Ion Implantation and Synthesis of Materials - Studium

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10 1 General Features and Fundamental Concepts(b) Calculate the average areal density using (1.5)(c) What is the atomic volume?1.2 For the canonical value of 10 15 atoms cm −2 in a monolayer on a cubiccrystal, estimate(a) The bulk density(b) The volume Ω V occupied by an atom1.3 Nickel is a face-centered-cubic metal with an atomic density of 9.14 ×10 22 atoms cm −3 , an atomic weight of 8.7, and density of 8.91 g cm −3(a) What is the lattice parameter, a c , and the atomic volume, Ω V ?1.4 Silicon has a diamond cubic lattice structure with an atomic density of5 × 10 22 atoms cm −3 , an atomic weight of 28.09 and a density of 2.33 g cm −3(a) What are silicon’s lattice parameter and atomic volume, Ω V ?1.5 Calculate the energy in eV of a proton moving at the Bohr velocity. Whatis the velocity of a 35 keV A s ion?
2 Particle Interactions2.1 IntroductionThe manner in which the potential energy of a two-particle system varies with thedistance separating the two centers determines both the equilibrium properties ofan assembly of atoms and the way that energetic particles interact with a lattice ofstationary atoms. The scattering probability of an ion–atom collision is intimatelyrelated to the interaction forces between atoms.2.2 Interatomic ForcesWe start our discussion with the concept that atoms are comprised of a central nucleusand orbital electrons, and we consider the forces when one atom interactswith another atom. The nucleus is effectively a solid body of diameter ∼10−12 cmwith a positive charge, Z, which is dependent on the number of protons present. Ifthere were no orbital electrons, the force between two nuclei separated by a distancer would be Coulombic, of the form21 2Fr () = Z Ze ,2r(2.1)where Z 1 and Z 2 are the numbers of protons contained in the nucleus, ande 2 = 1.44 eV nm (1.8).For most purposes, the force between two atoms is expressed in terms of aninteratomic potential, which depends primarily on the separation, r, between theatoms or other charged particles. If the dependence of the potential on other coordinatesis neglected (central force approximation), then the force, F(r), and thepotential, V(r), are related bydF( r) =− [ V( r)].dr(2.2)11
Page 2 and 3: M. Nastasi J.W. MayerIon Implantati
Page 4 and 5: To our loved ones
Page 7 and 8: xContents4 Cross-Section ..........
Page 10 and 11: Contentsxiii14.3.2 Punch-Through St
Page 12 and 13: 2 1 General Features and Fundamenta
Page 22 and 23: 12 2 Particle InteractionsThe restr
Page 24 and 25: 142 Particle Interactions(a)V(r)r 0
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Page 30 and 31: 202 Particle Interactionsa0.8853a0L
Page 33 and 34: 3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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Ion Implantation and Synthesis of Materials - Studium

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