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Ion Implantation and Synthesis of Materials - Studium

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13.2 Ballistic Mixing 18513.2.2 Cascade MixingIn addition to recoil mixing, other ballistic phenomena are possible during ionirradiation <strong>and</strong> implantation. For example, enhanced atomic mixing can occurwhen multiple displacements <strong>of</strong> target atoms result from a single incident ion. Inthe multiple displacement process, an initially displaced target atom (primaryrecoil) continues the knock-on-atom processes, producing secondary recoil atomdisplacements which in turn displace additional atoms. The multiple displacementsequence <strong>of</strong> collision events is commonly referred to as a collision cascade.Unlike the highly directed recoil implantation process, in which one atomreceives a large amount <strong>of</strong> kinetic energy in a single displacement, atoms in acollision cascade undergo many multiple uncorrelated low-energy displacement<strong>and</strong> relocation events. Atomic mixing resulting from a series <strong>of</strong> uncorrelated lowenergyatomic displacements is referred to as cascade mixing.The ballistic interactions <strong>of</strong> an energetic ion with a solid are shownschematically in Fig. 13.6. The figure shows sputtering events at the surface,single-ion/single-atom recoil events, <strong>and</strong> the development <strong>of</strong> a collision cascadethat involves many low-energy displaced atoms. The cascade is shown in the earlydisplacement stage <strong>of</strong> development, where the displaced atoms occupy interstitialpositions surrounding a core <strong>of</strong> vacant lattice sites.Ballistic ProcessesSputteringRecoil<strong>Implantation</strong>DisplacementSolidCascadeNormal atomInterstitial atomIncident ionFig. 13.6. The ballistic interactions <strong>of</strong> an energetic ion with a solid. Graphically displayedare sputtering events at the surface, single-ion/single-atom recoil events, the development<strong>of</strong> a collision cascade that involves a large number <strong>of</strong> low-energy displaced atoms, <strong>and</strong> theion implantation <strong>of</strong> the incident ion

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