Ion Implantation and Synthesis of Materials - Studium

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156 11 Si Slicing and Layer Transfer: Ion-CutSiliconHydrogenFig. 11.12. Schematic illustration of the H-platelet formation and development into H 2 gasbubblesIt appears that, due to their low surface energy, the H–H planes that form inhydrogen-implanted Si provide a favorable site for the formation and growth of H 2gas bubbles. During further heat treatment the H 2 gas bubbles grow in size viaOstwald ripening. Finally, at a critical anneal duration or anneal temperature, theH bubbles coalesce and lead to the propagation of a crack through the wholesilicon crystal.It is apparent that the depth region with highest H platelet concentrationbecomes the location of highest H 2 gas bubble concentration and ultimatecleavage. Thus the Ion-Cut takes place at the peak of the implantation damageprofile and not at the region of highest H concentration.Repeatedly applying the Ion-Cut process enables the production of advancedcircuits, which utilize multiple layers of SOI-type device silicon. These circuitscould allow the combination of electrical and optical signal processing into asingle chip, resulting in applications such as in the entertainment and communicationtechnology. To date, the Ion-Cut process has been applied to a variety ofmaterials, including germanium, silicon-carbide, diamond thin films, and GaSb,proving the versatility of this layer transfer process.
References 157ReferencesBorenstein, J.T., Corbett, J.W., Pearton, S.J.: Kinetic model for hydrogen reactions inboron-doped silicon. J. Appl. Phys. 73, 2751 (1993)Bruel, M., Aspar, B., Charlet, B., Maleville, C., Poumeyrol, T., Soubie, A., Auberton-Herve, A.J., Lamure, J.M., Barge, T., Metral, F., Trucchi, S.: ‘Smart cut’: a promisingnew SOI material technology, p.178. Proc. IEEE Tucson, Arizona. Piscataway, NJ(1995)Capizzi, M., Mittiga, A.: Hydrogen in crystalline silicon: a deep donor? Appl. Phys. Lett.50, 918 (1987)Cerofolini, G.F., Meda, L., Balboni, R., Corni, F., Frabboni, S., Ottaviani, G., Tonini, R.,Anderle, M., Canteri, R.: Hydrogen-related complexes as the stressing species in highfluence,hydrogen-implanted, single-crystal silicon. Phys. Rev. B 46, 2061 (1992)Chabal, Y.L., Weldon, M.K., Caudano, Y., Stefanov, B.B., Raghavachari, K.: Spectroscopicstudies of H-decorated interstitials and vacancies in thin-film silicon exfoliation.Physica B 273-274, 152 1999Chu, W.K., Kastl, R.H., Lever, R.F., Mader, S., Masters, B.J.: Distribution of irradiationdamage in silicon bombarded with hydrogen. Phys. Rev B, 16, 3851 (1977)Höchbauer, T., Nastasi, M., Mayer, J.W.: Hydrogen blister depth in boron and hydrogencoimplanted n-type silicon. Appl. Phys. Lett. 75, 3938 (1999)Höchbauer, T., Misra, A., Verda, R., Nastasi, M., Mayer, J.W., Zheng, Y., Lau, S.S.:Hydrogen-implantation induced silicon surface layer exfoliation. Phil Mag. B 80, 1921(2000)Höchbauer, T., Misra, A., Nastasi, M., Mayer, J.W.: Investigation of the cut location inhydrogen implantation induced silicon surface layer exfoliation. J. Appl. Phys. 89,5980 (2001)Ichimiya, T., Furuichi, A.: On solubility and diffusion coefficient of tritium in singlecrystals of silicon. Int. J. Appl. Rad. Isot. 19, 573 (1968)Johnson, N.M, Burnham, R.D., Street, R.A., Thornton, R.L.: Hydrogen passivation ofshallow-acceptor impurities in para-type GaAs. Phys. Rev. B 33, 1102 (1986)Johnson, N.M, Ponce, F.A., Street, R.A., Nemanich, R.J.: Defects in single-crystal siliconinduced by hydrogenation. Phys. Rev. B 35, 4166 (1987)Leitch, A.W.R., Weber, J., Alex, V.: Formation of hydrogen molecules in crystallinesilicon. Mat. Sci. and Eng. B 58, 6 (1999)Paine, B.M., Hurvitz, N.N., Sperious, V.S.: Strain in GaAs by low-dose ion implantation.J. Appl. Phys. 61, 1335 (1987)Tesmer, J.R., Nastasi, M. (eds.): Handbook of Modern Ion Beam Analysis. MaterialsResearch Society, Pittsburgh, PA (1995)Tkachev, V.D., Holzer, G., Chelyadinskii, A.R.: Damage profiles in ion implanted silicon.Phys. Stat. Sol. (a) 85, k43 (1984)Van de Walle, C.G., Denteneer, P.J.H., Bar-Yam, Y., Pantelides, S.T.: Theory of hydrogendiffusion and reactions in crystalline silicon. Phys. Rev. B 39, 10791 (1989)
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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Page 118 and 119: 108 9 Doping, Diffusion and Defects
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206 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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