- Page 2 and 3: M. Nastasi J.W. MayerIon Implantati
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- Page 7 and 8: xContents4 Cross-Section ..........
- Page 10 and 11: Contentsxiii14.3.2 Punch-Through St
- Page 12 and 13: 2 1 General Features and Fundamenta
- Page 14 and 15: 4 1 General Features and Fundamenta
- Page 16 and 17: 6 1 General Features and Fundamenta
- Page 18 and 19: 8 1 General Features and Fundamenta
- Page 20 and 21: 10 1 General Features and Fundament
- Page 22 and 23: 12 2 Particle InteractionsThe restr
- Page 24 and 25: 142 Particle Interactions(a)V(r)r 0
- Page 26 and 27: 162 Particle InteractionsHowever, a
- Page 28 and 29: 182 Particle Interactionswhere the
- Page 30 and 31: 202 Particle Interactionsa0.8853a0L
- Page 34 and 35: 24 3 Dynamics of Binary Elastic Col
- Page 36 and 37: 263 Dynamics of Binary Elastic Coll
- Page 38 and 39: 283 Dynamics of Binary Elastic Coll
- Page 40 and 41: 303 Dynamics of Binary Elastic Coll
- Page 42 and 43: 323 Dynamics of Binary Elastic Coll
- Page 44 and 45: 343 Dynamics of Binary Elastic Coll
- Page 46 and 47: 363 Dynamics of Binary Elastic Coll
- Page 48 and 49: 38 4 Cross-Section∆ϕzϕ∆θ cDe
- Page 50 and 51: 40 4 Cross-Sectionimpact parameters
- Page 52 and 53: 42 4 Cross-Section∫b π d σθ (
- Page 54 and 55: 44 4 Cross-Sectionsimilar to (4.11)
- Page 56 and 57: 46 4 Cross-SectionCmd σ ( E) = d T
- Page 58 and 59: 48 4 Cross-Section4.7 In Rutherford
- Page 60 and 61: 50 5 Ion Stopping5.2 The Energy-Los
- Page 62 and 63: 52 5 Ion Stoppingwhere E is the ene
- Page 64 and 65: 54 5 Ion Stopping5.4 ZBL Nuclear St
- Page 66 and 67: 56 5 Ion Stopping5.5 Electronic Sto
- Page 68 and 69: 58 5 Ion StoppingThe complete energ
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- Page 73 and 74: 6 Ion Range and Range Distribution6
- Page 75 and 76: 6.2 Range Distributions 652. the ra
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6.4 Range Distributions from SRIM 7
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Problems 75Kido, Y., Kawamoto, J.:
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7 Displacements and Radiation Damag
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7.3 Displacements Produced by a Pri
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7.3 Displacements Produced by a Pri
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7.5 Ion Damage Energy 83It should b
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7.6 Damage Production Rate and DPA
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7.8 Spikes 87where N is the atomic
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7.9 Damage Distribution from SRIM 8
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Problems 91ReferencesBrinkman, J.A.
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8 Channeling8.1 IntroductionAll the
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8.1 Introduction 95M 1 , Z 1E 0E 1Y
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8.2 General Principles 97and a TF ,
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8.3 The Maximum Range, R max 991000
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8.4 Dechanneling by Defects101Decha
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8.4 Dechanneling by Defects 103SiAM
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References1058000(a) Scattering spe
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9 Doping, Diffusion and Defects inI
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9.1 Junctions and Transistors 1099.
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9.1 Junctions and Transistors 111Fi
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9.1 Junctions and Transistors 113Fi
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9.2 Defects 115VacancySubstitutiona
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9.2 Defects 1179.2.5 Planar Defects
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9.4 Diffusion Mechanisms 119δ Cxt
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9.4 Diffusion Mechanisms 121Fig. 9.
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9.5 Transient Enhanced Diffusion of
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References 125D2v vd / 6= Γ (9.9)S
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10 Crystallization and Regrowth of
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10.2 Epitaxial Growth of Implanted
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10.2 Epitaxial Growth of Implanted
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10.2 Epitaxial Growth of Implanted
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10.2 Epitaxial Growth of Implanted
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10.3 Ion Beam-Induced Enhanced Crys
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10.3 Ion Beam-Induced Enhanced Crys
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References 141As a result of the la
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11 Si Slicing and Layer Transfer: I
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11.3 The Silicon-Hydrogen System 14
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11.3 The Silicon-Hydrogen System 14
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11.4 The Mechanisms Behind the Ion-
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11.4 The Mechanisms Behind the Ion-
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11.4 The Mechanisms Behind the Ion-
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11.4 The Mechanisms Behind the Ion-
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References 157ReferencesBorenstein,
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12 Surface Erosion During Implantat
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12.2 Sputtering of Single-Element T
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12.3 Ion Implantation and the Stead
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12.4 Sputtering of Alloys and Compo
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12.4 Sputtering of Alloys and Compo
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12.5 High-Dose Ion Implantation 169
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12.6 Concentrations of Implanted Sp
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12.7 Concentrations in High-Dose Io
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12.8 Computer Simulation 175orienta
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Problems 177Behrisch, R., Wittmaack
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13 Ion-Induced Atomic Intermixingat
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13.1 Introduction 18160Original Sur
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13.2 Ballistic Mixing 183Temperatur
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13.2 Ballistic Mixing 18513.2.2 Cas
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13.3 Thermodynamic Effects in Ion M
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13.3 Thermodynamic Effects in Ion M
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Suggested Reading 191dominate the r
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14 Application of Ion Implantation
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14.2 Issues During Device Scaling 1
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14.2 Issues During Device Scaling 1
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14.3 Ion Implantation in Advanced C
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14.3 Ion Implantation in Advanced C
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14.3 Ion Implantation in Advanced C
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14.3 Ion Implantation in Advanced C
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14.4 Issues of Ion Implantations Du
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References 209Fig. 14.12. Schematic
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Problems 211ions after beam extract
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214 15 Ion Implantation in CMOS Tec
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216 15 Ion Implantation in CMOS Tec
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218 15 Ion Implantation in CMOS Tec
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220 15 Ion Implantation in CMOS Tec
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222 15 Ion Implantation in CMOS Tec
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224 15 Ion Implantation in CMOS Tec
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226 15 Ion Implantation in CMOS Tec
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228 15 Ion Implantation in CMOS Tec
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230 15 Ion Implantation in CMOS Tec
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232 15 Ion Implantation in CMOS Tec
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234 15 Ion Implantation in CMOS Tec
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236 15 Ion Implantation in CMOS Tec
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238 15 Ion Implantation in CMOS Tec
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240 Table of the elementselement at
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242 Table of the elementselement at
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244 Table of the elementselement at
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246 Table of the elementselement at
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248 Table of the elementselement at
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250 Table of the elementselement at
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252 Table of the elementselement at
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254 Table of the elementselement at
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256 Appendix Bconversions1 nm = 10
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258 Indexclosest approachdistance o
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260 Indexrepulsive 14restoring 13fo
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262 Indexrecoil implantation 183rec