Ion Implantation and Synthesis of Materials - Studium

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202 Particle Interactionsa0.8853a0L=1/22/3 2/3( Z1 + Z2).(2.22)The screening lengths presented in (2.20)–(2.22) do not differ significantly fromeach other. In all cases the screening lengths scale approximately with Z 1/3 of thecolliding atoms.ReferencesBanerjea, A., Smith, J.R.: Origins of the universal binding-energy relation. Phys. Rev. B37, 6632 (1988)Mayer, J.W., Lau, S.S.: Electronic Materials Science: For Integrated Circuits in Si andGaAs. Macmillan Publishing Company, New York (1990)Rose, J.H., Smith, J.R., Ferrante, J.: Universal binding-energy curves for metals and Bimetallicinterfaces. Phys. Rev. Lett. 47, 675 (1981)Rose, J.H., Smith, J.R., Ferrante, J.: Universal features of bonding in metals. Phys. Rev. B28, 1835 (1983)Rose, J.H., Smith, J.R., Guines, F., Ferrante, J.: Universal features of the equation of stateof metals. Phys. Rev. B 29, 2963 (1984)Torrens, I.M.: Interatomic Potentials. Academic, New York (1972)Tu, K.-N., Mayer, J.W., Feldman, L.C.: Electronic Thin Film Science for Electrical Engineersand Materials Scientists. Macmillan Publishing Company, New York (1992)Wilson, W.D., Haggmark, L.G., Biersack, J.P.: Calculations of nuclear stopping, range andstraggling in the low-energy region. Phys. Rev. B 15, 2458 (1977)Ziegler, J.F., Biersack, J.P., Littmark, U.: The Stopping and Range of Ions in Solids. PergamonPress, New York (1985)Suggested ReadingBaker, E.B.: The application of the Fermi–Thomas statistical model to the calculation ofpotential distribution in positive ions. Phys. Rev. 36, 630 (1930)Eckstein, W.: Computer Simulation of Ion–Solid Interactions, chap. 4. Springer, BerlinHeidelberg New York (1991)Feldman, L.C., Mayer, J.W.: Fundamentals of Surface and Thin Film Analysis. North-Holland, New York (1986)Fermi, E.: Eine Statistische Methode zur Bestimmung einiger Eigenschaften des Atoms undihre Anwendung auf die Theorie des periodischen Systems der Elemente. Z. Phys. 48,73 (1928)
Problems 21Olander, D.R.: Fundamental Aspects of Nuclear Reactor Fuel Elements, chap. 17. TechnicalInformation Center Energy Research and Development Administration, Springfield(1976)Thomas, L.H.: The calculation of atomic fields. Proc. Cambridge Philos. Soc. 26, 542(1927)Torrens, I.M.: Interatomic Potentials. Academic, New York (1972)Ziegler, J.F., Biersack, J.P., Littmark, U.: The Stopping and Range of Ions in Solids. PergamonPress, New York (1985)Problems2.1 Calculate the Universal value of the screening function for boron (Z 1 = 15)and arsenic (Z 1 = 33) ions incident on Si (Z 2 = 14)2.2 Calculate the value of the Universal screening function χ(r/a) at values ofr/a U = 1 and 52.3 What are the values of a TF for B and As ions incident on Si?
Page 2 and 3: M. Nastasi J.W. MayerIon Implantati
Page 4 and 5: To our loved ones
Page 7 and 8: xContents4 Cross-Section ..........
Page 10 and 11: Contentsxiii14.3.2 Punch-Through St
Page 12 and 13: 2 1 General Features and Fundamenta
Page 20 and 21: 10 1 General Features and Fundament
Page 22 and 23: 12 2 Particle InteractionsThe restr
Page 24 and 25: 142 Particle Interactions(a)V(r)r 0
Page 26 and 27: 162 Particle InteractionsHowever, a
Page 28 and 29: 182 Particle Interactionswhere the
Page 33 and 34: 3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
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70 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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