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Ion Implantation and Synthesis of Materials - Studium

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IndexAlpha particle 8amorphization 128amorphouscrystallization kinetics 138phase 117Si 127solid 3analyzer magnet 216angular differential scatteringcross-section 37momentum 31anomalous dopant diffusion 195areal density 6atomicdensities 5, 7jump frequency 124mass unit 8number 2volume 6Avogadro’s number 6Backscattered particles 94base 109beamline architectures 215beamangular alignment 232blow-up 208ribbon 234scan mechanism 234shadowing effect 208size expansion 216steering 232transport 223travel path length effect 234utilization 226binary collisions 23binding energy 12bipolar transistor 109amplifier 110switch 110Bohratom 8radius 9, 15screening length 19velocity 9Calculationsprojected range 69range 67straggling 70cascade 86energy 127ion beam mixing 184temperature 87center-<strong>of</strong>-masscoordinates 27total energy 29velocity 28central forceenergy conservation 31force field 12motion 30centrifugal energy 32channel area 102channeling 93critical angle 95, 97damage 105dechanneling 98, 100defects 94distribution 93energy loss 97implantation 93, 102impurity atoms 94ion trajectories 97maximum range 99measurements 130range 93scattering yield 94charge neutralization 208classical theory, scattering 24257

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