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ST27C256FN-ST27C256PORDERING INFORMATION (ST27C256P)Part NumberAccess TimeSupply VoltageTemp. RangePackageST27C256· 17CPST27C256·20CPST27C256·25CPST27C256·30CPST27C256· 17VPST27C256·20VPST27C256·25VPST27C256·30VPST27C256· 17TPST27C256·20TPST27C256·25TPST27C256·30TP170 ns200 ns250 ns300 ns170 ns200 ns250 ns300 ns170 ns200 ns250 ns300 ns5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%5V±10%to + 70°C DIP·28to + 70°C DIP·28o to + 70°C Dlp·28o to + 70°C DIP·28-40 to + 85°C DIP·28-40 to + 85°C DIP·28-40 to + 85°C DIP·28-40 to + 85°C DIP·28-40 to +105°C DIP·28-40 to +105°C DIP·28-40 to +105°C DIP·28-40 to + 105°C Dlp·28PACKAGE MECHANICAL DATA28·PIN PLASTIC DIP1-------'''-------Dim.mminchesMin Typ Max Min Typ MaxAa 1 0,63 0,0258 0,45 0.D16b 1 0,23 0,31 0,009 0,012b 2 1.27 0,050C0 37,34 1.470E 15,20 16,66 0,596 0,657e 2,54 0,100e3 33,02 1.300e4F 14,10 0,555I 4,45 0,175l 3,30 0,130K1K29/10195
ST27C256FN-ST27C256PORDERING INFORMATION (ST27C256FN)Part Number Access Time Supply VoltageTemp. RangePackageST27C256·17CFN 170 ns 5V±10%ST27C256·20CFN 200 ns 5V±10%ST27C256·25CFN 250 ns 5V±10%ST27C256·30CFN 300 ns 5V±10%ST27C256·17VFN 170 ns 5V±10o<strong>Al</strong>ST27C256-20VFN 200 ns 5V±10%ST27C256-25VFN 250 ns 5V±10%ST27C256·30VFN 300 ns 5V±10%ST27C256-17TFN 170 ns 5V±10%ST27C256-20TFN 200 ns 5V±10%ST27C256-25TFN 250 ns 5V±10%ST27C256-30TFN 300 ns 5V±10%010 + 70°C PLCC32010 + 70°C PLCC32010 + 70°C PLCC32010 + 70°C PLCC32-4010 + 85°C PLCC32-4010 + 85°C PLCC32-4010 + 85°C PLCC32-4010 + 85°C PLCC32-4010 +105°C PLCC32-4010 + 105°C PLCC32-4010 + 105°C PLCC32-4010 + 105°C PLCC32PACKAGE MECHANICAL DATAPLCC32·32·LEAD PLASTIC LEADED CHIP CARRIER'--n-rTT"TT"rT"'1"l"TT"r r.023.029~1 "1r-.050I NOMDim.mmInchesllin Max Min MaxA 3.04 3.55 .120 .140A 1 1.98 2.41 .078 .095B 0.33 0.53 .013 .021B 1 0.66 0.81 .028 .0320 12.31 12.57 .485 .49501 11.35 11.50 .447 .453D2 9.90 10.92 .390 .430E 14.85 15.11 .585 .595E1 13.89 14.04 .547 .553E2 12.44 13.46 .490 .53010/10196
Page 2 and 3:
MEMORY PRODUCTSDATABOOK1st EDITIONJ
Page 4:
TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
Page 12 and 13:
SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21:
12 32Kx8 NMOS M27256FUV EPROMPRODUC
Page 22 and 23:
VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
Page 24:
EPROM DEVICESNMOS UV EPROM23
Page 27 and 28:
ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
Page 36 and 37:
M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
Page 42:
M2732APROGRAMMING OPERATION (Contin
Page 45 and 46:
M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
Page 47 and 48:
M2764AREAD OPERATION (Continued)AC
Page 49 and 50:
M2764ADEVICE OPERATION (Continued)T
Page 51 and 52:
M2764APROGRAMMING WAVEFORMSV1HADDRE
Page 53 and 54:
M2764AORDERING INFORMATIONPart Numb
Page 55 and 56:
M27128ABLOCK DIAGRAMVceO--GND o--
Page 57 and 58:
M27128AREAD OPERATION (Continued)AC
Page 59 and 60:
M27128ADEVICE OPERATION (Continued)
Page 61 and 62:
M27128APROGRAMMING WAVEFORMSIVIHADD
Page 63 and 64:
M27128AORDI:RING INFORMATIONPart Nu
Page 65 and 66:
M27256BLOCK DIAGRAMVeco----GNOo-
Page 67 and 68:
M27256READ OPERATION (Continued)AC
Page 69 and 70:
M27256DEVICE OPERATION (Continued)P
Page 71 and 72:
M27256PROGRAMMING WAVEFORMSPROGRAMP
Page 73 and 74:
M27256ORDERING INFORMATIONPart Numb
Page 75 and 76:
M27512BLOCK DIAGRAMVee o-----?GNOO-
Page 77 and 78:
M27512AC TEST CONDITIONSOutput Load
Page 79 and 80:
M27512DEVICE OPERATIONS (Continued)
Page 81 and 82:
M27512DEVICE OPERATION (Continued)M
Page 83 and 84:
M27512PROGRAMMING OPERATION (T amb=
Page 85 and 86:
M27512M27512 DESIGN INNOVATIONS FOR
Page 87 and 88:
M27512Figure 7 - M27512 Sensing sch
Page 90:
EPROM DEVICESCMOS UV EPROM89
Page 93 and 94:
ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
Page 95 and 96:
ETC2716AC TEST CONDITIONSOutput Loa
Page 97 and 98:
ETC2716ERASING~he ETC?716 !s erased
Page 99 and 100:
ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103:
ETC273232K BIT (4K x 8) CMOS UV ERA
Page 104 and 105:
ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107:
ETC2732DEVICE OPERATIONThe five mod
Page 108 and 109:
ETC2732PROGRAMMING WAVEFOR'''SNote:
Page 110 and 111:
ETC2732SWITCHING TIME WAVEFORMSRead
Page 112 and 113:
TS27C64AQ64K (8K x 8) CMOS UV ERASA
Page 114 and 115:
TS27C64AQREAD OPERATIONDC CHARACTER
Page 116 and 117:
TS27C64AQDEVICE OPERATIONThe seven
Page 118 and 119:
TS27C64AQAC TEST CONDITIONSInput ri
Page 120:
TS27C64AQORDERING INFORMATIONPart N
Page 123 and 124:
TS27C256QBLOCK DIAGRAMVee 0----.GND
Page 125 and 126:
TS27C256QAC TEST CONDITIONSOutput L
Page 127 and 128:
TS27C256QERASINGThe TS27C256 is era
Page 129 and 130:
TS27C256QHIGH SPEED PROGRAMMING FLO
Page 131 and 132:
,1,;'"
Page 133 and 134:
ST27C1001BLOCK DIAGRAMv P P cr-----
Page 135 and 136:
M27C1024BLOCK DIAGRAMVpp 0----:---+
Page 137 and 138:
M27C1024AC TEST CONDITIONSOutput Lo
Page 139 and 140:
M27C,1024PROGRAM INHIBITProgramming
Page 141 and 142:
M27C1024PROGRAMMING WAVEFORMSVIHADD
Page 143 and 144:
M27C1024ORDERING INFORMATIONPart Nu
Page 146 and 147: ST2764AP64K (8K x 8) NMOS ONE TIME
Page 148 and 149: ST2764APREAD OPERA nONDC AND AC CON
Page 150 and 151: ST2764APDEVICE OPERATIONThe seven m
Page 152 and 153: ST2764APPROGRAMMING OPERATION (Tamb
Page 154 and 155: ST2764APFAST PROGRAMMING FLOWCHART9
Page 156 and 157: ST27128AP128K (16K x 8) NMOS ONE TI
Page 158 and 159: ST27128APREAD OPERATIONDC AND AC CO
Page 160 and 161: ST27128APDEVICE OPERATIONThe seven
Page 162 and 163: ST27128APPROGRAMMING OPERATION (Tam
Page 164 and 165: ST27128APFAST PROGRAMMING FLOWCHART
Page 166 and 167: ST27256P256K (32K x 8) NMOS ONE TIM
Page 168 and 169: ST27256PREAD OPERATIONDC AND AC CON
Page 170 and 171: ST27256PDEVICE OPERATIONThe eight m
Page 172 and 173: ST27256PPROGRAMMING OPERATION (Tamb
Page 174 and 175: ST27256PFAST PROGRAMMING FLOWCHARTF
Page 176: EPROM DEVICESCMOS OTP ROM175
Page 179 and 180: TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
Page 181 and 182: TS27C64AFN-TS27C64APAC TEST CONDITI
Page 183 and 184: TS27C64FN-TS27C64APPROGRAMMINGOPERA
Page 185 and 186: TS27C64AFN-TS27C64APHIGH SPEED PROG
Page 187 and 188: TS27C64AFN~TS27C64APORDERING INFORM
Page 189 and 190: ST27C256FN-ST27C256PBLOCK DIAGRAMVc
Page 191 and 192: ST27C256FN·ST27C256PAC TEST CONDIT
Page 193 and 194: ST27C256FN-ST27C256PPROGRAMMING CHA
Page 195: ST27C256FN·ST27C256PHIGH SPEED PRO
Page 200 and 201: SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
Page 202 and 203: M8571ELECTRICAL CHARACTERISTICS (0
Page 204 and 205: M8571S-BUS DESCRIPTION (Continued)A
Page 206 and 207: M8571S·BUS INTERFACEThe serial, 3-
Page 208 and 209: M8571MASTER. READS AFTER SETTING WO
Page 210: M8571ORDERING INFORMATIONPort Numbe
Page 213 and 214: M9306BLOCK DIAGRAM00DI---+-+-+-+---
Page 215 and 216: M93D6FUNCTIONAL DESCRIPTIONThe inpu
Page 217 and 218: M9306ORDERING INFORMATIONPart Numbe
Page 219 and 220: M9346BLOCK DIAGRAMDl~-r------------
Page 221 and 222: M9346FUNCTIONAL DESCRIPTIONThe inpu
Page 223 and 224: M9346INSTRUCTION SETInstruction S8
Page 225 and 226: M9346TIMING DIAGRAMS (Continued)INS
Page 228: EEPROM DEVICESCMOS EEPROM227
Page 231 and 232: ST24C02BLOCK DIAGRAMseL--~~--~-----
Page 233 and 234: ST24C02FIG. 2A· DATA TRANSFER SEQU
Page 235 and 236: ST24C02ELECTRICAL CHARACTERISTICSAC
Page 237 and 238: ST24C02FIG. 4A· PAGE WRITEBUS ACTI
Page 240 and 241: TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243: TS59C11READ OPERATIONDC CHARACTERIS
Page 244 and 245: TS59C11The READ instruction is the
Page 246 and 247:
TS59C11FIG. 5b - ERAL (Erase all) M
Page 248 and 249:
~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
Page 250 and 251:
TS93C46READ OPERATIONDC CHARACTERIS
Page 252 and 253:
TS93C46INSTRUCTION TIMINGSREADSK ~u
Page 254:
~TS93C46ORDERING INFORMATIONPart Nu
Page 257 and 258:
ST93C56BLOCK DIAGRAMPROTECTREGISTER
Page 260 and 261:
M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263:
M2316HSTATIC ELECTRICAL CHARACTERIS
Page 264 and 265:
M2332M233332K-BIT READ ONLY MEMORY
Page 266 and 267:
M2332/M2333DC AND OPERATING CHARACT
Page 268 and 269:
~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
Page 270 and 271:
M2364DC AND OPERATING CHARACTERISTI
Page 272 and 273:
M236564K-BIT READ ONLY MEMORY• PI
Page 274 and 275:
M2365DC AND OPERATING CHARACTERISTI
Page 276:
STATIC RAM DEVICES275
Page 279 and 280:
MK48Z02N2(B)-12115/20/25DESCRIPTION
Page 281 and 282:
MK48Z02112(B)-12115/20/25WRITE MODE
Page 283 and 284:
MK48Z02/12(B)-12/15/20/25FIGURE 6.
Page 285 and 286:
MK48Z02/12(B)-12/15/20/25FIGURE 7.
Page 287 and 288:
MK48Z02112(B}-12115/20/25AC TEST CO
Page 290 and 291:
MK48C02A/12A(K, N)·15/20/252K x 8
Page 292 and 293:
MK48C02AI12A(K,N)-15/20/25OPERATION
Page 294 and 295:
MK48C02A/12A(K, N)-15/20/25DATA RET
Page 296 and 297:
MK48C02A112A(K,N)-15/20/25FIGURE 6.
Page 298 and 299:
MK48C02A112A(K,N)-15/20/25AC TEST C
Page 300 and 301:
MK48T02/12(B)-12/15120/252K x 8 ZER
Page 302 and 303:
MK48T02/12(B)-12/15/20/25OPERATIONR
Page 304 and 305:
MK48T02N 2(8)-12/15/20/25CLOCK OPER
Page 306 and 307:
MK48T02112(B)-12/15/20/25The FT bit
Page 308 and 309:
MK48T02112(B)-12115/20/25PREDICTING
Page 310 and 311:
MK48T02112(B)-12/15/20/25~redlctlng
Page 312 and 313:
MK48TD2/12(B)-12115/20/25ABSOWTE MA
Page 314 and 315:
M K48Z08/18/09/19(B)·15/201258K x
Page 316 and 317:
MK48Z08/18/09/19(B)-15/20/25OPERATI
Page 319 and 320:
MK48Z08118/09/19(B)-15/20/25AC ELEC
Page 321 and 322:
MK48Z08118/09119(B)-15/20/25DATA RE
Page 323 and 324:
MK48Z08118/09119(B)-15/20/25ABSOWTE
Page 325 and 326:
MK48Z08/18/09/19(B)-15/20/25PACKAGE
Page 327 and 328:
MKI48Z02112(B)-15/20/25DESCRIPTIONT
Page 329 and 330:
M KI48Z02112(B)-15/20J25WRITE MODET
Page 331 and 332:
MKI48Z02/12(B.)-15/20/25FIGURE.6. P
Page 333 and 334:
MKI48Z02/12(B)-15/20/25FIGURE 7. MK
Page 335 and 336:
MKI48Z02112(B)-1S/20/2SAC TEST COND
Page 338 and 339:
~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341:
MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343:
MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345:
MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347:
MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349:
MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350:
MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354:
STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358:
MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360:
MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362:
MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364:
MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366:
MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368:
MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370:
MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372:
MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374:
MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376:
MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378:
MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380:
MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382:
MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384:
MK4202(Q)-20AC TEST CONDITIONSInput
Page 385 and 386:
MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 387 and 388:
MK48H74(N,P,E)-35/45/55WRITE MODETh
Page 389 and 390:
MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392:
MK48H74(N,P,E)-35/45/55APPLICATIONT
Page 393 and 394:
MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396:
STATIC RAM DEVICESFIFO395
Page 399 and 400:
MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402:
MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404:
MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406:
M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408:
MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410:
MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412:
MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415:
~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425:
MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427:
MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429:
MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431:
MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433:
MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435:
MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466:
MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485:
MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507:
MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509:
MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511:
MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513:
MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
Page 516 and 517:
.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
Page 520 and 521:
MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523:
MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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