Ion Implantation and Synthesis of Materials - Studium

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98 8 ChannelingThe channeling effect can be seen most clearly in tungsten, which is characterizedby small-amplitude thermal vibrations of atoms. Consequently, dechanneling ofparticles will be weak. In this case, the three sections corresponding to the threetypes of trajectory shown in Fig. 8.5 are quite pronounced on the concentrationdistribution curve, as shown in Fig. 8.5. Particles scattered by angles ψ >ψ c onentering the crystal belong to the first group, A. Their ranges roughly correspondto the case of an amorphous target. With constant increase in transverseenergy, particles of the second group, B, having greater oscillation amplitudes inthe channels, are dechanneled in the depth section between the two main peaks.Particles almost coming to a complete standstill in the channels correspond to thethird group, C.ACBACB(a) Oblique IncidenceCCBAB(b) Perfectly AlignedAFig. 8.4. Schematic representation of ion trajectories for axial channeling. The crystallattice is depicted as a set of atomic “strings,” i.e., the shaded rows. (a) Trajectories forvarious angles of incidence, ψ, relative to the lattice row: B and C represent trajectories forψ values less than the critical angle, and A for values greater than the critical angle. (b)Trajectories for parallel incidence as a function of impact position (after Mayer et al. 1970)
8.3 The Maximum Range, R max 99100042K Concentration (% per mg/cm2 )10010'Amorphous'RangeA B C1. 00 0.4 0.8 1.2 1.6 2.0Depth (mg/cm2)Fig. 8.5. The observed range distribution of 500 keV42 K ions injected as 25°C along the〈111〉 direction in W. Note that in W, 1 mg cm −2 is equivalent to 0.52 µm. (after Mayeret al. 1970)8.3 The Maximum Range, R maxThe ranges of ions with E = 50–150 keV along the main crystallographicdirections in the crystal can exceed their ranges in an amorphous target by factorsof 2–50. If an ion enters the central part of a low-index axial or planner channel,then nuclear stopping will be reduced considerably. Considering that stopping ofchanneled ions is determined by reaction with electrons of the crystal, and that thestopping power S e (E) is proportional to E 1/2 in the velocity-proportional stoppingregime (Nastasi et al. 1996), we have
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 110 and 111: 100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
Page 138 and 139: 128 10 Crystallization and Regrowth
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148 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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