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MK45264/45265(N)-55noOverlapping Read and Write StrobesOverlapping Read and Write strobes on a given port timing diagrams are provided only to illustrate theis neither tested nor recommended. The following relationship between the control functions.FIGURE 25. OVERLAPPING READIWRITE TIMING~ _____________________ tp ______________________ ~DOx -------< DATA OUTDATA INNOTE: THE SECOND D OUT IS THE SAME AS THE FIRST. AOVERLAPPING WRITE DOES NOT INCREMENT THE READ AD·DRESS COUNTER.FIGURE 26. OVERLAPPING READIWRITE TIMINGI-+------tp---........,~DOX -------{NOTE: THE SECOND D OUT IS NOT THE SAME AS THE FIRST.IT IS, IN. FACT, THE NEXT READ DATA. AN OVERLAPPING WRITEDOES NOT BLOCK THE READ STROBE FROM INCREMENTINGTHE READ ADDRESS COUNTER.17/18473
MK45264/45265(N)-55noORDERING INFORMATIONPART NO. ACCESS TIMERIW CYCLETEMPERATURECLOCK FREQ. PACKAGE TYPETIMERANGEMK45264N·55 55 ns 75 ns 13.3 MHz 24 Pin Plastic DIP 0° to 70°CMK45265N-55 55 ns 75 ns 13.3 MHz 24 Pin Plastic DIP 0° to 70°CMK45264N-70 70 ns 95 ns 10.5 MHz 24 Pin Plastic DIP 0° to 70°CMK45265N-70 70 ns 95 ns 10.5 MHz 24 Pin Plastic DIP 0° to 70°C18/18474
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
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TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
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SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21:
12 32Kx8 NMOS M27256FUV EPROMPRODUC
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VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
Page 27 and 28:
ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
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M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
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M2732APROGRAMMING OPERATION (Contin
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M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
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M2764AREAD OPERATION (Continued)AC
Page 49 and 50:
M2764ADEVICE OPERATION (Continued)T
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M2764APROGRAMMING WAVEFORMSV1HADDRE
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M2764AORDERING INFORMATIONPart Numb
Page 55 and 56:
M27128ABLOCK DIAGRAMVceO--GND o--
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M27128AREAD OPERATION (Continued)AC
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M27128ADEVICE OPERATION (Continued)
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M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
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M27256BLOCK DIAGRAMVeco----GNOo-
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M27256READ OPERATION (Continued)AC
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M27256DEVICE OPERATION (Continued)P
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M27256PROGRAMMING WAVEFORMSPROGRAMP
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M27256ORDERING INFORMATIONPart Numb
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M27512BLOCK DIAGRAMVee o-----?GNOO-
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M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
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M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
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ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
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ETC2716SWITCHING TIME WAVEFORMSR.ed
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ETC273232K BIT (4K x 8) CMOS UV ERA
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ETC2732READ OPERATIONDC CHARACTERIS
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ETC2732DEVICE OPERATIONThe five mod
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ETC2732PROGRAMMING WAVEFOR'''SNote:
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ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
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TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
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TS27C64AQORDERING INFORMATIONPart N
Page 123 and 124:
TS27C256QBLOCK DIAGRAMVee 0----.GND
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TS27C256QAC TEST CONDITIONSOutput L
Page 127 and 128:
TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
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M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
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ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
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ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
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ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
Page 172 and 173:
ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
Page 181 and 182:
TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
Page 193 and 194:
ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
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M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
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ST24C02FIG. 2A· DATA TRANSFER SEQU
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ST24C02ELECTRICAL CHARACTERISTICSAC
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ST24C02FIG. 4A· PAGE WRITEBUS ACTI
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TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243:
TS59C11READ OPERATIONDC CHARACTERIS
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TS59C11The READ instruction is the
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TS59C11FIG. 5b - ERAL (Erase all) M
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~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
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TS93C46READ OPERATIONDC CHARACTERIS
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TS93C46INSTRUCTION TIMINGSREADSK ~u
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~TS93C46ORDERING INFORMATIONPart Nu
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ST93C56BLOCK DIAGRAMPROTECTREGISTER
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M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263:
M2316HSTATIC ELECTRICAL CHARACTERIS
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M2332M233332K-BIT READ ONLY MEMORY
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M2332/M2333DC AND OPERATING CHARACT
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~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
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M2364DC AND OPERATING CHARACTERISTI
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M236564K-BIT READ ONLY MEMORY• PI
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M2365DC AND OPERATING CHARACTERISTI
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STATIC RAM DEVICES275
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MK48Z02N2(B)-12115/20/25DESCRIPTION
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MK48Z02112(B)-12115/20/25WRITE MODE
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MK48Z02/12(B)-12/15/20/25FIGURE 6.
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MK48Z02/12(B)-12/15/20/25FIGURE 7.
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MK48Z02112(B}-12115/20/25AC TEST CO
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MK48C02A/12A(K, N)·15/20/252K x 8
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MK48C02AI12A(K,N)-15/20/25OPERATION
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MK48C02A/12A(K, N)-15/20/25DATA RET
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MK48C02A112A(K,N)-15/20/25FIGURE 6.
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MK48C02A112A(K,N)-15/20/25AC TEST C
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MK48T02/12(B)-12/15120/252K x 8 ZER
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MK48T02/12(B)-12/15/20/25OPERATIONR
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MK48T02N 2(8)-12/15/20/25CLOCK OPER
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MK48T02112(B)-12/15/20/25The FT bit
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MK48T02112(B)-12115/20/25PREDICTING
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MK48T02112(B)-12/15/20/25~redlctlng
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MK48TD2/12(B)-12115/20/25ABSOWTE MA
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M K48Z08/18/09/19(B)·15/201258K x
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MK48Z08/18/09/19(B)-15/20/25OPERATI
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MK48Z08118/09/19(B)-15/20/25AC ELEC
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MK48Z08118/09119(B)-15/20/25DATA RE
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MK48Z08118/09119(B)-15/20/25ABSOWTE
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MK48Z08/18/09/19(B)-15/20/25PACKAGE
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MKI48Z02112(B)-15/20/25DESCRIPTIONT
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M KI48Z02112(B)-15/20J25WRITE MODET
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MKI48Z02/12(B.)-15/20/25FIGURE.6. P
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MKI48Z02/12(B)-15/20/25FIGURE 7. MK
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MKI48Z02112(B)-1S/20/2SAC TEST COND
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~ SGS-THOMSON..""! L ~o©oo@rn[!J~
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MK48T08 (8)-10/12/15/20READ MODEThe
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MK48T08 (8)-10/12/15/20AC ELECTRICA
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MK48T08 (8)-10/12/15/20CLOCK OPERAT
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MK48T08 (B)-10112/15/20FIGURE 8. FR
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MK48T08 (8)-10/12/15/20rhe t 10/0 f
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MK48T08 (8)-10/12/15/20PACKAGE DESC
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STATIC RAM DEVICESCACHE TAG RAM353
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MK41 HSO(N, P)-20/25/35FIGURE 2. CO
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MK41H80(N,P)-20/25/35APPLICATIONThe
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MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
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MK41 H80(N ,P)-20/25/35NORMALIZED D
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MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368:
MK4202(Q)-20TRUTH TABLERS S E WHi -
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MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372:
MK4202(Q)-20READ MODEThe MK4202 is
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MK4202(Q)-20COMPARE CYCLE TIMINGEle
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MK4202(Q)-20FIGURE 5. W WRITE CYCLE
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MK4202(Q)-20FIGURE 10. CHIP SELECT
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MK4202(Q)-20FIGURE 15. LATE WRITE·
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MK4202(Q)-20FIGURE 21. RESET CYCLEr
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MK4202(Q)-20AC TEST CONDITIONSInput
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MK48H74(N,P,E)·35/45/55DESCRIPTION
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MK48H74(N,P,E)-35/45/55WRITE MODETh
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MK48H74(N, P, E)-35/45/S5COMPARE MO
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MK48H74(N,P,E)-35/45/55APPLICATIONT
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MK48H74(N,P,E)-35/45/55AC TEST COND
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STATIC RAM DEVICESFIFO395
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MK4501(N,K)-65/80/10112115/20a rate
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MK4501 (N, K)-65/80/1 0112/15/20REA
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MK4501 (N, K)-65/80/10/12/15/20RESE
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M K4501(N, K)-65/80110/12115/20SING
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MK4501(N,K)-65/80110112/15/20EXPANS
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MK4501(N, K)-65/80110/12/15/20COMPO
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MK4501 (N, K)-65/80110112115/20FIGU
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~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425: MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427: MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429: MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431: MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433: MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435: MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437: MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439: MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440: MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444: M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446: MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448: MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450: M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452: MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454: MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456: MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458: MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460: MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462: MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464: MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466: MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468: MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470: MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472: MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473: MK45264/45265(~)-5snoWidth Expansio
Page 478 and 479: MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481: MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483: MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485: MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487: MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489: MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491: MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493: MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495: MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497: MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499: t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501: MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503: MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505: MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507: MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509: MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511: MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513: MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515: MK41 H87(N)-25/35/45AC TEST CONDITI
Page 516 and 517: .35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519: MK48H64/MK48H65(N,P)-35/45/55noREAD
Page 520 and 521: MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523: MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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