Ion Implantation and Synthesis of Materials - Studium

More documents

Recommendations

Info

76 6 Ion Range and Range DistributiondE2 M1= 1.308 π aTFNZ1Z2e.dx M + M1 26.4 Using Fig. 6.4, determine R p and ∆R px for 50 keV As in Si. Compare yourresults to (6.13) and (6.14) and with values calculated by SRIM.
7 Displacements and Radiation Damage7.1 IntroductionAs we have shown in the preceding chapters, collisions between ions and targetatoms result in the slowing down of the ion, and the energy loss resulting fromnuclear stopping contributes significantly to determining the ion’s range. In ourdiscussion of range theory we have to consider how the nuclear energy lossescontribute to the energy dissipation of the ion. From our discussion of elasticcollisions we know that the energy loss by the ion is transferred to lattice atoms. Inthese collisions, sufficient energy may be transferred from the ion to displace anatom from its lattice site. Lattice atoms that are displaced by incident ions arecalled primary knock-on atoms or PKAs. The PKAs can in turn displace otheratoms, i.e., secondary knock-on atoms, tertiary knock-ons, etc., thus creating acascade of atomic collisions. This leads to a distribution of vacancies, interstitialatoms and other types of lattice disorder in the region around the ion track. As thenumber of ions incident on the crystal increases, the individual disordered regionsbegin to overlap. At some point, a heavily damaged layer is formed. The totalamount of disorder and the distribution in depth depend on ion species,temperature, energy, total dose and channeling effects.7.2 Radiation Damage and Displacement EnergyRadiation damage theories are based on the assumption that a lattice atom struckby an energetic ion or recoiling target atom must receive a minimum amount ofenergy in the collision to be displaced from its lattice site. The energy required todisplace the lattice atom represents the displacement threshold and is called thedisplacement energy, E d . If in the collision process the energy transfer to thelattice atom, T, is less than E d , the struck atom undergoes large amplitudevibrations without leaving its lattice position. The vibrational energy of the struckatom is quickly shared with nearest neighbors and appears as a localized source ofheat. If, however, T is greater than E d , the struck atom is able to move out of the77
Page 2 and 3:
M. Nastasi J.W. MayerIon Implantati
Page 4 and 5:
To our loved ones
Page 7 and 8:
xContents4 Cross-Section ..........
Page 10 and 11:
Contentsxiii14.3.2 Punch-Through St
Page 12 and 13:
2 1 General Features and Fundamenta
Page 14 and 15:
Page 16 and 17:
Page 18 and 19:
Page 20 and 21:
10 1 General Features and Fundament
Page 22 and 23:
12 2 Particle InteractionsThe restr
Page 24 and 25:
142 Particle Interactions(a)V(r)r 0
Page 26 and 27:
162 Particle InteractionsHowever, a
Page 28 and 29:
182 Particle Interactionswhere the
Page 30 and 31:
202 Particle Interactionsa0.8853a0L
Page 33 and 34:
3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109: 98 8 ChannelingThe channeling effec
Page 110 and 111: 100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
Page 136 and 137:
126 9 Doping, Diffusion and Defects
Page 138 and 139:
128 10 Crystallization and Regrowth
Page 140 and 141:
Page 142 and 143:
Page 144 and 145:
Page 146 and 147:
Page 148 and 149:
Page 150 and 151:
Page 152 and 153:
Page 154 and 155:
144 11 Si Slicing and Layer Transfe
Page 156 and 157:
Page 158 and 159:
Page 160 and 161:
Page 162 and 163:
Page 164 and 165:
Page 166 and 167:
Page 168 and 169:
Page 170 and 171:
160 12 Surface Erosion During Impla
Page 172 and 173:
Page 174 and 175:
Page 176 and 177:
Page 178 and 179:
Page 180 and 181:
Page 182 and 183:
Page 184 and 185:
Page 186 and 187:
Page 188 and 189:
Page 190 and 191:
180 13 Ion-Induced Atomic Intermixi
Page 192 and 193:
Page 194 and 195:
Page 196 and 197:
Page 198 and 199:
Page 200 and 201:
Page 202 and 203:
Page 204 and 205:
194 14 Application of Ion Implantat
Page 206 and 207:
Page 208 and 209:
Page 210 and 211:
Page 212 and 213:
Page 214 and 215:
Page 216 and 217:
Page 218 and 219:
Page 220 and 221:
Page 223 and 224:
15 Ion Implantation in CMOS Technol
Page 225 and 226:
15.2 Implanters Used in CMOS Proces
Page 227 and 228:
Page 229 and 230:
Page 231 and 232:
Page 233 and 234:
15.3 Low Energy Productivity: Beam
Page 235 and 236:
Page 237 and 238:
Page 239 and 240:
Page 241 and 242:
Page 243 and 244:
15.5 Angle Control 233Fig. 15.13. O
Page 245 and 246:
15.5 Angle Control 235Fig. 15.15. I
Page 247 and 248:
References 237No. of implants504540
Page 249 and 250:
Appendix ATable of the Elementselem
Page 251 and 252:
Appendix A 241elementatomicnumber(Z
Page 253 and 254:
Appendix A 243element atomicnumber(
Page 255 and 256:
Page 257 and 258:
Page 259 and 260:
Page 261 and 262:
Page 263 and 264:
Page 265 and 266:
Appendix BPhysical constants, conve
Page 267 and 268:
IndexAlpha particle 8amorphization
Page 269 and 270:
Index 259differential cross-section
Page 271 and 272:
Index 261layer transfer 143Lennard-
Page 273:
Index 263thermodynamiceffect ion be
show all

Ion Implantation and Synthesis of Materials - Studium

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?