Ion Implantation and Synthesis of Materials - Studium

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242 Table <strong>of</strong> the elementselement atomicnumber(Z)isotopicmass(amu)relativeabundanceatomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )Cr 24 49.9461 4.35 51.9961 8.33 × 10 22 7.1951.9405 83.7952.9407 9.553.9389 2.36Mn 25 54.9380 100 54.93805 8.14 × 10 22 7.43Fe 26 53.9396 4.35 55.847 8.44 × 10 22 7.8355.9349 83.7956.9354 9.557.9333 2.36Co 27 58.9332 100 58.9332 9.09 × 10 22 8.90Ni 28 57.9353 68.27 58.69 9.13 × 10 22 8.9059.9308 26.160.9311 1.1361.9283 3.5963.9280 0.91Cu 29 62.9296 69.17 63.546 8.49 × 10 22 8.9664.9278 30.83Zn 30 63.9291 48.6 65.39 6.58 × 10 22 7.1465.9260 27.966.9271 4.1
Appendix A 243element atomicnumber(Z)isotopicmass(amu)67.9248 18.8relativeabundanceatomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )69.9253 0.6Ga 31 68.9256 60.1 69.723 5.10 × 10 22 5.9170.9247 39.9Ge 32 69.9243 20.5 72.61 4.41 × 10 22 5.3271.9221 27.472.9235 7.873.9212 36.575.9214 7.8As 33 74.9216 100 74.92159 4.60 × 10 22 5.72Se 34 73.9225 0.9 78.96 3.66 × 10 22 4.8075.9192 9.076.9199 7.677.9173 23.579.9165 49.681.9167 9.4Br 35 78.9183 50.69 79.904 2.35 × 10 22 3.1280.9163 49.31Kr 36 77.9204 0.35 83.8 2.69 × 10 22 3.7479.9164 2.25
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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Page 202 and 203: 192 13 Ion-Induced Atomic Intermixi
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251: Appendix A 241elementatomicnumber(Z
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Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
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