Part-I - Controller General of Patents Designs and Trademarks

(12) PATENT APPLICATION PUBLICATION (21) Application No.3073/MUM/2010 A
(19) INDIA
(22) Date of filing of Application :08/11/2010 (43) Publication Date : 21/06/2013
(54) Title of the invention : ROOM TEMPERATURE CHEMICAL METHOD FOR THE SYNTHESIS OF CU2ZNSNS4
ABSORBING LAYER
(51) International classification
(31) Priority Document No :NA
(32) Priority Date :NA
(33) Name of priority country :NA
(86) International Application No
:NA
Filing Date
:NA
(87) International Publication No : NA
(61) Patent of Addition to Application Number :NA
Filing Date
:NA
(62) Divisional to Application Number
:NA
Filing Date
:NA
:C01G19/00;
C01G3/00
(71)Name of Applicant :
1)PROF. CHANDRAKANT DNYANDEV LOKHANDE
Address of Applicant :THIN FILM PHYSICS
LABORATORY, DEPARTMENT OF PHYSICS, SHIVAJI
UNIVERSITY, KOLHAPUR 416 004 Maharashtra India
(72)Name of Inventor :
1)PROF. CHANDRAKANT DNYANDEV LOKHANDE
2)NANSAHEB MADHUKAR SHINDE
3)DEEPAK PRAKASH DUBAL
(57) Abstract :
The present investigation is related to the preparation of polycrystalline and compact Cu2ZnSnS4 (CZTS) thin films onto glass
substrates by successive ionic layer adsorption and reaction (SILAR) method. This is relatively less expensive and convenient for
large area deposition of metal chalcogenide thin films. Polycrystalline Cu2ZnSnS4
(CZTS) films have been deposited onto the glass substrates at room temperature using CuS04, ZnS04 and SnS04 as cationic
precursors and C2H5NS as anionic precursor. As confirmed from X-ray diffraction pattern and SEM images, Cu2ZnSnS4 (CZTS)
films were polycrystalline and compact with tetragonal crystal structure. The resistivity of Cu2ZnSnS4 (CZTS) film is of the order
of 10 Ω.cm. the Cu2ZnSnS4 (CZTS) film have optical absorption of the order of 104 cm1.
No. of Pages : 14 No. of Claims : 9
The Patent Office Journal 21/06/2013 13542