Ion Implantation and Synthesis of Materials - Studium

84 7 Displacements and Radiation Damageν(ε)Energy Going Into Atomic Processes10 110 0Al/SiMg/SiSi/SiZn/GeGe/GeBr/SiI/SiI/GeLight/SiHeavy/Si10 -1 10 -2 10 -1 10 0 10 1 10 2 10 3Dimensionless Energy (ε)Fig. 7.4. Energy lost in atomic collisions ν versus particle energy (ε). The dashed linerepresents the limit where all energy is lost in nonionizing events. The solid line is thecalculated value (after Haines and Whitehead 1966)Table 7.1. Total amount of energy available for nuclear collisions, ν p (E 0 )Incident ionE 0 , incident energy (keV)1 3 10 30 100 300 1,000in siliconC 0.80 2.2 5.9 14 27 41 54Si 0.83 2.4 7.3 19 51 100 170Ge 0.84 2.5 7.7 21 63 160 370Sn 0.85 2.5 7.9 22 68 180 460Pb 0.86 2.5 8.0 23 70 190 530in germaniumC 0.74 2.0 5.8 14 30 48 65Si 0.80 2.3 7.2 20 54 110 200Ge 0.85 2.5 7.9 23 69 175 440Sn 0.86 2.5 8.1 24 72 195 530Pb 0.87 2.6 8.2 24 74 210 580After Mayer et al., Ion Implantation in Semiconductors, (Academic Press, New York,1970). Data supplied by P.V. Thomsen (Aarhus University)These energy-loss values include the nuclear-collision contributions from thewhole cascade, taking into account the electronic losses suffered by the knock-onatoms. These values of ν p (E 0 ) for Group IV elements can be used for the adjacentGroup III of V elements without introducing significant errors.