Ion Implantation and Synthesis of Materials - Studium

References 209Fig. 14.12. Schematic illustration of (a) Coulomb explosion of the beam, (b) beam blow-upand (c) the asymmetric doping caused by tilted beamBefore the implementation of ion implantation in semiconductor devicefabrications, semiconductors could not be properly termed “doped” because ofsevere contamination issues that arose during the then state-of-the-art drive-indiffusion doping process. These contamination issues were completely eliminatedby the advent of semiconductor doping by ion implantation. The unique featuresof ion implantation relevant to device fabrication are its accurate control of thedose, depth, and purity of the implanted ions; high processing throughput; andhigh reproducibility of the doping process.As we discussed in this chapter, ion implantation also plays a crucial role indevice scaling. In fact, today’s integrated circuits would not be possible withoutimplantations. Furthermore, the design evolution of transistor electronics has beencritically linked to the progress in the development of high current ion implantersat ever lower and higher energies. Continuing trends towards smaller device sizesare pushing ion implantation into previously unexplored territory. While thesetrends present significant challenges in device development, it is clear that dopingby ion implantation is the tool of choice to meet these and future challenges in theevolution of the semiconductor industry.ReferencesJaeger, R.C.: Modular series on solid state devices. In: Neudeck, G.W., Pierret, R.F. (eds.)Introduction to Microelectronic Fabrication, vol. V. Addison-Welsley, Massachusetts(1988)Kanaya, K., Koga, K., Toki, J.: Phys E: Sci. Instrum. 5, 641–648 (1972)