Ion Implantation and Synthesis of Materials - Studium

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190 13 Ion-Induced Atomic Intermixing at the Interface: Ion Beam MixingK 1 = 0.0034 nm and K 2 = 27.4. The cohesive energy of the alloy system composedof elements A and B are approximated bycohAoABoB∆H ≅ ( X ∆ H + X ∆ H ) + ∆Hmix(13.11)where ∆H 0 are the cohesive energies of individual elements (see Kittel 1976), X isthe atomic fraction of the elements and ∆H mix alloy’s heat of mixing.Equation (13.10) is demonstrated in Fig. 13.8, which shows the experimentalmixing rate d(4 Dt 5/3 −2) / dφ(scaled by N HcohF D) versus the ratio ∆H mix /∆H coh .The linear relationship indicates that the amount of mixing scales with∆H mix /∆H coh and that (13.10) provides a reasonable prediction of the ion beammixing rate in metal/metal bilayer systems irradiated with heavy ions at lowtemperatures.Ballistic effects resulting from the early stages of cascade evolution are importantfactors in the ion mixing process, but materials properties, such as heat ofmixing and cohesive energy, also influence the process. Such material properties0.030N 5/3 (∆H coh ) 2F 2 (nm)Dexpd (4Dt)d φ0.0250.0200.015~Ag/Au0.010Zr/HfPd/Pt Cr/AuMo/WNb/Ta0.005Co/AuNi/PtRu/PtMo/PtCr/PtAg/HfMn/PtTi/AuV/PtRu/HfNb/PtZr/PtTi/PtPd/Hf0.000–0.05 0.00 0.05 0.10 0.15 0.20 0.25∆H mix /∆H cohFig. 13.8. Experimental mixing data showing a linear relationship between the mixing rateversus the ratio ∆H mix /∆H coh (after Cheng 1990)
Suggested Reading 191dominate the rate of mixing and the phase formation possibilities in the ionreactedlayers, influencing the final structures that form.ReferencesAndersen, H.H.: The depth resolution of sputter profiling. Appl. Phys. 18, 131 (1979)Cheng, Y.-T.: Thermodynamic and fractal geometric aspects of ion–solid interactions.Mater. Sci. Rep. 5, 45 (1990)Cheng, Y.-T., van Rossum, M. Nicolet, M-A., Johnson, W.L.: Influence of chemicaldriving forces in ion mixing of metallic bilayers. Appl. Phys. Lett. 45, 185 (1984)de Boer, F.R., Boom, R., Mattens, W.C.M., Miedema, A.R., Niessen, A.K.: Cohesion inMetals. North-Holland, Amsterdam (1989)Johnson, W.L., Cheng, Y.-T., Van Rossum, M., Nicolet, M-A.: When is thermodynamicsrelevant to ion-induced atomic rearrangements in metals? Nucl. Insrut. Meths. B7/8,657 (1985)Kittel, C.: Introduction to Solid State Physics, 5th edn. Wiley, New York (1976)Matteson, S., Paine, B.M., Grimaldi, M.G., Mezey, G., Nicolet, M.-A.: Ion beam mixing inamorphous silicon. I. Experimental investigation. Nucl. Instrum. Meths. 182/183, 43(1981)Mayer, J.W., Lau, S.S.: In: Poate, J.M., Foti, G., Jacobson, D.C. (eds.) ‘Ion Beam Mixing’,Surface Modification and Alloying by Laser, Ion, and Electron Beams, p. 241. Plenum,New York (1983)Mayer, J.W., Lau, S.S., Tsaur, B.Y., Poate, J.M., Hirvonen, J.K.: In: Preece, C.M.Hirvonen, J.K. (eds.) High-Dose Implantation and Ion-Beam Mixing, Ion ImplantationMetallurgy, p. 37. The Metallurgical Society of AIME, New York (1980)Sigmund, P., Gras-Marti, A.: Theoretical aspects of atomic mixing by ion beams. Nucl.Instrum. Meths. 182/183, 25 (1981)Tsaur, B.Y., Lau, S.S., Liau, Z.L., Mayer, J.W.: Ion-beam induced intermixing of surfacelayers. Thin Solid Films 63, 31 (1979)van der Weg, W.F., Sigurd, D., Mayer, J.W.: In: Picraux, S.T., EerNisse, E.P., Vook, F.L.(eds.) Ion Beam Induced Intermixing in the Pd/Si System, Applications of Ion Beamsto Metals, p. 209. Plenum Press, New York (1974)van Rossum, M., Shreter, U., Johnson, W.L., Nicolet, M-A.: Amorphization of thinmultilayer films by ion mixing and solid state amorphization. Mat. Res. Soc. Symp.Proc. 27, 127 (1984)Westendorp, H., Wang, Z.-L., Saris, F.W.: Ion-beam mixing of Cu–Au and Cu–W systems.Nucl. Instrum. Meths. 194, 543 (1982)Suggested ReadingAverback, R.S.: Fundamental aspects of ion beam mixing. Nucl. Instrum. Meths. B15, 675(1986)Besenbacher, F., Bottiger, J., Nielsen, S.K., Whitlow, H.J.: Short- and long-range ion-beammixing in Cu:Al. Appl. Phys. A29, 141 (1982)
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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Page 150 and 151: 140 10 Crystallization and Regrowth
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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