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72 6 Ion Range and Range Distribution6.4 Range Distributions from SRIMThe stopping and range of ions in matter can be calculated in a comprehensivecomputer program, entitled SRIM, which is co-authored by Ziegler and Biersack(http://www.srim.org/). Stopping/range tables obtained from analytical calculationsand Monte Carlo calculations of the transport and range of ions in matter(TRIM) are all given. Background information, instructions, tutorials, and legalnotices are included.As an example, Fig. 6.5 gives the SRIM output for analytically derived valuesfor an As ion implanted into Si at an implant energy of 50 keV. The output lists ionenergy, dE/dx| e (14.28 eV Å −1 ), dE/dx| n (121.6 eV Å −1 ), projected range (388 Å),longitudinal straggling (124 Å), and lateral straggling (96 Å). Only one ion energywas chosen in this case, and a complete range of energies also could have beentabulated.Fig. 6.5. SRIM output for analytical-derived values for an As ion implanted into Si at animplant energy of 50 keV
6.4 Range Distributions from SRIM 73Fig. 6.6. The ion trajectory for a single 50 keV As ion in Si. Results from SRIM MonteCarlo calculationsFig. 6.7. The ion trajectory for of five 50 keV AS ions in Si. Results from SRIM MonteCarlo calculationsFigure 6.6 shows one ion track and Fig. 6.7 shows five superimposed ion tracksfrom SRIM Monte Carlo calculations for 50 keV As in Si. These figures illustratethe irregular nature of the ion tracks and reflect the collisions between As and Si
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
Page 33 and 34: 3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109: 98 8 ChannelingThe channeling effec
Page 110 and 111: 100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
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122 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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