Ion Implantation and Synthesis of Materials - Studium

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252 Table <strong>of</strong> the elementselement atomic isotopicnumber mass(Z) (amu)relativeabundanceatomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )Os 76 183.9525 0.02 190.2 7.09 × 10 22 22.4185.9538 1.58186.9557 1.6187.9558 13.3188.9581 16.1189.9584 26.4191.9615 41.0Ir 77 190.9606 37.3 192.22 7.05 × 10 22 22.5192.9629 62.7Pt 78 189.9599 0.01 195.08 6.61 × 10 22 21.4191.9610 0.79193.9627 32.9194.9650 33.8195.9650 25.3197.9679 7.2Au 79 196.9666 100 196.96654 5.90 × 10 22 19.3Hg 80 195.9658 0.15 200.59 4.06 × 10 22 13.53197.9668 10.1198.9683 17.199.9683 23.1
Appendix A 253element atomicnumber(Z)isotopicmass(amu)200.9703 13.2relativeabundanceatomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )201.9706 29.65203.9735 6.8Tl 81 202.9723 29.524 204.3833 3.49 × 10 22 11.85204.9744 70.476Pb 82 203.9730 1.4 207.2 3.31 × 10 22 11.4205.9745 24.1206.9759 22.1207.9767 52.4Bi 83 208.9804 100 208.98037 2.82 × 10 22 9.8Po 84 208.9824 100 (209) 2.71 × 10 22 9.4At 85 210 100 (210)Rn 86 222.0176 100 (222) 2.69 × 10 22 9.91Fr 87 223 100 (223)Ra 88 226.0254 100 226.0254 1.33 × 10 22 5.Ac 89 227 100 227.0278 2.67 × 10 22 10.07Th 90 232.0381 100 232.0381 3.04 × 10 22 11.7Pa 91 231.0359 100 231.0359 4.01 × 10 22 15.4U 92 234.0410 0.0055 238.0289 4.78 × 10 22 18.9235.0439 0.7200
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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Page 212 and 213: 202 14 Application of Ion Implantat
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 261: Appendix A 251element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
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