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MK41 H68/MK41 H69(N, P)-20/25/35WRITE MODEThe MK41H6819 is in the Write Mode whenever theWE and CE/CS inputs are in the low state. CE/CSor WE must be high during address transitions. Addressesmust be held valid throughout a write cycle.The Write b~s with the concurrence of a lowon WE and CE lCS. Therefor~ referenced tothe latter occurring edge of CEfCS, or WE.FIGURE 3. WRITE-WRITE-WRITE-READ TIMINGIf the output is enabled (CEfC"S is low), then WEwill return the outputs to high impedance withintWEZ of its falling edge. Care must be taken to avoidbus contention in this type of operation. Data-Inmust remain valid tOH after the rising edge ofCE/C"S or WE.CE/CSWEf---twC_________.I---twC------.I---Iwc----I-oo__--I.c-----I'",I.H"'_1Icw __ 1I I000·OQ3-----+ .)f-----f- VALtD IN -,\-----f:-WRITE CYCLE TIMINGAC ELECTRICAL CHARACTERISTICS(O°CSTAS70°C) (Vee = 5.0 V ± 10 percent)MK41H6X-20 MK41H6X-25 MK41H6X-35SYM PARAMETER MIN MAX MIN MAX MIN MAX UNITStwe Write Cycle Time 20 25 35 nstAS Address Setup Time 00 0 nstAW Address Valid to End of Write 16 20 30 nstAH Address Hold after End of Write 00 0 nstew Chip EnablefSelect to End of Write 1822 32 nstWEW Write Enable to End of Write 16 20 30 nstos Data Setup Time 1214 15 nstOH Data Hold Time 00 0 nstWEL Write Enable to Low-Z 55 5 nsNOTES23110489
MK41 H68/MK41 H69(N,P)-20/25/35FIGURE 4. DATA RETENTION TIMINGLOW Vee DATA RETENTION TIMING (MK41H68)i4----DATA RETENTION MDDE----~Vee -------"\Vee (MIN)-cr------'ov-------------LOW Vee DATA RETENTION CHARACTERISTICS(0°C
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
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TABLE OF CONTENTSGENERAL INDEX Page
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GENERAL INDEXPageROM DEVICES ......
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GENERAL INFORMATIONThe SGS-THOMSON
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SELECTION GUIDECMOS UV EPROMPart Nu
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SELECTION GUIDECMOS OTP ROMPart Num
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SELECTION GUIDEZEROPOWERPart Number
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SELECTION GUIDEFAST STATIC RAMPart
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12 32Kx8 NMOS M27256FUV EPROMPRODUC
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VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
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ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
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ET2716/M2716AC TEST CONDITIONSOutpu
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ET2716/M2716ERASINGThe M/ET2716 is
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ET2716/M2716SWITCHING TIME WAVEFORM
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M2732A32K (4K x 8) NMOS UV ERASABLE
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M2732AREAD OPERATIONDC AND AC CONDI
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M2732APROGRAMMING OPERATION(l) (T a
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M2732APROGRAMMING OPERATION (Contin
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M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
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M2764AREAD OPERATION (Continued)AC
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M2764ADEVICE OPERATION (Continued)T
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M2764APROGRAMMING WAVEFORMSV1HADDRE
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M2764AORDERING INFORMATIONPart Numb
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M27128ABLOCK DIAGRAMVceO--GND o--
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M27128AREAD OPERATION (Continued)AC
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M27128ADEVICE OPERATION (Continued)
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M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
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M27256BLOCK DIAGRAMVeco----GNOo-
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M27256READ OPERATION (Continued)AC
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M27256DEVICE OPERATION (Continued)P
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M27256PROGRAMMING WAVEFORMSPROGRAMP
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M27256ORDERING INFORMATIONPart Numb
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M27512BLOCK DIAGRAMVee o-----?GNOO-
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M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
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M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
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ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
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ETC2716SWITCHING TIME WAVEFORMSR.ed
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ETC273232K BIT (4K x 8) CMOS UV ERA
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ETC2732READ OPERATIONDC CHARACTERIS
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ETC2732DEVICE OPERATIONThe five mod
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ETC2732PROGRAMMING WAVEFOR'''SNote:
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ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
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TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
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TS27C64AQORDERING INFORMATIONPart N
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TS27C256QBLOCK DIAGRAMVee 0----.GND
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TS27C256QAC TEST CONDITIONSOutput L
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TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
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M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
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ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
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ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
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ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
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ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
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TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
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ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
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M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
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ST24C02FIG. 2A· DATA TRANSFER SEQU
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ST24C02ELECTRICAL CHARACTERISTICSAC
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ST24C02FIG. 4A· PAGE WRITEBUS ACTI
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TS59C111 K BIT SERIAL CMOS EEPROM
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TS59C11READ OPERATIONDC CHARACTERIS
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TS59C11The READ instruction is the
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TS59C11FIG. 5b - ERAL (Erase all) M
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~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
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TS93C46READ OPERATIONDC CHARACTERIS
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TS93C46INSTRUCTION TIMINGSREADSK ~u
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~TS93C46ORDERING INFORMATIONPart Nu
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ST93C56BLOCK DIAGRAMPROTECTREGISTER
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M2316H16K-BIT READ ONLY MEMORY• S
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M2316HSTATIC ELECTRICAL CHARACTERIS
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M2332M233332K-BIT READ ONLY MEMORY
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M2332/M2333DC AND OPERATING CHARACT
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~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
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M2364DC AND OPERATING CHARACTERISTI
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M236564K-BIT READ ONLY MEMORY• PI
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M2365DC AND OPERATING CHARACTERISTI
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STATIC RAM DEVICES275
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MK48Z02N2(B)-12115/20/25DESCRIPTION
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MK48Z02112(B)-12115/20/25WRITE MODE
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MK48Z02/12(B)-12/15/20/25FIGURE 6.
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MK48Z02/12(B)-12/15/20/25FIGURE 7.
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MK48Z02112(B}-12115/20/25AC TEST CO
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MK48C02A/12A(K, N)·15/20/252K x 8
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MK48C02AI12A(K,N)-15/20/25OPERATION
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MK48C02A/12A(K, N)-15/20/25DATA RET
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MK48C02A112A(K,N)-15/20/25FIGURE 6.
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MK48C02A112A(K,N)-15/20/25AC TEST C
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MK48T02/12(B)-12/15120/252K x 8 ZER
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MK48T02/12(B)-12/15/20/25OPERATIONR
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MK48T02N 2(8)-12/15/20/25CLOCK OPER
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MK48T02112(B)-12/15/20/25The FT bit
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MK48T02112(B)-12115/20/25PREDICTING
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MK48T02112(B)-12/15/20/25~redlctlng
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MK48TD2/12(B)-12115/20/25ABSOWTE MA
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M K48Z08/18/09/19(B)·15/201258K x
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MK48Z08/18/09/19(B)-15/20/25OPERATI
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MK48Z08118/09/19(B)-15/20/25AC ELEC
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MK48Z08118/09119(B)-15/20/25DATA RE
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MK48Z08118/09119(B)-15/20/25ABSOWTE
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MK48Z08/18/09/19(B)-15/20/25PACKAGE
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MKI48Z02112(B)-15/20/25DESCRIPTIONT
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M KI48Z02112(B)-15/20J25WRITE MODET
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MKI48Z02/12(B.)-15/20/25FIGURE.6. P
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MKI48Z02/12(B)-15/20/25FIGURE 7. MK
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MKI48Z02112(B)-1S/20/2SAC TEST COND
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~ SGS-THOMSON..""! L ~o©oo@rn[!J~
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MK48T08 (8)-10/12/15/20READ MODEThe
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MK48T08 (8)-10/12/15/20AC ELECTRICA
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MK48T08 (8)-10/12/15/20CLOCK OPERAT
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MK48T08 (B)-10112/15/20FIGURE 8. FR
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MK48T08 (8)-10/12/15/20rhe t 10/0 f
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MK48T08 (8)-10/12/15/20PACKAGE DESC
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STATIC RAM DEVICESCACHE TAG RAM353
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MK41 HSO(N, P)-20/25/35FIGURE 2. CO
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MK41H80(N,P)-20/25/35APPLICATIONThe
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MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
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MK41 H80(N ,P)-20/25/35NORMALIZED D
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MK41H8O(N,P),-2OI2513522 PIN "P" PA
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MK4202(Q)-20TRUTH TABLERS S E WHi -
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MK4202(Q)-20DEVICE DESCRIPTION AND
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MK4202(Q)-20READ MODEThe MK4202 is
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MK4202(Q)-20COMPARE CYCLE TIMINGEle
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MK4202(Q)-20FIGURE 5. W WRITE CYCLE
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MK4202(Q)-20FIGURE 10. CHIP SELECT
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MK4202(Q)-20FIGURE 15. LATE WRITE·
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MK4202(Q)-20FIGURE 21. RESET CYCLEr
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MK4202(Q)-20AC TEST CONDITIONSInput
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MK48H74(N,P,E)·35/45/55DESCRIPTION
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MK48H74(N,P,E)-35/45/55WRITE MODETh
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MK48H74(N, P, E)-35/45/S5COMPARE MO
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MK48H74(N,P,E)-35/45/55APPLICATIONT
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MK48H74(N,P,E)-35/45/55AC TEST COND
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STATIC RAM DEVICESFIFO395
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MK4501(N,K)-65/80/10112115/20a rate
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MK4501 (N, K)-65/80/1 0112/15/20REA
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MK4501 (N, K)-65/80/10/12/15/20RESE
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M K4501(N, K)-65/80110/12115/20SING
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MK4501(N,K)-65/80110112/15/20EXPANS
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MK4501(N, K)-65/80110/12/15/20COMPO
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MK4501 (N, K)-65/80110112115/20FIGU
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~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
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MK4503(N,K)-50/65/80/10/12/15/20WRI
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MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
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MK4503(N ,K)-50/65/80110112/15/20RE
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MK4S03(N, K)-S0/6S/80110112/1S/20HA
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MK4S03(N ,K)-SO/6S/80110112I1S/20EX
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MK4503(N, K)-50/65/80/10112/15/20CO
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MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
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MK4511(N,K)-12/15/20512 x 8 CMOS Bi
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MK4511(N,K)-12115/20READ MODEThe MK
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MK4511(N,K)-12115/20DUAL PORT OPERA
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MK4511 (N,K)-12115/20IMPLEMENTATION
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MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440: MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444: M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446: MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448: MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450: M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452: MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454: MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456: MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458: MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460: MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462: MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464: MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466: MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468: MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470: MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472: MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474: MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476: MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479: MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481: MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483: MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485: MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487: MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489: MK41H681MK41H69(N,P)-20/25/354K x 4
Page 492 and 493: MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495: MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497: MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499: t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501: MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503: MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505: MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507: MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509: MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511: MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513: MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515: MK41 H87(N)-25/35/45AC TEST CONDITI
Page 516 and 517: .35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519: MK48H64/MK48H65(N,P)-35/45/55noREAD
Page 520 and 521: MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523: MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524: SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527: Information furnished is believed t
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