Ion Implantation and Synthesis of Materials - Studium

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150 11 Si Slicing and Layer Transfer: Ion-Cut765SRIM Simulation, 175 keV H into SiDisplaced silicon atoms (×10)Hydrogen concentrationAtomic %432100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0Depth (µm)Fig. 11.4. SRIM Monte Carlo calculation of the H concentration distribution and theimplantation-induced damage distribution in silicon after a 175 keV H ion implantation to adose of 5 × 10 16 cm −21421 cm −3 )1210DisplacedSi Atom oms (10864201.2 1.3 1.4 1.5 1.6Deptpth (µm)Fig. 11.5. The damage depth distribution obtained from an analysis of ion channeling data
11.4 The Mechanisms Behind the Ion-Cut Process 151a number of techniques. Figure 11.7 shows a high resolution scanning electronmicroscopy (SEM) cross-section image of the exfoliated layer. The image showsthe roughness of the surface, where the Ion-Cut occurred, to be quite small. Alsovisible is the 75 nm thick silicon oxide layer beneath the bond interface. The largearea analysis possible with SEM reveals a uniform thickness of the exfoliatedlayer and consequently a smooth cut of the H-implanted silicon crystal. The SEMdeterminedthickness of the exfoliated layer is measured to be 1.42 µm. A surfaceheight analysis using atomic force microscopy (AFM) shows the transferred layerto be 1.40 µm thick. Examination of the exfoliated layer by means of cross-sectiontransmission electron microscopy (XTEM) measures the thickness of thetransferred layer as 1.42 µm.Figure 11.8 combines all the data mentioned above. The H concentration and Silattice damage distributions are superimposed. The dashed vertical lines in thefigure represent the range in the Ion-Cut location determined by XSEM, AFM andXTEM. This data clearly shows that the Ion-Cut occurs at the region of highestimplantation damage rather than at the H concentration peak. To understand whythe Ion-Cut depth is correlated with the ion implantation damage requires a closerexamination of the nature of the damage.4Hydrogen concentration (at %)32101.0 1.2 1.4 1.6 1.8 2.0Depth (µm)Fig. 11.6. The H concentration depth distribution obtained from an ERD analysis on thesilicon sample implanted with 175 keV protons to a dose of 5 × 10 16 H cm 2
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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Page 118 and 119: 108 9 Doping, Diffusion and Defects
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200 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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