Ion Implantation and Synthesis of Materials - Studium

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260 Indexrepulsive 14restoring 13forward bias 107Frenkel-defect 78functiondisplacement damage 79Kinchin-Pease damage 81function screening 16Bohr 17Lenz-Jensen 17Lindhard 17Moliere 17Sommerfeld asymptotic 17Gate implant 207gate dielectric material 207gate length 194Gaussian range distribution 66grain boundaries 117Halo implant 200, 206, 214high current beamlines 216high current implantation 214high dose ion implantation 169high energy electronic stopping 57high energy beamlines 219high energy implantation 214Hook’s law 14hot electron effects 193, 198, 205hydrogen ion implantation 144Impact parameter 32, 39, 101ion dose 1interatomicCoulomb interaction 11forces 11, 13separation equilibrium 13interatomic potential 11, 13Lennard-Jones 13, 15interfacecrystal-amorphous 131interdiffusion coefficient 181intermixing 179ion beam mixing 179ballistic 180, 182cascade 180, 185cohesive energy 189de-mixing 188effective mixing parameter 184heat of mixing 187recoil 183thermodynamic effect 187temperature-dependent 182temperature-independent 182ion-cut 143depth 149mechanisms 149microstructure 153ion implanters 215CMOS processing 214commercialization 230contamination 215control systems 222high vacuum systems 222high-voltage supplies 222ion implantation 63alloy 71channeling 93concentration 67future 236high dose 169hydrogen in silicon 145molecular 226recoil 183self 129sputtering 159ion-solid simulationsMonte Carlo 72ion stopping 49irradiation-enhanced diffusion 124Joule 6Junctionsdeeper 97shallow 97Kinchin-Peasefunction 79–80modified function 81kinematicselastic collisions 25Laboratory coordinates 26laboratory scattering angle 29laser annealing 140latchup 198, 202lateral spreading of dopants 195latticedisorder 94parameter 5
Index 261layer transfer 143Lennard-Jonesinteratomic potential 13lifetime spike 88linac accelerators 219Lindhard,screening function 17Lindhard-Scharffelectronic stopping 60lightly-doped drain 197, 205linear cascade sputtering 160long-range interatomic force 12low energy electronic stopping 58Massreduced 28number 7materials integration 143mean free path 86medium current beamlines 218medium current implantation 214mixing enthalpy 180modulus, elastic 23molecular implantation 226momentum, conservation 25monolayer 6Monte Carlodpa 91ion-solid simulations 72Moore’s Law 193, 213MOSFET 110motion, central force 30Nearest-neighbor spacing 13neutron 8nuclearcollisions 50cross-section 51nuclear stoppingchanneling 97power law 48cross-section 51ZBL cross-section 54nucleusradius 9nuclides 7numberatomic 2mass 7Orbital angular momentum 32Path, mean free 86Pauli exclusion principle 12, 15planar densities 5Planck’s constant 91p-n junction 107polyatomic materialsrange 71sputtering 164polycrystalline 3potentialcentral force 11interatomic 13mean ionization 57minimum energy 13screened Coulomb 15unscreened Coulomb 101particle, alpha 8preferential sputtering 165primary knock-onatom (PKA) 77damage energy 81displacements produced by 79projected range 2, 63calculation 60distribution 65straggling 65proton 8punch through effect 195punch-through-stop 200, 203Radial range 65radiation-damage 77radiation-enhanced diffusion 124radiusBohr 9nucleus 9screening 19random-walkcollision cascade 186diffusion 186range 2, 63calculations 60–72channeling 94distributions 2, 65polyatomic targets 70projected 2, 63, 68radial 64spreading 64SRIM 72straggling 2, 65, 70
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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Page 220 and 221: 210 14 Application of Ion Implantat
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269: Index 259differential cross-section
Page 273: Index 263thermodynamiceffect ion be
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Ion Implantation and Synthesis of Materials - Studium

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