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Part-I - Controller General of Patents Designs and Trademarks

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(12) PATENT APPLICATION PUBLICATION (21) Application No.2054/CHE/2011 A<br />

(19) INDIA<br />

(22) Date <strong>of</strong> filing <strong>of</strong> Application :17/06/2011 (43) Publication Date : 21/06/2013<br />

(54) Title <strong>of</strong> the invention : HETROJUNCTION SINGLE ELECTRON TRANSISTOR DEVICE<br />

(51) International classification :H01J<br />

(31) Priority Document No :NA<br />

(32) Priority Date :NA<br />

(33) Name <strong>of</strong> priority country :NA<br />

(86) International Application No<br />

:NA<br />

Filing Date<br />

:NA<br />

(87) International Publication No : NA<br />

(61) Patent <strong>of</strong> Addition to Application Number :NA<br />

Filing Date<br />

:NA<br />

(62) Divisional to Application Number<br />

:NA<br />

Filing Date<br />

:NA<br />

(71)Name <strong>of</strong> Applicant :<br />

1)M. RAVINDIRAN<br />

Address <strong>of</strong> Applicant :NO. 5 AND 6/7, FIRST FLOOR,<br />

VINAYAK APARTMENTS, LAKSHMI AVENUE SCHOOL<br />

ROAD, KOLATHUR, CHENNAI 600 099 Tamil Nadu India<br />

2)DR. P. SHANKAR<br />

(72)Name <strong>of</strong> Inventor :<br />

1)M. RAVINDIRAN<br />

2)DR. P. SHANKAR<br />

(57) Abstract :<br />

A heterojunction single electron transistor device is disclosed, wherein, a layer <strong>of</strong> ferromagnetic material is disposed on the<br />

conductive isl<strong>and</strong> at at least one <strong>of</strong> the source junction or the drain junction. The device shows enhanced conductivity through<br />

lowering <strong>of</strong> the electron tunneling barrier due to electron spin coupling at the ferromagnetic layer.<br />

No. <strong>of</strong> Pages : 16 No. <strong>of</strong> Claims : 5<br />

The Patent Office Journal 21/06/2013 13987

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