Part-I - Controller General of Patents Designs and Trademarks

(12) PATENT APPLICATION PUBLICATION (21) Application No.1636/CHE/2012 A
(19) INDIA
(22) Date of filing of Application :25/04/2012 (43) Publication Date : 21/06/2013
(54) Title of the invention : NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF
MANUFACTURING THE SAME
(51) International classification
:H01L (71)Name of Applicant :
33/00 1)NICHIA CORPORATION
(31) Priority Document No
:2011- Address of Applicant :491-100, OKA, KAMINAKA-CHO,
098851 ANAN-SHI, TOKUSHIMA 774-8601 Japan
(32) Priority Date :27/04/2011 (72)Name of Inventor :
(33) Name of priority country :Japan 1)YONEDA, AKINORI
(86) International Application No
Filing Date
:NA
:NA
2)KAWAGUCHI, HIROFUMI
3)DEGUCHI, KOUICHIROH
(87) International Publication No : NA
(61) Patent of Addition to Application Number
Filing Date
:NA
:NA
(62) Divisional to Application Number
Filing Date
:NA
:NA
(57) Abstract :
To provide a reliable nitride semiconductor light emitting element having a thick metal bump and a method of manufacturing the
nitride semiconductor light emitting element with an improved productivity, the manufacturing method of a flip-chip nitride
semiconductor light emitting element including: a nitride semiconductor light emitting element structure having an n-type nitride
semiconductor layer and a p-type nitride semiconductor layer, which are laminated on a substrate, and an n-side electrode
connecting surface for connecting an n-side electrode to the n-type nitride semiconductor layer and a p-side electrode connecting
surface for connecting a p-side electrode to the p-type nitride semiconductor layer on the same plane side of the substrate, the n-
side electrode being connected to the n-side electrode connecting surface and the p-side electrode being connected to the p-side
electrode connecting surface; and metal bumps formed on the n-side electrode and the p-side electrode, wherein a protective layer
forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, a second resist
pattern forming step, a second metal layer forming step and a resist pattern removing step are sequentially performed.
No. of Pages : 171 No. of Claims : 13
The Patent Office Journal 21/06/2013 13951