Ion Implantation and Synthesis of Materials - Studium

363 Dynamics of Binary Elastic Collisions3.2 Write a simple expression for E 1 /E 0 and E 2 /E 0 in backscattering (θ = 0°)and right angle scattering (θ = 90°) for M 1 = M 2 , M 1 > M 2 , and M 1 < M 2 .What are the allowed solutions?3.3 What is the maximum energy transferred to electrons, silicon atoms, andcopper atoms by incident 100 keV electrons, silicon ions, and copperions?3.4 In the laboratory system, we have arsenic ions at 100 keV scattered fromsilicon atoms at θ = 10°.sdf(a) What is v 1 , v 2 , φ, and E 2 in the laboratory system?(b) What is v ion , θ c , and φ c in the center-of-mass system?3.5 Prove that l= Mrv θ approaches l = Mv 0 b for r approaching infinity ((3.24)and (3.25)).3.6 Consider a 2 MeV 4 He incident on gold (pure Coulomb potential)(a) Calculate the distance of closest approach for a head-on collision(b = 0)(b) What is the value of rmin values of b = 0.5a L and 5a L, where a L isdefined in (2.22)?3.7 Using (3.27) and assuming a pure Coulomb potential, calculate the valueof r min for a 100 keV boron (Z 1 = 5) on silicon (Z 2 = 14) for an impactparameter b = 1 nm. What is the value of ε (3.30)? What is thesignificance of your answers?