Ion Implantation and Synthesis of Materials - Studium

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90 7 Displacements and Radiation Damage#/cm 3 /Ions/cm 2 (×10 8 )4.5 -Si Displacement4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -.5 -0-0 100 200 300400500Target Depth (Angstrom)Fig. 7.7. Distribution of displaced Si atoms as a function of depth for 40 keV Sb in Si(Monte Carlo SRIM simulation)Ion RangeStraggle= 285 Å= 80 Å40 keV Sb in Si(Atom/cm 3 ) (Ion/cm 2 ) (x10 5 )/4540353025201510500 100 200 300400500Target Depth (Angstrom)Fig. 7.8. The ion implantation range distribution for 40 keV Sb in Si (from Monte CarloSRIM simulation)
Problems 91ReferencesBrinkman, J.A.: Production of atomic displacements by high-energy particles. Am. J. Phys.24, 246 (1956)Davies, J.A.: Collision cascades and spike effects. In: Poate, J.M. Foti, G., Jacobson, D.C.(eds.) Surface Modification and Alloying by Laser, Ion, and Electron Beams, pp. 189–210. Plenum, New York (1983)Haines, E.L., Whitehead, A.B.: Pulse height defect and energy dispersion in semiconductordetectors. Rev. Sci. Instrum. 37, 190 (1966)Kinchin, G.H., Pease, R.S.: The displacement of atoms in solids by radiation. Rept. Prog.Phys. 18, 1 (1955)Mayer, J.W., Erikson, L., Davies, J.A.: Ion Implantation in Semiconductors. Academic,New York (1970) (spelled Davies other places)Robinson, M.T.: The influence of the scattering law on the radiation damage displacecascade. Phil. Mag. 12, 741 (1965)Sigmund, P.: Energy density and time constant of heavy-ion-induced elastic-collisionspikes in solids. Appl. Phys. Lett. 25, 169 (1974)Thompson M.W.: Defects and Radiation Damage in Metals. Cambridge University Press,Cambridge (1969)Suggested ReadingAverback, R.S., Kirk, M.A.: Atomic displacement processes in ion-irradiated materials. In:Rhen, L.E., Picraux, S.T., Wiedersich, H. (eds.) Surface Alloying by Ion, Electron, andLaser Beams, p. 91. American Society for Metals, Metals Park, (1987)Nastasi, M., Mayer, J.W., Hirvonen, J.: Ion-solid interaction fundamentals and applications,Cambridge University Press (1996)Thompson, M.W.: Defects and Radiation Damage in Metals, Cambridge University Press,(1969)Problems7.1 Using Fig. 7.3, determine the PKA energies where (7.4) is valid for C, Al,and Au?7.2 Using the results from Problem 7.1, calculate 〈N d (E)〉 assuming E d =24 eV, 27 eV, and 43 eV for C, Al, and Au, respectively.7.3 Using (7.10)(a) Calculate the damage energy for a 3 keV self-ion Si PKA.(b) What is the damage energy predicted from Fig. 7.3?7.4 For 50 keV B, P, As, and Sb ions incident Si, find the approximate valueof dpa, (7.10), for doses of 5 × 10 13 and 5 × 10 15 ions cm −2 .
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109: 98 8 ChannelingThe channeling effec
Page 110 and 111: 100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
Page 138 and 139: 128 10 Crystallization and Regrowth
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140 10 Crystallization and Regrowth
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142 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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