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MK48H74(N,P,E)-35/45/55RESET CLEAR CYCLE TIMINGAC ELECTRICAL CHARACTERISTICS(O·CSTAs70"C) (Vee = 5.0V ±10%)SYMBOLS-35 ·45 ·55ALT STD PARAMETER MIN MAX MIN MAX MIN MAX UNITS NOTEStRC tRSC Flash Clear Cycle Time 70 90 110 nstRs>< tRSL.AX Reset Clear (AS) to InputsDon't Care 0 0 0 nstRSV tRSH.AV AS to Inputs Valid 5 10 10 nstRSP tRSL.RSH Reset (AS) Pulse Width 65 85 100 nstRSM tRSL-MH Reset (AS) to MATCH 25 35 45 nsHighFIGURE 6. MATCH COMPARE TIMINGADDRESSf. tAVMv---l 3.'// / / / / / / / ~ ..... ~ I\.Ii LlLi Lj~, I \ \ \ \ \ \ \ \fDQt MXAX:-"'"1~-1~tGLMH-If=~-1tSLMV ..-II>=f ,~~,~~ 3XXXXXX:,~. t ~n r=-MATCHMATCH VALID7111389
MK48H74(N,P,E)-35/45/55APPLICATIONThe MK48H74 operates from a 5.0 volt supply. It iscompatible with all standard TTL families on all inputsand outputs. The device should share a solidground plane with any other devices interfaced withit, particularly TTL devices. A pull-up resistor is alsorecommended for the AS input. This will ensure thatany low going system noise, coupled onto the input,does not drive RS below V 1H minimumspecifications. This will enhance proper deviceoperation, and avoid possible partial flash clear cycles.Additionally, because the outputs can driverail-to-rail into high impedance loads, the MK48H74can also interface to 5 volt CMOS on all inpClts andoutputs.The MK48H74 provides the system designer with64K fast static memory, a MATCH output, and aBYTEWYDE'" on-board comparator - all in onechip. The MK48H74 compares contents of addressedRAM locations to the current data inputs.A logic one (1) output on the MATCH pin indicatesthat the input data and the RAM contents match.Conversely, a logic zero (0) on the MATCH pin indicatesat least one bit difference between the RAMcontents and input TAG data generating a miss. TheMATCH output is constructed with an open drain arrangement.This provides easy wired-OR implementationwhen generating a composite MATCH signal.In a cache subsystem, the MATCH signal providesthe processor or CPU with the necessary informationconcerning wait state conditions. The purposeof a cache subsystem is to maintain a duplicate copyof a portion of the main memory. When a validmatch occurs, the system processor uses data fromthe fast cache memory, and· avoids longer cyclesto the main memory. Therefore, implementing cachesubsystems with the MK48H74, and providing goodhit or match ratio designs will enhance overall systemperformance.Because high frequency current transients will beassociated with the operation of the MK48H74, powerlines inductance must be minimized on the circuitboard power distribution network. Power andground trace gridding or separate power planes canbe employed to reduce line inductance. Thoughoften times not thought of as such, the traces ona memory board are basically unterminated, low impedancetransmission lines. As such they are subjectto signal reflections manifested as nOise,undershoots and excessive ringing. Series terminationin close proximity to the TTL drivers can improvedriver/signal path impedance matching. Whileexperimentation most often proves to be the onlypractical approach to selection of series resistors,values in the range of 10 to 33 ohms often provemost suitable.FIGURE 7. RESET TIMINGCOMPARERESET CLEAR~------------~~-------t~c--------~ADDRESSMATCHMATCH VALID ~XifNOTE: G = HIGH FOR THIS EXAMPLE8111390
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
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TABLE OF CONTENTSGENERAL INDEX Page
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GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
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SELECTION GUIDECMOS UV EPROMPart Nu
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SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
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SELECTION GUIDEFAST STATIC RAMPart
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12 32Kx8 NMOS M27256FUV EPROMPRODUC
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VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
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ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
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ET2716/M2716SWITCHING TIME WAVEFORM
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M2732A32K (4K x 8) NMOS UV ERASABLE
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M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
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M2732APROGRAMMING OPERATION (Contin
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M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
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M2764AREAD OPERATION (Continued)AC
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M2764ADEVICE OPERATION (Continued)T
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M2764APROGRAMMING WAVEFORMSV1HADDRE
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M2764AORDERING INFORMATIONPart Numb
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M27128ABLOCK DIAGRAMVceO--GND o--
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M27128AREAD OPERATION (Continued)AC
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M27128ADEVICE OPERATION (Continued)
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M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
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M27256BLOCK DIAGRAMVeco----GNOo-
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M27256READ OPERATION (Continued)AC
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M27256DEVICE OPERATION (Continued)P
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M27256PROGRAMMING WAVEFORMSPROGRAMP
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M27256ORDERING INFORMATIONPart Numb
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M27512BLOCK DIAGRAMVee o-----?GNOO-
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M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
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M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
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ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
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ETC2716SWITCHING TIME WAVEFORMSR.ed
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ETC273232K BIT (4K x 8) CMOS UV ERA
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ETC2732READ OPERATIONDC CHARACTERIS
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ETC2732DEVICE OPERATIONThe five mod
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ETC2732PROGRAMMING WAVEFOR'''SNote:
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ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
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TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
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TS27C64AQORDERING INFORMATIONPart N
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TS27C256QBLOCK DIAGRAMVee 0----.GND
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TS27C256QAC TEST CONDITIONSOutput L
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TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
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M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
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ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
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ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
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ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
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ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
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TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
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ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
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M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
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ST24C02FIG. 2A· DATA TRANSFER SEQU
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ST24C02ELECTRICAL CHARACTERISTICSAC
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ST24C02FIG. 4A· PAGE WRITEBUS ACTI
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TS59C111 K BIT SERIAL CMOS EEPROM
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TS59C11READ OPERATIONDC CHARACTERIS
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TS59C11The READ instruction is the
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TS59C11FIG. 5b - ERAL (Erase all) M
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~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
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TS93C46READ OPERATIONDC CHARACTERIS
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TS93C46INSTRUCTION TIMINGSREADSK ~u
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~TS93C46ORDERING INFORMATIONPart Nu
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ST93C56BLOCK DIAGRAMPROTECTREGISTER
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M2316H16K-BIT READ ONLY MEMORY• S
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M2316HSTATIC ELECTRICAL CHARACTERIS
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M2332M233332K-BIT READ ONLY MEMORY
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M2332/M2333DC AND OPERATING CHARACT
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~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
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M2364DC AND OPERATING CHARACTERISTI
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M236564K-BIT READ ONLY MEMORY• PI
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M2365DC AND OPERATING CHARACTERISTI
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STATIC RAM DEVICES275
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MK48Z02N2(B)-12115/20/25DESCRIPTION
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MK48Z02112(B)-12115/20/25WRITE MODE
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MK48Z02/12(B)-12/15/20/25FIGURE 6.
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MK48Z02/12(B)-12/15/20/25FIGURE 7.
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MK48Z02112(B}-12115/20/25AC TEST CO
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MK48C02A/12A(K, N)·15/20/252K x 8
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MK48C02AI12A(K,N)-15/20/25OPERATION
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MK48C02A/12A(K, N)-15/20/25DATA RET
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MK48C02A112A(K,N)-15/20/25FIGURE 6.
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MK48C02A112A(K,N)-15/20/25AC TEST C
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MK48T02/12(B)-12/15120/252K x 8 ZER
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MK48T02/12(B)-12/15/20/25OPERATIONR
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MK48T02N 2(8)-12/15/20/25CLOCK OPER
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MK48T02112(B)-12/15/20/25The FT bit
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MK48T02112(B)-12115/20/25PREDICTING
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MK48T02112(B)-12/15/20/25~redlctlng
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MK48TD2/12(B)-12115/20/25ABSOWTE MA
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M K48Z08/18/09/19(B)·15/201258K x
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MK48Z08/18/09/19(B)-15/20/25OPERATI
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MK48Z08118/09/19(B)-15/20/25AC ELEC
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MK48Z08118/09119(B)-15/20/25DATA RE
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MK48Z08118/09119(B)-15/20/25ABSOWTE
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MK48Z08/18/09/19(B)-15/20/25PACKAGE
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MKI48Z02112(B)-15/20/25DESCRIPTIONT
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M KI48Z02112(B)-15/20J25WRITE MODET
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MKI48Z02/12(B.)-15/20/25FIGURE.6. P
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MKI48Z02/12(B)-15/20/25FIGURE 7. MK
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MKI48Z02112(B)-1S/20/2SAC TEST COND
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~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341: MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343: MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345: MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347: MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349: MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350: MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354: STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358: MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360: MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362: MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364: MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366: MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368: MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370: MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372: MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374: MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376: MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378: MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380: MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382: MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384: MK4202(Q)-20AC TEST CONDITIONSInput
Page 385 and 386: MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 387 and 388: MK48H74(N,P,E)-35/45/55WRITE MODETh
Page 389: MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 393 and 394: MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396: STATIC RAM DEVICESFIFO395
Page 399 and 400: MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402: MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404: MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406: M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408: MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410: MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412: MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415: ~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417: MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419: MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421: MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423: MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425: MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427: MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429: MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431: MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433: MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435: MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437: MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439: MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
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M K4505M/4505S(N)-25/33/50DESCRIPTI
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MK4505M/4505S(N)-25/33/50AC ELECTRI
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MK4505M/4505S(N)-25/33/50FIGURE S.
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M K4505M/4505S(N)-25/33/50FIGURE 9.
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MK4505M/4505S(N)-25/33/50SIMULTANEO
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MK4505M/4505S{N)-25/33/50FIGURE 13.
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MK4505M/4505S(N)-25/33/50ABSOWTE MA
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MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
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MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
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MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
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MK45264/45265(N)-55noFIGURE 8. FULL
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MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
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MK45264/45265(N)-55noFIGURE 18. WRI
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MK4S264/4S26S(N)-SSI7OAC TEST CONDI
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MK45264/45265(~)-5snoWidth Expansio
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MK45264/45265(N)-55noORDERING INFOR
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MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
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MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
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MK41H681MK41H69(N,P)-20/25/354K x 4
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MK41 H68/MK41 H69(N, P)-20/25/35WRI
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MK41H68/MK41 H69(N ,P)-20/25/35APPL
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MK41 H68/MK41 H69(N ,P)-20/25/35NOR
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MK41H68/MK41H69(N,P)-20/25/35ORDERI
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t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
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MK41 H79(N,P)·20125/35WRITE MODETh
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MK41 H79(N, P)-20/25/35ITANDBY MODE
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MK41 H79(N ,P)-20/25/35"C TEST COND
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MK41H79(N,P)-20/25/35~ORMALIZED DC
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MK41 H87(N)-25/35/4564K x 1 CMOS ST
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MK41H87(N)-25/35/45WRITE MODEThe MK
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MK41H87(N)-25/35/45STANDBY MODEThe
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MK41 H87(N)-25/35/45AC TEST CONDITI
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.35, 45, 55, AND 70 ns ADDRESS ACCE
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MK48H64/MK48H65(N,P)-35/45/55noREAD
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MK48H64/MK48H65(N,P)-35/45/55noWRIT
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MK48H64/MK48H65(N,P)-35/45/55noABSO
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SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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