Ion Implantation and Synthesis of Materials - Studium

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48 4 Cross-Section4.7 In Rutherford scattering, the potential is unscreened Coulomb. The powerparameter for this potential is m = 1. Derive the Coulomb differentialcross-section using the power-law approximation and compare to theRutherford cross-section given byd σθ (c) ⎛ α 1= ⎜⎞⎟ 4dΩ⎝4Ec⎠ sin ( θc/2)2.
5 Ion Stopping5.1 IntroductionWhen an energetic ion penetrates a solid, it undergoes a series of collisions withthe atoms and electrons in the target. In these collisions the incident particle losesenergy at a rate of dE/dx of a few to 100 eV nm −1 , depending on the energy, mass,and atomic number of the ion as well as on the mass, atomic number, and densityof the substrate material. The energy-loss mechanisms are discussed in the nextsection, as we are concerned here with the penetration depth, or range, R, of theions (Fig. 3.1). The range R is determined by the rate of energy-loss along the pathof the ionR =∫0E01d E,d E/dx(5.1)where E 0 is the incident energy of the ion as it penetrates the solid. The sign ofdE/dx is negative, as it represents the energy-loss per increment of path, althoughtabulated values are given as positive quantities.The main parameters governing the range or energy-loss rate are the energy, E 0 ,and atomic number, Z 1 , of the ion and the atomic number, Z 2 , of the substrate if weexclude the effect of the orientation of the crystal lattice. As the incident ion penetratesthe solid, undergoing collisions with atoms and electrons, the distance traveledbetween collisions and the amount of energy lost per collision are randomprocesses. Hence all ions of a given type and incident energy do not have the samerange. Instead there is a broad distribution in the depths to which individual ionspenetrate. This distribution in ranges is referred to as the range distribution orrange straggling. Further, in ion implantation it is not the total distance R traveledby the ion that is of interest but the projection of R normal to the surface, i.e., thepenetration depth or projected range R p (Fig. 3.1).49
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
Page 7 and 8: xContents4 Cross-Section ..........
Page 10 and 11: Contentsxiii14.3.2 Punch-Through St
Page 12 and 13: 2 1 General Features and Fundamenta
Page 20 and 21: 10 1 General Features and Fundament
Page 22 and 23: 12 2 Particle InteractionsThe restr
Page 24 and 25: 142 Particle Interactions(a)V(r)r 0
Page 26 and 27: 162 Particle InteractionsHowever, a
Page 28 and 29: 182 Particle Interactionswhere the
Page 30 and 31: 202 Particle Interactionsa0.8853a0L
Page 33 and 34: 3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57: Problems 47ReferencesNastasi, M., M
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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Ion Implantation and Synthesis of Materials - Studium

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