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MK48Z08118/09/19(B)-15/20/25FIGURE 8. MK48Z08118/09/19 PREDICTED BATTERY LIFE VS TEMPERATURE20 40 50 60 70 80 90DEGREES CELSIUS9/12321
MK48Z08118/09119(B)-15/20/25ABSOWTE MAXIMUM RATINGS·Total Power Dissipation ......................................................... 1.0 wattOutput Current Per Pin .......................................................... 10 mAVoltage On Any Pin Relative To GND ...................................... -0.3 V to +7.0 VAmb!ent Operating (V CQ. On) Temperature (T A) ................................. O°C to +70:CAmbient Storage (Vcc Off) Temperature .................................... -40OC to +85 C·Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicatedin the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extendedperiods of time may affect reliability.CAUTION: Under no conditions can the ''Absolute Maximum Rating" for the voltage on any pin be exceeded sinceit will cause permanent damage. Specifically, do not perform the "standard" continuity test on any input or output pin,i.e do not force these pins below -0.3 V DC.RECOMMENDED DC OPERATING CONDITIONS(OOCsTAS70°C)SYM PARAMETERMIN MAXVcc Supply Voltage (MK48Z08l09)4.75 5.50Vcc Supply Voltage (MK48Z18119)4.50 5.50GND Supply Voltage0 0VIH Logic "1" Voltage <strong>Al</strong>l Inputs 2.2 IVcc + 0.3 VVIL Logic "0" Voltage <strong>Al</strong>l Inputs-0.3 0.8UNITS NOTESV 1V 1V 1V 1V 1,2DC. ELECTRICAL CHARACTERISTICS(OOCsT A s+70OC) (Vcc (min) sVcc sVcc (max»SYM PARAMETERICClICC2Average V cc Power Supply CurrentTTL Standby Current (El = VIH or E2 = VIJICC3 CMOS Standby Current (El
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MEMORY PRODUCTSDATABOOK1st EDITIONJ
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TABLE OF CONTENTSGENERAL INDEX Page
Page 7 and 8:
GENERAL INDEXPageROM DEVICES ......
Page 10 and 11:
GENERAL INFORMATIONThe SGS-THOMSON
Page 12 and 13:
SELECTION GUIDECMOS UV EPROMPart Nu
Page 14 and 15:
SELECTION GUIDECMOS OTP ROMPart Num
Page 16 and 17:
SELECTION GUIDEZEROPOWERPart Number
Page 18 and 19:
SELECTION GUIDEFAST STATIC RAMPart
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12 32Kx8 NMOS M27256FUV EPROMPRODUC
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VFSRAMPRODUCTDESCRIPTIONSGS-THOMSON
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EPROM DEVICESNMOS UV EPROM23
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ET2716/M2716BLOCK DIAGRAM~ VPP'5V+-
Page 29 and 30:
ET2716/M2716AC TEST CONDITIONSOutpu
Page 31 and 32:
ET2716/M2716ERASINGThe M/ET2716 is
Page 33 and 34:
ET2716/M2716SWITCHING TIME WAVEFORM
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M2732A32K (4K x 8) NMOS UV ERASABLE
Page 38 and 39:
M2732AREAD OPERATIONDC AND AC CONDI
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M2732APROGRAMMING OPERATION(l) (T a
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M2732APROGRAMMING OPERATION (Contin
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M2764ABLOCK DIAGRAMDATA OUTPUT00- 0
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M2764AREAD OPERATION (Continued)AC
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M2764ADEVICE OPERATION (Continued)T
Page 51 and 52:
M2764APROGRAMMING WAVEFORMSV1HADDRE
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M2764AORDERING INFORMATIONPart Numb
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M27128ABLOCK DIAGRAMVceO--GND o--
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M27128AREAD OPERATION (Continued)AC
Page 59 and 60:
M27128ADEVICE OPERATION (Continued)
Page 61 and 62:
M27128APROGRAMMING WAVEFORMSIVIHADD
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M27128AORDI:RING INFORMATIONPart Nu
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M27256BLOCK DIAGRAMVeco----GNOo-
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M27256READ OPERATION (Continued)AC
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M27256DEVICE OPERATION (Continued)P
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M27256PROGRAMMING WAVEFORMSPROGRAMP
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M27256ORDERING INFORMATIONPart Numb
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M27512BLOCK DIAGRAMVee o-----?GNOO-
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M27512AC TEST CONDITIONSOutput Load
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M27512DEVICE OPERATIONS (Continued)
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M27512DEVICE OPERATION (Continued)M
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M27512PROGRAMMING OPERATION (T amb=
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M27512M27512 DESIGN INNOVATIONS FOR
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M27512Figure 7 - M27512 Sensing sch
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EPROM DEVICESCMOS UV EPROM89
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ETC2716BLOCK DIAG~AM+-- vpp+-- vcc+
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ETC2716AC TEST CONDITIONSOutput Loa
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ETC2716ERASING~he ETC?716 !s erased
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ETC2716SWITCHING TIME WAVEFORMSR.ed
Page 102 and 103:
ETC273232K BIT (4K x 8) CMOS UV ERA
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ETC2732READ OPERATIONDC CHARACTERIS
Page 106 and 107:
ETC2732DEVICE OPERATIONThe five mod
Page 108 and 109:
ETC2732PROGRAMMING WAVEFOR'''SNote:
Page 110 and 111:
ETC2732SWITCHING TIME WAVEFORMSRead
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TS27C64AQ64K (8K x 8) CMOS UV ERASA
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TS27C64AQREAD OPERATIONDC CHARACTER
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TS27C64AQDEVICE OPERATIONThe seven
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TS27C64AQAC TEST CONDITIONSInput ri
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TS27C64AQORDERING INFORMATIONPart N
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TS27C256QBLOCK DIAGRAMVee 0----.GND
Page 125 and 126:
TS27C256QAC TEST CONDITIONSOutput L
Page 127 and 128:
TS27C256QERASINGThe TS27C256 is era
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TS27C256QHIGH SPEED PROGRAMMING FLO
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,1,;'"
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ST27C1001BLOCK DIAGRAMv P P cr-----
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M27C1024BLOCK DIAGRAMVpp 0----:---+
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M27C1024AC TEST CONDITIONSOutput Lo
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M27C,1024PROGRAM INHIBITProgramming
Page 141 and 142:
M27C1024PROGRAMMING WAVEFORMSVIHADD
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M27C1024ORDERING INFORMATIONPart Nu
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ST2764AP64K (8K x 8) NMOS ONE TIME
Page 148 and 149:
ST2764APREAD OPERA nONDC AND AC CON
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ST2764APDEVICE OPERATIONThe seven m
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ST2764APPROGRAMMING OPERATION (Tamb
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ST2764APFAST PROGRAMMING FLOWCHART9
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ST27128AP128K (16K x 8) NMOS ONE TI
Page 158 and 159:
ST27128APREAD OPERATIONDC AND AC CO
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ST27128APDEVICE OPERATIONThe seven
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ST27128APPROGRAMMING OPERATION (Tam
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ST27128APFAST PROGRAMMING FLOWCHART
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ST27256P256K (32K x 8) NMOS ONE TIM
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ST27256PREAD OPERATIONDC AND AC CON
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ST27256PDEVICE OPERATIONThe eight m
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ST27256PPROGRAMMING OPERATION (Tamb
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ST27256PFAST PROGRAMMING FLOWCHARTF
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EPROM DEVICESCMOS OTP ROM175
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TS27C64AFN-TS27C64APBLOCK DIAGRAMVe
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TS27C64AFN-TS27C64APAC TEST CONDITI
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TS27C64FN-TS27C64APPROGRAMMINGOPERA
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TS27C64AFN-TS27C64APHIGH SPEED PROG
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TS27C64AFN~TS27C64APORDERING INFORM
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ST27C256FN-ST27C256PBLOCK DIAGRAMVc
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ST27C256FN·ST27C256PAC TEST CONDIT
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ST27C256FN-ST27C256PPROGRAMMING CHA
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ST27C256FN·ST27C256PHIGH SPEED PRO
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ST27C256FN-ST27C256PORDERING INFORM
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SGS-1HOMSON~ ., L ~D©ffi1@rn[brn©
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M8571ELECTRICAL CHARACTERISTICS (0
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M8571S-BUS DESCRIPTION (Continued)A
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M8571S·BUS INTERFACEThe serial, 3-
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M8571MASTER. READS AFTER SETTING WO
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M8571ORDERING INFORMATIONPort Numbe
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M9306BLOCK DIAGRAM00DI---+-+-+-+---
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M93D6FUNCTIONAL DESCRIPTIONThe inpu
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M9306ORDERING INFORMATIONPart Numbe
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M9346BLOCK DIAGRAMDl~-r------------
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M9346FUNCTIONAL DESCRIPTIONThe inpu
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M9346INSTRUCTION SETInstruction S8
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M9346TIMING DIAGRAMS (Continued)INS
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EEPROM DEVICESCMOS EEPROM227
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ST24C02BLOCK DIAGRAMseL--~~--~-----
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ST24C02FIG. 2A· DATA TRANSFER SEQU
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ST24C02ELECTRICAL CHARACTERISTICSAC
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ST24C02FIG. 4A· PAGE WRITEBUS ACTI
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TS59C111 K BIT SERIAL CMOS EEPROM
Page 242 and 243:
TS59C11READ OPERATIONDC CHARACTERIS
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TS59C11The READ instruction is the
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TS59C11FIG. 5b - ERAL (Erase all) M
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~ SGS-1HOMSONIt.. ~ L [j\I'A]O©OO@
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TS93C46READ OPERATIONDC CHARACTERIS
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TS93C46INSTRUCTION TIMINGSREADSK ~u
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~TS93C46ORDERING INFORMATIONPart Nu
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ST93C56BLOCK DIAGRAMPROTECTREGISTER
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M2316H16K-BIT READ ONLY MEMORY• S
Page 262 and 263:
M2316HSTATIC ELECTRICAL CHARACTERIS
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M2332M233332K-BIT READ ONLY MEMORY
Page 266 and 267:
M2332/M2333DC AND OPERATING CHARACT
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~ SGS-11I0MSONA., L ~D©[Ri@~[lJ~©
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M2364DC AND OPERATING CHARACTERISTI
Page 272 and 273: M236564K-BIT READ ONLY MEMORY• PI
Page 274 and 275: M2365DC AND OPERATING CHARACTERISTI
Page 276: STATIC RAM DEVICES275
Page 279 and 280: MK48Z02N2(B)-12115/20/25DESCRIPTION
Page 281 and 282: MK48Z02112(B)-12115/20/25WRITE MODE
Page 283 and 284: MK48Z02/12(B)-12/15/20/25FIGURE 6.
Page 285 and 286: MK48Z02/12(B)-12/15/20/25FIGURE 7.
Page 287 and 288: MK48Z02112(B}-12115/20/25AC TEST CO
Page 290 and 291: MK48C02A/12A(K, N)·15/20/252K x 8
Page 292 and 293: MK48C02AI12A(K,N)-15/20/25OPERATION
Page 294 and 295: MK48C02A/12A(K, N)-15/20/25DATA RET
Page 296 and 297: MK48C02A112A(K,N)-15/20/25FIGURE 6.
Page 298 and 299: MK48C02A112A(K,N)-15/20/25AC TEST C
Page 300 and 301: MK48T02/12(B)-12/15120/252K x 8 ZER
Page 302 and 303: MK48T02/12(B)-12/15/20/25OPERATIONR
Page 304 and 305: MK48T02N 2(8)-12/15/20/25CLOCK OPER
Page 306 and 307: MK48T02112(B)-12/15/20/25The FT bit
Page 308 and 309: MK48T02112(B)-12115/20/25PREDICTING
Page 310 and 311: MK48T02112(B)-12/15/20/25~redlctlng
Page 312 and 313: MK48TD2/12(B)-12115/20/25ABSOWTE MA
Page 314 and 315: M K48Z08/18/09/19(B)·15/201258K x
Page 316 and 317: MK48Z08/18/09/19(B)-15/20/25OPERATI
Page 319 and 320: MK48Z08118/09/19(B)-15/20/25AC ELEC
Page 321: MK48Z08118/09119(B)-15/20/25DATA RE
Page 325 and 326: MK48Z08/18/09/19(B)-15/20/25PACKAGE
Page 327 and 328: MKI48Z02112(B)-15/20/25DESCRIPTIONT
Page 329 and 330: M KI48Z02112(B)-15/20J25WRITE MODET
Page 331 and 332: MKI48Z02/12(B.)-15/20/25FIGURE.6. P
Page 333 and 334: MKI48Z02/12(B)-15/20/25FIGURE 7. MK
Page 335 and 336: MKI48Z02112(B)-1S/20/2SAC TEST COND
Page 338 and 339: ~ SGS-THOMSON..""! L ~o©oo@rn[!J~
Page 340 and 341: MK48T08 (8)-10/12/15/20READ MODEThe
Page 342 and 343: MK48T08 (8)-10/12/15/20AC ELECTRICA
Page 344 and 345: MK48T08 (8)-10/12/15/20CLOCK OPERAT
Page 346 and 347: MK48T08 (B)-10112/15/20FIGURE 8. FR
Page 348 and 349: MK48T08 (8)-10/12/15/20rhe t 10/0 f
Page 350: MK48T08 (8)-10/12/15/20PACKAGE DESC
Page 354: STATIC RAM DEVICESCACHE TAG RAM353
Page 357 and 358: MK41 HSO(N, P)-20/25/35FIGURE 2. CO
Page 359 and 360: MK41H80(N,P)-20/25/35APPLICATIONThe
Page 361 and 362: MK41H80(N,P)-20/25/35ABSOWTE MAXIMU
Page 363 and 364: MK41 H80(N ,P)-20/25/35NORMALIZED D
Page 365 and 366: MK41H8O(N,P),-2OI2513522 PIN "P" PA
Page 367 and 368: MK4202(Q)-20TRUTH TABLERS S E WHi -
Page 369 and 370: MK4202(Q)-20DEVICE DESCRIPTION AND
Page 371 and 372: MK4202(Q)-20READ MODEThe MK4202 is
Page 373 and 374:
MK4202(Q)-20COMPARE CYCLE TIMINGEle
Page 375 and 376:
MK4202(Q)-20FIGURE 5. W WRITE CYCLE
Page 377 and 378:
MK4202(Q)-20FIGURE 10. CHIP SELECT
Page 379 and 380:
MK4202(Q)-20FIGURE 15. LATE WRITE·
Page 381 and 382:
MK4202(Q)-20FIGURE 21. RESET CYCLEr
Page 383 and 384:
MK4202(Q)-20AC TEST CONDITIONSInput
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MK48H74(N,P,E)·35/45/55DESCRIPTION
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MK48H74(N,P,E)-35/45/55WRITE MODETh
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MK48H74(N, P, E)-35/45/S5COMPARE MO
Page 391 and 392:
MK48H74(N,P,E)-35/45/55APPLICATIONT
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MK48H74(N,P,E)-35/45/55AC TEST COND
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STATIC RAM DEVICESFIFO395
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MK4501(N,K)-65/80/10112115/20a rate
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MK4501 (N, K)-65/80/1 0112/15/20REA
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MK4501 (N, K)-65/80/10/12/15/20RESE
Page 405 and 406:
M K4501(N, K)-65/80110/12115/20SING
Page 407 and 408:
MK4501(N,K)-65/80110112/15/20EXPANS
Page 409 and 410:
MK4501(N, K)-65/80110/12/15/20COMPO
Page 411 and 412:
MK4501 (N, K)-65/80110112115/20FIGU
Page 414 and 415:
~ SGS-1HOMSON,."'! I. ~u©oo@rn[brn
Page 416 and 417:
MK4503(N,K)-50/65/80/10/12/15/20WRI
Page 418 and 419:
MK4S03(N ,K)-SO/6S/80/1 0/12/1S/20F
Page 420 and 421:
MK4503(N ,K)-50/65/80110112/15/20RE
Page 422 and 423:
MK4S03(N, K)-S0/6S/80110112/1S/20HA
Page 424 and 425:
MK4S03(N ,K)-SO/6S/80110112I1S/20EX
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MK4503(N, K)-50/65/80/10112/15/20CO
Page 428 and 429:
MK4S03(N, K)-SO/6S/80/1 0/1211 S/20
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MK4511(N,K)-12/15/20512 x 8 CMOS Bi
Page 432 and 433:
MK4511(N,K)-12115/20READ MODEThe MK
Page 434 and 435:
MK4511(N,K)-12115/20DUAL PORT OPERA
Page 436 and 437:
MK4511 (N,K)-12115/20IMPLEMENTATION
Page 438 and 439:
MK4511(N,K)-12/15/20ABSOWTE MAXIMUM
Page 440:
MK4511(N,K)-12115/20FIGURE 11. MK45
Page 443 and 444:
M K4505M/4505S(N)-25/33/50DESCRIPTI
Page 445 and 446:
MK4505M/4505S(N)-25/33/50AC ELECTRI
Page 447 and 448:
MK4505M/4505S(N)-25/33/50FIGURE S.
Page 449 and 450:
M K4505M/4505S(N)-25/33/50FIGURE 9.
Page 451 and 452:
MK4505M/4505S(N)-25/33/50SIMULTANEO
Page 453 and 454:
MK4505M/4505S{N)-25/33/50FIGURE 13.
Page 455 and 456:
MK4505M/4505S(N)-25/33/50ABSOWTE MA
Page 457 and 458:
MK4S0SM/4S0SS(N)-2S/33/S020 PIN uN"
Page 459 and 460:
MK4S264/4S26S(N)-SS/70FIGURE 2. DEV
Page 461 and 462:
MK45264/45265(N)-55nOAC ELECTRICAL
Page 463 and 464:
MK45264/45265(N)-55noReadlWriteThe
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MK45264/45265(N)-55noFIGURE 8. FULL
Page 467 and 468:
MK4S264/4S26S(N)-SSnoFIGURE 13. TRA
Page 469 and 470:
MK45264/45265(N)-55noFIGURE 18. WRI
Page 471 and 472:
MK4S264/4S26S(N)-SSI7OAC TEST CONDI
Page 473 and 474:
MK45264/45265(~)-5snoWidth Expansio
Page 475 and 476:
MK45264/45265(N)-55noORDERING INFOR
Page 478 and 479:
MK41H661M K41 H67(N, P)-20/25/3516K
Page 480 and 481:
MK41H66/MK41 H67(N, P)-20/25/35WRIT
Page 482 and 483:
MK41H66/MK41H67(N,P)-20/25135APPLIC
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MK41H66/MK41H67{N,P)-20/25/35NORMAL
Page 486 and 487:
MK41 H66/MK41 H67(N ,P)-20/25/35ORD
Page 488 and 489:
MK41H681MK41H69(N,P)-20/25/354K x 4
Page 490 and 491:
MK41 H68/MK41 H69(N, P)-20/25/35WRI
Page 492 and 493:
MK41H68/MK41 H69(N ,P)-20/25/35APPL
Page 494 and 495:
MK41 H68/MK41 H69(N ,P)-20/25/35NOR
Page 496 and 497:
MK41H68/MK41H69(N,P)-20/25/35ORDERI
Page 498 and 499:
t==' SGS-1HOMSON. ..,1. ~o©oo@rn[]
Page 500 and 501:
MK41 H79(N,P)·20125/35WRITE MODETh
Page 502 and 503:
MK41 H79(N, P)-20/25/35ITANDBY MODE
Page 504 and 505:
MK41 H79(N ,P)-20/25/35"C TEST COND
Page 506 and 507:
MK41H79(N,P)-20/25/35~ORMALIZED DC
Page 508 and 509:
MK41 H87(N)-25/35/4564K x 1 CMOS ST
Page 510 and 511:
MK41H87(N)-25/35/45WRITE MODEThe MK
Page 512 and 513:
MK41H87(N)-25/35/45STANDBY MODEThe
Page 514 and 515:
MK41 H87(N)-25/35/45AC TEST CONDITI
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.35, 45, 55, AND 70 ns ADDRESS ACCE
Page 518 and 519:
MK48H64/MK48H65(N,P)-35/45/55noREAD
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MK48H64/MK48H65(N,P)-35/45/55noWRIT
Page 522 and 523:
MK48H64/MK48H65(N,P)-35/45/55noABSO
Page 524:
SALES OFFICESAUSTRALIANSW 2027 EDGE
Page 527:
Information furnished is believed t
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