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ETC2716READ OPERATIONDC CHARACTERISTICS TA=O°C to + 70°C, VCC=5V±5%, Vpp=VCC (2), VSS=OV, (Unless otherwisespecilied)(6)Symbol Parameter Test Conditions Min. Typ. Max. UnitsIII Input Current VIN = VCC or GND - - 10 p,AILO Output Leakage Current VOUT=5.25V, CE/PGM=VIH - - 10 p,AVIL Input Low Voltage -0.1 - 0.8 VVIH(4) Input High Voltage 2.0 - VCC+1 VVOU Output Low Voltage IOL=2.1 mA - - 0.45 VVOHI Output High Voltage IOH= -400 p,A 2.4 - - VVOL2 Output Low Voltage IOL=O p,A - - 0.1 VVOH2 Output High Voltage IOH=O p,A Vcc-0.1 - - VIppi Vpp Supply Current Vpp=5.25V - - 10 p,AICCI VCC Supply Current Active CE/PGM, OE = VIL(TTL Levels) Address = VIH or VIL - 2 10 mAFrequency 1 MHz, I/O = OmAICC2 V CC Supply Current Active CE/PGM = OE = VIL (Note 5)(CMOS Levels) Addresses=GND or VCC - 1 5 mAFrequency 1MHz, 1/0=OmAIccssl V CC Supply Current Standby CE/PGM=VIH - 0,1 1 mAICCSS2 V CC Supply Current Standby CE/PGM=Vcc - 0,01 0,1 mAAC CHARACTERISTICS (TA = O°C to + 70°C, VCC = 5V ±5%, VPP = VCC, VSS = OV; Unless otherwisespecilied)(6).Symbol ETC2716-1 ETC2716 (-V)ParameterTest Conditions<strong>Al</strong>ternate StandardMin. Max. Min. Max.tACC TAVOV Address to Output Delay CE/PGM=OE=VIL - 350 - 450 nstCE TELOV CE to Output Delay OE=VIL - 350 - 450 nstOE TGLOV Output Enable to CE/PGM=VIL - 120 - 120 nsOutput DelaytOF(5) TGHOZ OE or CE High to CE/PGM=VIL 0 100 0 100 nsOutput Hi-ZtOH TAXOX Address to Output Hold CE/PGM = OE = VIL 0 - 0 - nstoo TEHOZ CE to Output Hi-Z OE=VIL 0 100 0 100 nsUnitCAPACITANCE(3) TA=25°C, 1=1 MHzSymbol Parameter Test Conditions Min. Typ. Max. UnitCI Input Capacitance VIN=OV 4 6 pFCo Output Capacitance VOUT=OV 8 12 pFNotes I. Typical conditions are for operation at: TA=25°C. VCC=5V, Vpp=VCC, and VSS=OV.2. Vpp may be connected to VCC except during program.3. Capacitance is guarallllllld..lly periodic testing. T A = 25°C, f = I MHz ..4. The inputs (Address, OE, CE) may go above VCC by one volt with no latch up danger. Only the output (data inputs duringprogramming) need be..restrk:Jed to VCC + 0.3V.5. T OF is specified for OE or CE which ever occurs first. This parameter is only sampled and not 100% tested.6. TA = - 40·C to + 85·C for "V" range3/993
ETC2716AC TEST CONDITIONSOutput Load: 1 TTL gate and CL = 100 pFInput Rise and Fall Times::; 20 nsInput pulse levels: O,4SV to 2,4VTiming Measurement Reference LevelInputs, OutputsO.BV and 2VAC TESTING INPUT/OUTPUT WAVEFORMAC TESTING LOAD CIRCUIT2.4=>
Page 2 and 3:
MEMORY PRODUCTSDATABOOK1st EDITIONJ
Page 4:
TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
Page 12 and 13:
SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21:
12 32Kx8 NMOS M27256FUV EPROMPRODUC
Page 22 and 23:
VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
Page 24:
EPROM DEVICESNMOS UV EPROM23
Page 27 and 28:
ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
Page 36 and 37:
M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
Page 42:
M2732APROGRAMMING OPERATION (Contin
Page 45 and 46: M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
Page 47 and 48: M2764AREAD OPERATION (Continued)AC
Page 49 and 50: M2764ADEVICE OPERATION (Continued)T
Page 51 and 52: M2764APROGRAMMING WAVEFORMSV1HADDRE
Page 53 and 54: M2764AORDERING INFORMATIONPart Numb
Page 55 and 56: M27128ABLOCK DIAGRAMVceO--GND o--
Page 57 and 58: M27128AREAD OPERATION (Continued)AC
Page 59 and 60: M27128ADEVICE OPERATION (Continued)
Page 61 and 62: M27128APROGRAMMING WAVEFORMSIVIHADD
Page 63 and 64: M27128AORDI:RING INFORMATIONPart Nu
Page 65 and 66: M27256BLOCK DIAGRAMVeco----GNOo-
Page 67 and 68: M27256READ OPERATION (Continued)AC
Page 69 and 70: M27256DEVICE OPERATION (Continued)P
Page 71 and 72: M27256PROGRAMMING WAVEFORMSPROGRAMP
Page 73 and 74: M27256ORDERING INFORMATIONPart Numb
Page 75 and 76: M27512BLOCK DIAGRAMVee o-----?GNOO-
Page 77 and 78: M27512AC TEST CONDITIONSOutput Load
Page 79 and 80: M27512DEVICE OPERATIONS (Continued)
Page 81 and 82: M27512DEVICE OPERATION (Continued)M
Page 83 and 84: M27512PROGRAMMING OPERATION (T amb=
Page 85 and 86: M27512M27512 DESIGN INNOVATIONS FOR
Page 87 and 88: M27512Figure 7 - M27512 Sensing sch
Page 90: EPROM DEVICESCMOS UV EPROM89
Page 93: ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
Page 97 and 98: ETC2716ERASING~he ETC?716 !s erased
Page 99 and 100: ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103: ETC273232K BIT (4K x 8) CMOS UV ERA
Page 104 and 105: ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107: ETC2732DEVICE OPERATIONThe five mod
Page 108 and 109: ETC2732PROGRAMMING WAVEFOR'''SNote:
Page 110 and 111: ETC2732SWITCHING TIME WAVEFORMSRead
Page 112 and 113: TS27C64AQ64K (8K x 8) CMOS UV ERASA
Page 114 and 115: TS27C64AQREAD OPERATIONDC CHARACTER
Page 116 and 117: TS27C64AQDEVICE OPERATIONThe seven
Page 118 and 119: TS27C64AQAC TEST CONDITIONSInput ri
Page 120: TS27C64AQORDERING INFORMATIONPart N
Page 123 and 124: TS27C256QBLOCK DIAGRAMVee 0----.GND
Page 125 and 126: TS27C256QAC TEST CONDITIONSOutput L
Page 127 and 128: TS27C256QERASINGThe TS27C256 is era
Page 129 and 130: TS27C256QHIGH SPEED PROGRAMMING FLO
Page 131 and 132: ,1,;'"
Page 133 and 134: ST27C1001BLOCK DIAGRAMv P P cr-----
Page 135 and 136: M27C1024BLOCK DIAGRAMVpp 0----:---+
Page 137 and 138: M27C1024AC TEST CONDITIONSOutput Lo
Page 139 and 140: M27C,1024PROGRAM INHIBITProgramming
Page 141 and 142: M27C1024PROGRAMMING WAVEFORMSVIHADD
Page 143 and 144: M27C1024ORDERING INFORMATIONPart Nu
Page 146 and 147:
ST2764AP64K (8K x 8) NMOS ONE TIME
Page 148 and 149:
ST2764APREAD OPERA nONDC AND AC CON
Page 150 and 151:
ST2764APDEVICE OPERATIONThe seven m
Page 152 and 153:
ST2764APPROGRAMMING OPERATION (Tamb
Page 154 and 155:
ST2764APFAST PROGRAMMING FLOWCHART9
Page 156 and 157:
ST27128AP128K (16K x 8) NMOS ONE TI
Page 158 and 159:
ST27128APREAD OPERATIONDC AND AC CO
Page 160 and 161:
ST27128APDEVICE OPERATIONThe seven
Page 162 and 163:
ST27128APPROGRAMMING OPERATION (Tam
Page 164 and 165:
ST27128APFAST PROGRAMMING FLOWCHART
Page 166 and 167:
ST27256P256K (32K x 8) NMOS ONE TIM
Page 168 and 169:
ST27256PREAD OPERATIONDC AND AC CON
Page 170 and 171:
ST27256PDEVICE OPERATIONThe eight m
Page 172 and 173:
ST27256PPROGRAMMING OPERATION (Tamb
Page 174 and 175:
ST27256PFAST PROGRAMMING FLOWCHARTF
Page 176:
EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
Page 181 and 182:
TS27C64AFN-TS27C64APAC TEST CONDITI
Page 183 and 184:
TS27C64FN-TS27C64APPROGRAMMINGOPERA
Page 185 and 186:
TS27C64AFN-TS27C64APHIGH SPEED PROG
Page 187 and 188:
TS27C64AFN~TS27C64APORDERING INFORM
Page 189 and 190:
ST27C256FN-ST27C256PBLOCK DIAGRAMVc
Page 191 and 192:
ST27C256FN·ST27C256PAC TEST CONDIT
Page 193 and 194:
ST27C256FN-ST27C256PPROGRAMMING CHA
Page 195 and 196:
ST27C256FN·ST27C256PHIGH SPEED PRO
Page 197 and 198:
ST27C256FN-ST27C256PORDERING INFORM
Page 200 and 201:
SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
Page 202 and 203:
M8571ELECTRICAL CHARACTERISTICS (0
Page 204 and 205:
M8571S-BUS DESCRIPTION (Continued)A
Page 206 and 207:
M8571S·BUS INTERFACEThe serial, 3-
Page 208 and 209:
M8571MASTER. READS AFTER SETTING WO
Page 210:
M8571ORDERING INFORMATIONPort Numbe
Page 213 and 214:
M9306BLOCK DIAGRAM00DI---+-+-+-+---
Page 215 and 216:
M93D6FUNCTIONAL DESCRIPTIONThe inpu
Page 217 and 218:
M9306ORDERING INFORMATIONPart Numbe
Page 219 and 220:
M9346BLOCK DIAGRAMDl~-r------------
Page 221 and 222:
M9346FUNCTIONAL DESCRIPTIONThe inpu
Page 223 and 224:
M9346INSTRUCTION SETInstruction S8
Page 225 and 226:
M9346TIMING DIAGRAMS (Continued)INS
Page 228:
EEPROM DEVICESCMOS EEPROM227
Page 231 and 232:
ST24C02BLOCK DIAGRAMseL--~~--~-----
Page 233 and 234:
ST24C02FIG. 2A· DATA TRANSFER SEQU
Page 235 and 236:
ST24C02ELECTRICAL CHARACTERISTICSAC
Page 237 and 238:
ST24C02FIG. 4A· PAGE WRITEBUS ACTI
Page 240 and 241:
TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243:
TS59C11READ OPERATIONDC CHARACTERIS
Page 244 and 245:
TS59C11The READ instruction is the
Page 246 and 247:
TS59C11FIG. 5b - ERAL (Erase all) M
Page 248 and 249:
~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
Page 250 and 251:
TS93C46READ OPERATIONDC CHARACTERIS
Page 252 and 253:
TS93C46INSTRUCTION TIMINGSREADSK ~u
Page 254:
~TS93C46ORDERING INFORMATIONPart Nu
Page 257 and 258:
ST93C56BLOCK DIAGRAMPROTECTREGISTER
Page 260 and 261:
M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263:
M2316HSTATIC ELECTRICAL CHARACTERIS
Page 264 and 265:
M2332M233332K-BIT READ ONLY MEMORY
Page 266 and 267:
M2332/M2333DC AND OPERATING CHARACT
Page 268 and 269:
~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
Page 270 and 271:
M2364DC AND OPERATING CHARACTERISTI
Page 272 and 273:
M236564K-BIT READ ONLY MEMORY• PI
Page 274 and 275:
M2365DC AND OPERATING CHARACTERISTI
Page 276:
STATIC RAM DEVICES275
Page 279 and 280:
MK48Z02N2(B)-12115/20/25DESCRIPTION
Page 281 and 282:
MK48Z02112(B)-12115/20/25WRITE MODE
Page 283 and 284:
MK48Z02/12(B)-12/15/20/25FIGURE 6.
Page 285 and 286:
MK48Z02/12(B)-12/15/20/25FIGURE 7.
Page 287 and 288:
MK48Z02112(B}-12115/20/25AC TEST CO
Page 290 and 291:
MK48C02A/12A(K, N)·15/20/252K x 8
Page 292 and 293:
MK48C02AI12A(K,N)-15/20/25OPERATION
Page 294 and 295:
MK48C02A/12A(K, N)-15/20/25DATA RET
Page 296 and 297:
MK48C02A112A(K,N)-15/20/25FIGURE 6.
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MK48C02A112A(K,N)-15/20/25AC TEST C
Page 300 and 301:
MK48T02/12(B)-12/15120/252K x 8 ZER
Page 302 and 303:
MK48T02/12(B)-12/15/20/25OPERATIONR
Page 304 and 305:
MK48T02N 2(8)-12/15/20/25CLOCK OPER
Page 306 and 307:
MK48T02112(B)-12/15/20/25The FT bit
Page 308 and 309:
MK48T02112(B)-12115/20/25PREDICTING
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MK48T02112(B)-12/15/20/25~redlctlng
Page 312 and 313:
MK48TD2/12(B)-12115/20/25ABSOWTE MA
Page 314 and 315:
M K48Z08/18/09/19(B)·15/201258K x
Page 316 and 317:
MK48Z08/18/09/19(B)-15/20/25OPERATI
Page 319 and 320:
MK48Z08118/09/19(B)-15/20/25AC ELEC
Page 321 and 322:
MK48Z08118/09119(B)-15/20/25DATA RE
Page 323 and 324:
MK48Z08118/09119(B)-15/20/25ABSOWTE
Page 325 and 326:
MK48Z08/18/09/19(B)-15/20/25PACKAGE
Page 327 and 328:
MKI48Z02112(B)-15/20/25DESCRIPTIONT
Page 329 and 330:
M KI48Z02112(B)-15/20J25WRITE MODET
Page 331 and 332:
MKI48Z02/12(B.)-15/20/25FIGURE.6. P
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MKI48Z02/12(B)-15/20/25FIGURE 7. MK
Page 335 and 336:
MKI48Z02112(B)-1S/20/2SAC TEST COND
Page 338 and 339:
~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341:
MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343:
MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345:
MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347:
MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349:
MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350:
MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354:
STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358:
MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360:
MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362:
MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364:
MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366:
MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368:
MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370:
MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372:
MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374:
MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376:
MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378:
MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380:
MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382:
MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384:
MK4202(Q)-20AC TEST CONDITIONSInput
Page 385 and 386:
MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 387 and 388:
MK48H74(N,P,E)-35/45/55WRITE MODETh
Page 389 and 390:
MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392:
MK48H74(N,P,E)-35/45/55APPLICATIONT
Page 393 and 394:
MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396:
STATIC RAM DEVICESFIFO395
Page 399 and 400:
MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402:
MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404:
MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406:
M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408:
MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410:
MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412:
MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415:
~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425:
MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427:
MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429:
MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431:
MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433:
MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435:
MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466:
MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485:
MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507:
MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509:
MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511:
MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513:
MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
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.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
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MK48H64/MK48H65(N,P)-35/45/55noWRIT
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MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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