Ion Implantation and Synthesis of Materials - Studium

210 14 Application of Ion Implantation Techniques in CMOS FabricationLaw, M.E., Rafferty, C.S., Chin, G., Lin, C.C., Hansen, S.E.: User’s Reference Manual(SUPREM), Stanford University (1986)Muller, R.S., Kamins, T.I.: Device Electronics for Integrated Circuits, 2nd edn. Wiley, NewYork (1986)Ohzone, T., Shimura, H., Tsuji, K., Hirao, T.: Silicon-gate n-well CMOS process by fullion-implantation technology. IEEE Trans. Electron Devices, 27, 1789 (1980)Park, D-G., Cho, H-J., Yeo, I-S., Roh, J-S., Hwang, J-M.: Boron penetration in p +polycrystalline-Si/Al 2 O 3 /Si metal-oxide-semiconductor system. Appl. Phys. Lett. 77,2207−2209 (2000)Quevedo-Lopez, M.A., El-Bouanani, M., Kim, M.J., Gnade, B.E., Wallace, R.M., Visokay,M.R., Li-Fatou, A., Bevan, M.J., Colombo, L.: Phosphorus and arsenic penetrationstudies through HfSi xOy and HfSi xOyNz films. Appl. Phys. Lett. 81, 1609−1611(2002)Rubin, L., Poate, J.: Ion Implantation in silicon technology. Indus. Physicist 9(3), 12 (2003)Schaber, H., Criegern, R.V., Weitzel, I.: Analysis of polycrystalline Si diffusion sources bysecondary ion mass spectrometry. J. Appl. Phys. 58, 4036−4042 (1985)Shao, L., Chen, J., Zhang, J., Tang, D., Patel, S., Liu, J., Wang, X., Chu, W-K.: Using pointdefect engineering to reduce the effects of energy nonmonochromaticity of B ionbeams on shallow junction formation. J. Appl. Phys. 96, 919−921 (2004)Wolf, S., Tauber, R.N.: Silicon Processing for the VLSI Era Volum1-Process Technology,pp. 261. Lattice, California (1986)Yau, L.D.: A simple theory to predict the threshold voltage of short-channel IGFET’s. SolidState Electron 17, 1059–1063 (1974)Suggested ReadingsEinspruch, N.G., Gildenblat, G.S.: VLSI Electronics Microstructure Science, AdvancedMOS Device Physics, vol. 18. Academic, California (1989)Ghandi, S.K.: VLSI Fabrication Principles: Silicon and Gallium Arsenide. Wiley, NewYork (1994)Grove, A.S.: Physics and Technology of Semiconductor Devices. Wiley, New York (1967)Mayer, J.W., Lau, S.S.: Electronic Materials Science: For Integrated Circuits in Si andGaAs. Macmillan, New York (1990)Rimini, E.: Ion Implantation: Basics to Device Fabrication. Kluwer, Boston (1995)Sze, S.M.: VLSI Technology. McGraw-Hill, New York (1988)Problems14.1 In the drift mode (defined in Sect. 14.1.1), an ion implanter is used toextract 10 keV B + ions and the measured B + beam current is 2 mA. If thesame implanter is used to extract 1 keV B + ions, what is the estimated B +beam current?14.2 The same implanter in 14.1 is modified into deceleration mode (definedin Sect. 14.1.1), in which a reverse bias of E 1 (10 keV) is applied to the