Ion Implantation and Synthesis of Materials - Studium

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M. Nastasi J.W. MayerIon Implantationand Synthesisof MaterialsWith131Figures and 10 Tables123
Michael Nastasi, PhDLaboratory Fellow and Team LeaderIon-Solid Interaction and Interface Engineering TeamLos Alamos National Laboratory, MS-K771Los Alamos NM 87545, USAE-mail: nasty@lanl.govJamesW.Mayer,PhDCenter for Solid State ScienceArizona State UniversityTempe, AZ, 85287-1704, USAE-mail: james.mayer@asu.eduLibraryofCongressControlNumber:2006930120ISBN-10 3-540-23674-0 Springer Berlin Heidelberg New YorkISBN-13 978-3-540-23674-0 Springer Berlin Heidelberg New YorkThis work is subject to copyright. All rights are reserved, whether the whole or part of the materialis concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting,reproduction on microfilm or in any other way, and storage in data banks. Duplication ofthis publication or parts thereof is permitted only under the provisions of the German Copyright Lawof September 9, 1965, in its current version, and permission for use must always be obtained fromSpringer. Violations are liable to prosecution under the German Copyright Law.Springer is a part of Springer Science+Business Media.springer.com© Springer-Verlag Berlin Heidelberg 2006The use of general descriptive names, registered names, trademarks, etc. in this publication does notimply, even in the absence of a specific statement, that such names are exempt from the relevant protectivelaws and regulations and therefore free for general use.Typesetting by the Authors and SPiCover design: design & production GmbH, HeidelbergPrinted on acid-free paper SPIN 10864147 57/3100/SPi 543210
Page 4 and 5: To our loved ones
Page 7 and 8: xContents4 Cross-Section ..........
Page 10 and 11: Contentsxiii14.3.2 Punch-Through St
Page 12 and 13: 2 1 General Features and Fundamenta
Page 20 and 21: 10 1 General Features and Fundament
Page 22 and 23: 12 2 Particle InteractionsThe restr
Page 24 and 25: 142 Particle Interactions(a)V(r)r 0
Page 26 and 27: 162 Particle InteractionsHowever, a
Page 28 and 29: 182 Particle Interactionswhere the
Page 30 and 31: 202 Particle Interactionsa0.8853a0L
Page 33 and 34: 3 Dynamics of Binary Elastic Collis
Page 35 and 36: 3.3 Kinematics of Elastic Collision
Page 37 and 38: 3.4 Center-of-Mass Coordinates 27Fi
Page 39 and 40: 3.4 Center-of-Mass Coordinates 29an
Page 41 and 42: 3.5 Motion under a Central Force 31
Page 43 and 44: 3.5 Motion under a Central Force 33
Page 45 and 46: Problems 35The reduced energy for 1
Page 47 and 48: 4 Cross-Section4.1 IntroductionIn C
Page 49 and 50: 4.2 Scattering Cross-Section 39unit
Page 51 and 52: 4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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