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MK48H74(N, P, E)-35/45/55FIGURE 2. READ TIMING NO. 1 (ADDRESS ACCESS)14--------- tAVAY ---------~ADDRESS~----- I AVOV -----~t AxaxDO PREVIOUS DATA DATA VALIDNOTE: Chip Select and Output Enable are presumed valid, W = VIH'FIGURE 3. READ TIMING NO.2 (W = VADDRESSDO3111385
MK48H74(N,P,E)-35/45/55WRITE MODEThe MK48H74 is in the Write mode whenever theVIi and 8 pins are LOW. Chip Select or VIi must beinactive during Address transitions. The Write beginswith !he concurrence of Chip Select being activewith W LOW. Therefore address setup timesare referenced to Write Enable and Chip Select astAvwL and tAVSL' and is determined to the latter occurringedge. The Write cycll!.can~e terminatedby the earlier rising edge of S or W.!Dhe Output is enabled (8 = LOW, G = LOW), thenW will return the outputs to high impedance withintWLQZ of its falling edge. Care must be taken toavoid bus contention in this type of operation. Datainmust be valid fortovwH to the rising edge ofWrite Enable, or to the rising edge of S, whicheveroccurs fi~t, a'l9 remain valid tWHOX after the risingedge of S or W.WRITE CYCLE TIMINGAC ELECTRICAL CHARACTERISTICS(O°C:sTA:s70°C) (Vee = 5.0 ±10%)SYMBOLS 48H74-35 48H74-45 48H74-55ALT. STD. PARAMETER MIN MAX MIN MAX MIN MAX UNITS NOTEStwe tAVAV Write Cycle Time 35 45 55 nstAS tAVWL Address Set-up Time to 0 0 0 nsWrite Enable LowtAS tAVSL Address Set-up Time to 0 0 0 nsChip SelecttAW tAVWH Address Valid to End 25 35 45 nsof WritetWEW tWLWH Write Pulse Width 25 35 45 nstAH tWHAX Address Hold Time after 0 0 0 nsEnd of Writetesw tSLSH Chip Select to End 25 35 45 nsof WritetWR tSHAX Write Recovery Time 0 0 0 nsto Chip Deselecttow tOVWH Data Valid to End of 25 30 30 nsWritetOH tWHDX Data Hold Time 0 0 0 nstWEL tWHOX Write High to Output 0 0 0 ns 2Low-Z (Active)tWEZ tWLQZ Write Enable to Output 15 20 25 ns 2High-Z4111386
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
Page 4:
TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
Page 12 and 13:
SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
Page 20 and 21:
12 32Kx8 NMOS M27256FUV EPROMPRODUC
Page 22 and 23:
VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
Page 27 and 28:
ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
Page 36 and 37:
M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
Page 40 and 41:
M2732APROGRAMMING OPERATION(l) (T a
Page 42:
M2732APROGRAMMING OPERATION (Contin
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M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
Page 47 and 48:
M2764AREAD OPERATION (Continued)AC
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M2764ADEVICE OPERATION (Continued)T
Page 51 and 52:
M2764APROGRAMMING WAVEFORMSV1HADDRE
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M2764AORDERING INFORMATIONPart Numb
Page 55 and 56:
M27128ABLOCK DIAGRAMVceO--GND o--
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M27128AREAD OPERATION (Continued)AC
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M27128ADEVICE OPERATION (Continued)
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M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
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M27256BLOCK DIAGRAMVeco----GNOo-
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M27256READ OPERATION (Continued)AC
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M27256DEVICE OPERATION (Continued)P
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M27256PROGRAMMING WAVEFORMSPROGRAMP
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M27256ORDERING INFORMATIONPart Numb
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M27512BLOCK DIAGRAMVee o-----?GNOO-
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M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
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M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
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ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
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ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103:
ETC273232K BIT (4K x 8) CMOS UV ERA
Page 104 and 105:
ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107:
ETC2732DEVICE OPERATIONThe five mod
Page 108 and 109:
ETC2732PROGRAMMING WAVEFOR'''SNote:
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ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
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TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
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TS27C64AQORDERING INFORMATIONPart N
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TS27C256QBLOCK DIAGRAMVee 0----.GND
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TS27C256QAC TEST CONDITIONSOutput L
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TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
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M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
Page 148 and 149:
ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
Page 152 and 153:
ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
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ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
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ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
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TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
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ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
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M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
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ST24C02FIG. 2A· DATA TRANSFER SEQU
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ST24C02ELECTRICAL CHARACTERISTICSAC
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ST24C02FIG. 4A· PAGE WRITEBUS ACTI
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TS59C111 K BIT SERIAL CMOS EEPROM
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TS59C11READ OPERATIONDC CHARACTERIS
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TS59C11The READ instruction is the
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TS59C11FIG. 5b - ERAL (Erase all) M
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~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
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TS93C46READ OPERATIONDC CHARACTERIS
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TS93C46INSTRUCTION TIMINGSREADSK ~u
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~TS93C46ORDERING INFORMATIONPart Nu
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ST93C56BLOCK DIAGRAMPROTECTREGISTER
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M2316H16K-BIT READ ONLY MEMORY• S
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M2316HSTATIC ELECTRICAL CHARACTERIS
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M2332M233332K-BIT READ ONLY MEMORY
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M2332/M2333DC AND OPERATING CHARACT
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~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
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M2364DC AND OPERATING CHARACTERISTI
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M236564K-BIT READ ONLY MEMORY• PI
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M2365DC AND OPERATING CHARACTERISTI
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STATIC RAM DEVICES275
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MK48Z02N2(B)-12115/20/25DESCRIPTION
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MK48Z02112(B)-12115/20/25WRITE MODE
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MK48Z02/12(B)-12/15/20/25FIGURE 6.
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MK48Z02/12(B)-12/15/20/25FIGURE 7.
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MK48Z02112(B}-12115/20/25AC TEST CO
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MK48C02A/12A(K, N)·15/20/252K x 8
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MK48C02AI12A(K,N)-15/20/25OPERATION
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MK48C02A/12A(K, N)-15/20/25DATA RET
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MK48C02A112A(K,N)-15/20/25FIGURE 6.
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MK48C02A112A(K,N)-15/20/25AC TEST C
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MK48T02/12(B)-12/15120/252K x 8 ZER
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MK48T02/12(B)-12/15/20/25OPERATIONR
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MK48T02N 2(8)-12/15/20/25CLOCK OPER
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MK48T02112(B)-12/15/20/25The FT bit
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MK48T02112(B)-12115/20/25PREDICTING
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MK48T02112(B)-12/15/20/25~redlctlng
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MK48TD2/12(B)-12115/20/25ABSOWTE MA
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M K48Z08/18/09/19(B)·15/201258K x
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MK48Z08/18/09/19(B)-15/20/25OPERATI
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MK48Z08118/09/19(B)-15/20/25AC ELEC
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MK48Z08118/09119(B)-15/20/25DATA RE
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MK48Z08118/09119(B)-15/20/25ABSOWTE
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MK48Z08/18/09/19(B)-15/20/25PACKAGE
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MKI48Z02112(B)-15/20/25DESCRIPTIONT
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M KI48Z02112(B)-15/20J25WRITE MODET
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MKI48Z02/12(B.)-15/20/25FIGURE.6. P
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MKI48Z02/12(B)-15/20/25FIGURE 7. MK
Page 335 and 336: MKI48Z02112(B)-1S/20/2SAC TEST COND
Page 338 and 339: ~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341: MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343: MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345: MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347: MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349: MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350: MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354: STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358: MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360: MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362: MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364: MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366: MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368: MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370: MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372: MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374: MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376: MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378: MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380: MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382: MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384: MK4202(Q)-20AC TEST CONDITIONSInput
Page 385: MK48H74(N,P,E)·35/45/55DESCRIPTION
Page 389 and 390: MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392: MK48H74(N,P,E)-35/45/55APPLICATIONT
Page 393 and 394: MK48H74(N,P,E)-35/45/55AC TEST COND
Page 396: STATIC RAM DEVICESFIFO395
Page 399 and 400: MK4501(N,K)-65/80/10112115/20a rate
Page 401 and 402: MK4501 (N, K)-65/80/1 0112/15/20REA
Page 403 and 404: MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406: M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408: MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410: MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412: MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415: ~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417: MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419: MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421: MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423: MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425: MK4S03(N ,K)-SO/6S/80110112I1S/20EX
Page 426 and 427: MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429: MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
Page 430 and 431: MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433: MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435: MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
Page 465 and 466:
MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
Page 484 and 485:
MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507:
MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509:
MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511:
MK41H87(N)-25/35/45WRITE MODEThe MK
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MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
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.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
Page 520 and 521:
MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523:
MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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