Ion Implantation and Synthesis of Materials - Studium

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192 13 Ion-Induced Atomic Intermixing at the Interface: Ion Beam MixingJohnson, W.L., Cheng, Y.-T., Van Rossum, M., Nicolet, M.-A.: When is thermodynamicsrelevant to ion-induced atomic rearrangements in metals? Nucl. Instrum. Meths. B7/8,657 (1985)Mayer, J.W., Lau, S.S.: Ion beam mixing. In: Poate, J.M., Foti, G., Jacobson, D.C. (eds.)Surface Modification and Alloying by Laser, Ion, and Electron Beams, p. 241. Plenum,New York (1983)Nastasi, M., Mayer, J.W.: Ion beam mixing in metallic and semiconductor materials. Mater.Sci. Rep. R12, 1 (1994)Problems13.1 The mean square diffusion distance x 2 for a random-walk diffusion2 2process is x = nr = 6Dt, where n is the number of jumps and r isthe jump distance. Assume that the cascade volume can be modeled by agas, then n = vt/r where v is the mean speed of the ions in thecascade. Assume that the energy deposited in the cascade is 1 eV atom −1and that the cascade lifetime is 10 −11 s(a) What is D in the cascade?(b) What is x ?13.2 Using the thermodynamic equations for mixing [(13.7) and (13.8)]and assuming a deposited energy F D (E) = 4 × 10 3 eV nm; atomicdensity N = 6 × 10 22 atoms cm −3 ; displacement energy E d = 25 eV; and∆H mix = 90 kJ g-atoms −1 ,(a) What is the cascade temperature for 4Dt/φ = 15 nm 4 and 〈r 2 〉 1/2 = 1and 5 nm?(b) What is the cascade temperature for 4Dt/φ = 30 nm 4 and 〈r 2 〉 1/2 = 1and 5 nm?13.3 Using (13.11), calculate the average alloy cohesive energy in eV atom −1assuming X A = X B = 0.5 for(a) Ni/Al (∆H mix = 12.2 kcal mol −1 )(b) Au/Ag (∆H mix = 0)(c) C Pt/Ti (∆H mix = 30 kcal mol −1 )13.4 Calculate the mixing rate [(13.10)] using the thermodynamic modelfor Ni/Al, Au/Ag, and Pt/Ti assuming a deposited energy ofF D = 500 eV nm −1 .13.5 Calculate 〈r 2 〉 1/2 for a system with N = 6 × 10 22 atoms cm −3 underirradiation conditions where D irr t/φ is 0.5 nm 4 and F D is 2,000 eV nm.(a) If A is the sputtering species, the sputtering yield Y must be belowwhat value if the ratio of A/B is to exceed unity at steady state?
14 Application of Ion Implantation Techniquesin CMOS FabricationContributed by Lin Shao, Los Alamos National Laboratory14.1 IntroductionThis chapter deals with ion implantation in complementary metal oxidesemiconductor (CMOS) fabrications. CMOS has become the dominant MOStechnology since its invention in the 1960s. The number of transistors integratedon a die tends to double every 14–18 months. This is known as Moore’s Law. Thisrequires a continuous reduction in the size of CMOS devices. Given that there isgreater complexity in fabricating n- and p-channel CMOS devices relative to otherdevices, reducing the size of CMOS devices faces fundamental physicallimitations, such as short-channel effects and hot-electron effects. These issueswill be discussed later in this chapter. Some of these complexity-derivedlimitations have been alleviated by the use of ion implantation, which is wellsuited for current integration processes.14.2 Issues During Device ScalingTo maintain a proper device function during device size scaling, the thresholdvoltage, V T , must not change significantly. The threshold voltage is defined as thevalue of the gate voltage needed to induce a conducting channel under the gateoxide. The threshold voltage is given byV = V + V + V + V (14.1)T ms ox d iwhere V ms is the work function difference between the gate and the Si substrate.The work function of a material is the minimum amount of work required to movean electron from its Fermi level to the vacuum level. V ox denotes the fixed chargeat the oxide–silicon interface. V d is due to the charge in the depletion region, andV i is the voltage needed to invert the surface. A major component that contributesto the threshold voltage is V d , which can be expressed as193
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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Page 152 and 153: 142 10 Crystallization and Regrowth
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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