Ion Implantation and Synthesis of Materials - Studium

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248 Table <strong>of</strong> the elementselement atomicnumber(Z)isotopicmass(amu)135.9072 8.90relativeabundanceatomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )Cs 55 132.9054 100 132.90543 8.47 × 10 21 1.87Ba 56 129.9063 0.106 137.327 1.53 × 10 22 3.5131.9050 0.101133.9045 2.417134.9057 6.592135.9046 7.854136.9058 11.230137.9052 71.700La 57 137.9071 0.09 138.9055 2.90 × 10 22 6.7138.9063 99.91Ce 58 135.9071 0.19 140.115 2.91 × 10 22 6.78137.9060 0.25139.9054 88.48141.9092 11.08Pr 59 140.9077 100 140.90765 2.89 × 10 22 6.77Nd 60 141.9077 27.13 144.24 2.92 × 10 22 7.00142.9098 12.18143.9101 23.80144.9126 8.30
Appendix A 249element atomicnumber(Z)isotopicmass(amu)relativeabundance145.9131 17.19atomic weight(amu)atomicdensity(atoms cm −3 )massdensity(g cm −3 )147.9169 5.76149.9209 5.64Pm 61 145 100 (145) 2.69 × 10 22 6.475Sm 62 143.9120 3.1 150.36 3.02 × 10 22 7.54146.9149 15.0147.9148 11.3148.9172 13.8149.9173 7.4151.9197 26.7153.9222 22.7Eu 63 150.9198 47.8 151.965 2.08 × 10 22 5.26152.9212 52.2Gd 64 151.9198 0.2 157.25 3.02 × 10 22 7.89153.9209 2.18154.9226 14.8155.9221 20.47156.9240 15.65157.9241 24.84159.9271 21.86
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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196 14 Application of Ion Implantat
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 257: Appendix A 247element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
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