Ion Implantation and Synthesis of Materials - Studium

More documents

Recommendations

Info

254 Table of the elementselement atomicnumber(Z)isotopicmass(amu)relativeabundance238.0400 99.2745atomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )Np 93 237.0482 100 237.0482 5.18 × 10 22 20.4Pu 94 244.0642 100 (244) 4.89 × 10 22 19.8Am 95 243.0614 100 (243) 3.37 × 10 22 13.6Parentheses indicate estimated values of atomic weightsData taken from Nuclides and Isotopes, 14th edn., revised 1989 (General Electric Co., SanJose, California)
Appendix BPhysical constants, conversions, and usefulcombinationsphysical constantsacceleration due to gravityatomic mass unitAvogadro’s constantBoltzmann’s constantCoulomb’s constantelectron masselementary chargepermittivity (free space)Planck’s constantspeed of lightg = 98 dyne g −1 = 9.81 m s −2u = 1.6606 × 10 −27 kgN A = 6.022 × 10 23 particles mol −1k = 8.617 × 10 −5 eV K −1= 1.38 × 10 −23 J K −1k c = 8.988 × 10 9 N m 2 C −2m e = 9.1095 × 10 −31 kgE = 1.602 × 10 −19 Cε 0 = 8.85 × 10 −14 F cm −1h = 4.136 × 10 −15 eV s= 6.626 × 10 −34 J sc = 2.998 × 10 10 cm s −1useful combinationsCoulomb’s constantk c e 2 = 1.44 eV nmpermittivity (free space) ε 0 = 55.3 e/V µmpermittivity (Si)ε = ε r ε 0 = 1.05 × 10 −12 F cm −1photon energy E = 1.24 eV at λ = 1 µmthermal energy (300 K)kT = 0.0258 eV ≅ 1 eV/40Prefixesk = kilo = 10 3 ; M = mega = 10 6 ; G = giga = 10 9 ; T = tera = 10 12 ; m = milli= 10 −3 ; µ = micro = 10 −6 ; n = nano = 10 −9 ; p = pica = 10 −12symbols for unitsampère (A) coulomb (C); farad (F); gram (g); joule (J); kelvin (K); meter (m); newton (N);ohm (Ω); pascal (Pa); second (s); siemen (S); tesla (T); volt (V); watt (W); weber (Wb)
Page 2 and 3:
M. Nastasi J.W. MayerIon Implantati
Page 4 and 5:
To our loved ones
Page 7 and 8:
xContents4 Cross-Section ..........
Page 10 and 11:
Contentsxiii14.3.2 Punch-Through St
Page 12 and 13:
2 1 General Features and Fundamenta
Page 14 and 15:
Page 16 and 17:
Page 18 and 19:
Page 20 and 21:
10 1 General Features and Fundament
Page 22 and 23:
12 2 Particle InteractionsThe restr
Page 24 and 25:
142 Particle Interactions(a)V(r)r 0
Page 26 and 27:
162 Particle InteractionsHowever, a
Page 28 and 29:
182 Particle Interactionswhere the
Page 30 and 31:
202 Particle Interactionsa0.8853a0L
Page 33 and 34:
3 Dynamics of Binary Elastic Collis
Page 35 and 36:
3.3 Kinematics of Elastic Collision
Page 37 and 38:
3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40:
3.4 Center-of-Mass Coordinates 29an
Page 41 and 42:
3.5 Motion under a Central Force 31
Page 43 and 44:
3.5 Motion under a Central Force 33
Page 45 and 46:
Problems 35The reduced energy for 1
Page 47 and 48:
4 Cross-Section4.1 IntroductionIn C
Page 49 and 50:
4.2 Scattering Cross-Section 39unit
Page 51 and 52:
4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54:
4.3 Energy-Transfer Cross-Section 4
Page 55 and 56:
4.4 Approximation to the Energy-Tra
Page 57 and 58:
Problems 47ReferencesNastasi, M., M
Page 59 and 60:
5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62:
5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64:
5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66:
5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68:
5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70:
5.5 Electronic Stopping 59Table 5.1
Page 71:
Problems 61Problems5.1 Calculate th
Page 74 and 75:
64 6 Ion Range and Range Distributi
Page 76 and 77:
Page 78 and 79:
Page 80 and 81:
Page 82 and 83:
Page 84 and 85:
Page 86 and 87:
Page 88 and 89:
78 7 Displacements and Radiation Da
Page 90 and 91:
Page 92 and 93:
Page 94 and 95:
Page 96 and 97:
Page 98 and 99:
Page 100 and 101:
Page 102 and 103:
Page 104 and 105:
94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107:
96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109:
98 8 ChannelingThe channeling effec
Page 110 and 111:
100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113:
102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115:
104 8 ChannelingDechanneled fractio
Page 116 and 117:
106 8 ChannelingProblems8.1 Calcula
Page 118 and 119:
108 9 Doping, Diffusion and Defects
Page 120 and 121:
Page 122 and 123:
Page 124 and 125:
Page 126 and 127:
Page 128 and 129:
Page 130 and 131:
Page 132 and 133:
Page 134 and 135:
Page 136 and 137:
Page 138 and 139:
128 10 Crystallization and Regrowth
Page 140 and 141:
Page 142 and 143:
Page 144 and 145:
Page 146 and 147:
Page 148 and 149:
Page 150 and 151:
Page 152 and 153:
Page 154 and 155:
144 11 Si Slicing and Layer Transfe
Page 156 and 157:
Page 158 and 159:
Page 160 and 161:
Page 162 and 163:
Page 164 and 165:
Page 166 and 167:
Page 168 and 169:
Page 170 and 171:
160 12 Surface Erosion During Impla
Page 172 and 173:
Page 174 and 175:
Page 176 and 177:
Page 178 and 179:
Page 180 and 181:
Page 182 and 183:
Page 184 and 185:
Page 186 and 187:
Page 188 and 189:
Page 190 and 191:
180 13 Ion-Induced Atomic Intermixi
Page 192 and 193:
Page 194 and 195:
Page 196 and 197:
Page 198 and 199:
Page 200 and 201:
Page 202 and 203:
Page 204 and 205:
194 14 Application of Ion Implantat
Page 206 and 207:
Page 208 and 209:
Page 210 and 211:
Page 212 and 213:
Page 214 and 215: 204 14 Application of Ion Implantat
Page 223 and 224: 15 Ion Implantation in CMOS Technol
Page 225 and 226: 15.2 Implanters Used in CMOS Proces
Page 233 and 234: 15.3 Low Energy Productivity: Beam
Page 243 and 244: 15.5 Angle Control 233Fig. 15.13. O
Page 245 and 246: 15.5 Angle Control 235Fig. 15.15. I
Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 263: Appendix A 253element atomicnumber(
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
show all

Ion Implantation and Synthesis of Materials - Studium

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?