Ion Implantation and Synthesis of Materials - Studium

Contentsxi7.9 Damage Distribution from SRIM........................................................... 89References.............................................................................................. 91Suggested Reading................................................................................. 91Problems................................................................................................. 918 Channeling.................................................................................................... 938.1 Introduction ............................................................................................ 938.2 General Principles .................................................................................. 968.3 The Maximum Range, R max .................................................................... 998.4 Dechanneling by Defects ..................................................................... 100References............................................................................................ 105Problems............................................................................................... 1069 Doping, Diffusion and Defects in Ion-Implanted Si .................................. 1079.1 Junctions and Transistors ..................................................................... 1079.1.1 Bipolar Transistors...................................................................... 1099.1.2 Metal-Oxide-Semiconductor Field-Effect Transistors ............... 1109.1.3 Complementary Metal Oxide Semiconductor Devices .............. 1129.2 Defects.................................................................................................. 1149.2.1 Point Defects ............................................................................... 1149.2.2 Native Defects and Shallow Dopants ......................................... 1149.2.3 Deep Level Centers..................................................................... 1159.2.4 Line Defects ................................................................................ 1169.2.5 Planar Defects ............................................................................. 1179.2.6 Volume Defects........................................................................... 1179.3 Fick’s First and Second Law of Diffusion ........................................... 1189.3.1 Diffusion Coefficient .................................................................. 1199.3.2 Diffusion of Doping Atoms into Si............................................. 1199.4 Diffusion Mechanisms ......................................................................... 1199.4.1 Interstitial Mechanism................................................................. 1219.4.2 Substitutional or Vacancy Mechanism ....................................... 1219.4.3 Interstitial–Substitutional Mechanism ........................................ 1219.4.4 Interstitialcy and the Kick-Out Mechanism................................ 1229.5 Transient Enhanced Diffusion of Boron .............................................. 1229.6 Irradiation–Enhanced Diffusion........................................................... 124References............................................................................................ 125Problems............................................................................................... 12610 Crystallization and Regrowth of Amorphous Si ........................................ 12710.1 Introduction ........................................................................................ 12710.2 Epitaxial Growth of Implanted Amorphous Si .................................. 12910.3 Ion Beam-Induced Enhanced Crystallization..................................... 13710.4 Laser Annealing of Si......................................................................... 140References .......................................................................................... 141Problems............................................................................................. 142