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Part-I - Controller General of Patents Designs and Trademarks

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(12) PATENT APPLICATION PUBLICATION (21) Application No.3072/MUM/2010 A<br />

(19) INDIA<br />

(22) Date <strong>of</strong> filing <strong>of</strong> Application :08/11/2010 (43) Publication Date : 21/06/2013<br />

(54) Title <strong>of</strong> the invention : LOW COST AND LARGE AREA CHEMICAL DEPOSITION OF CZTS THIN FILM<br />

(51) International classification<br />

(31) Priority Document No :NA<br />

(32) Priority Date :NA<br />

(33) Name <strong>of</strong> priority country :NA<br />

(86) International Application No<br />

:NA<br />

Filing Date<br />

:NA<br />

(87) International Publication No :N/A<br />

(61) Patent <strong>of</strong> Addition to Application Number :NA<br />

Filing Date<br />

:NA<br />

(62) Divisional to Application Number<br />

:NA<br />

Filing Date<br />

:NA<br />

:C30B25/00;<br />

C01G3/00<br />

(71)Name <strong>of</strong> Applicant :<br />

1)PROF. CHANDRAKANT DNYANDEV LOKHANDE<br />

Address <strong>of</strong> Applicant :THIN FILM PHYSICS<br />

LABORATORY, DEPARTMENT OF PHYSICS, SHIVAJI<br />

UNIVERSITY, KOLHAPUR, 416 004 Maharashtra India<br />

(72)Name <strong>of</strong> Inventor :<br />

1)PRO. CHANDRAKANT DNYANDEV LOKHANDE<br />

2)MR. NANASAHEB MADHUKAR SHINDE<br />

3)MR. DEEPAK PRAKASH DUBAL<br />

(57) Abstract :<br />

The present investigation is related to the preparation <strong>of</strong> large area (>10 cm2) polycrystalline <strong>and</strong> cubic Cu2ZnSnS4 (CZTS) by<br />

low cost chemical bath deposition(CBD) method from the basic bath at several temperature by using CuS04, ZnS04, SnCl4<br />

,Na2S203 <strong>and</strong> complexing agent ammonia <strong>and</strong> hydrazine hydride respectively. As confirmed from X-ray diffraction pattern <strong>and</strong><br />

SEM images, Cu2ZnSnS4 (CZTS) films were poly crystalline nature with preferred growth along (110) plane with tetragonal<br />

crystal structure. The SEM image showed that the cubes are immerged in to each other forming highly compact morphology <strong>of</strong><br />

Cu2ZnSnS4 (CZTS) thin films. The electrical resistivity showed semiconducting electrical behavior.<br />

No. <strong>of</strong> Pages : 13 No. <strong>of</strong> Claims : 8<br />

The Patent Office Journal 21/06/2013 13537

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