN-AOWRITE" 1 01 As-Ao As-Ao D7"DO D15"DO Write Address AwAoEWEN 1 00 llxxxxx llxxxx Program EnableEWDS 1 00 OOxxxxx OOxxxx Program DisableERAL 1 00 10xxxxx 10xxxx Erase All AddressesWRAL 1 00 01xxxxx 01xxxx D7"DO DIS-Do Program All Addresses• Write instruction is a self timed program instruction. The selected byte (word) gets erased before being written.01100: It is possible to connect the Data In andData Out pins together. However, with this configurationit si possible for a "bus conflict" to occurduring the "dummy zero" that precedes the readoperation, if Ao is a logic high level. Under sucha condition the voltage level seen at Data Out isundefined and will depend upon the relative impedancesof Data Out and the signal source drivingAo. The higher the current sourcing capabilityof Ao, the higher the voltage at the Data Out pin.POWER-ON DATA PROTECTION CIRCUITRY:During power-up all modes of operation are inhibiteduntil Vee has reached a level of between 2.8and 3.5 volts. During power-down the source dataprotection circuitry acts to inhibit all modes whenVee has fallen below the voltage range of 2.8 to3.5 volts.ABSOLUTE MAXIMUM RATINGSSymbolParameterValueUnitVee Supply voltageVoltage on any input pinVoltage or any output pin+7GNO -0.3 to + 7Vee +0.3VVVGND -0.3TSTG Storage temperature range-65 to + 150 °eLead temperature (Soldering: 10 seconds) . +300 °e217248