Ion Implantation and Synthesis of Materials - Studium

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200 14 Application of Ion Implantation Techniques in CMOS Fabricationangle tilted implants, called halo implants, are performed. Finally, the deep S/Dion implantations are performed after the formation of gate spacers. To achievedifferent implantation purposes, the dose and the energy requirement of the aboveimplantations can vary by several orders of magnitudes. Figure 14.7 shows thedesired dose and energy for the above implantations. The aim of each implantationstep will be further discussed in the following sections.Fig. 14.6. Application of ion implantations in advanced CMOS structure at several stages ofthe process. (a) Ion implants for retrograde well formation, punch-through-stop, andthreshold voltage adjust; (b) shallow source/drain (S/D) implant and (c) halo implant
14.3 Ion Implantation in Advanced CMOS Device Fabrication 201Fig. 14.6. Application of ion implantations in advanced CMOS structure at several stagesof the process. (d) Nitride spacer formation; and (e) deep source/drain (S/D) implantFig. 14.7. Dose and energy requirement for major implantations steps in CMOS devicefabrications (modified from Rubin and Poate 2003)
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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Page 247 and 248: References 237No. of implants504540
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Appendix A 251element atomicnumber(
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Appendix A 253element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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