Ion Implantation and Synthesis of Materials - Studium

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92 7 Displacements and Radiation Damage7.5 Using the power law energy-transfer cross-section, calculate the approximatemean free path, (7.11), between Si recoils for both Si and Sb ionswith energy of 1, 10, and 50 keV.7.6 Give a qualitative explanation for the differences in the depths of thedamage peak relative to the implantation concentration peak (see Figs. 7.7and 7.8).
8 Channeling8.1 IntroductionAll theories examined earlier concerning the ranges of ions and radiation damageof materials were based on the assumption that the stopping medium is disordered,i.e., amorphous. In practice, we are dealing with polycrystalline or monocrystallinesubstances. The main parameters determining the range of an ion are its energy, E,its atomic number, Z 1 , and the atomic number of the substrate, Z 2 . In the case ofsingle crystals, the orientation of the substrate and the vibrational amplitude (i.e.,temperature) of the lattice atoms are also important parameters.With single-crystal substrates of Si or GaAs, for example, the orientation ofthe ion beam with respect to the crystallographic axes of the substrate can have apronounced effect on the range distribution. Figure 8.1 shows the rangedistribution in Si for 100 keV As implanted with the beam aligned parallel to the〈100〉 crystal axis (solid line) and oriented away from any crystal axes or planes(dashed line). As is evident in the figure, implantation along crystal axes can leadto a fraction of the total number of ions that penetrate several times Rp.The crystal orientation influence on ion penetration is called channeling or thechanneling effect. When an ion trajectory is aligned along atomic rows, thepositive atomic potentials of the line of atoms steers where the positively chargedion goes within the open space, or channels, between the atomic rows. Thesechanneled ions do not make close-impact collisions with the lattice atoms andhave a much lower rate of energy loss, dE/dx, and hence a greater range than thoseof nonchanneled ions. The depth distribution of channeled ions is difficult tocharacterize under routine implantation conditions. The channeling distributiondepends on surface preparation, substrate temperature, beam alignment, and thedisorder introduced during the implantation process itself. The channeled ions thatpenetrate beyond R p often have a distribution that falls off exponentially withdistance as exp(−x/λ c ), where λ c R .pAnother consequence of channeling is that the energy spectrum of particlesscattered back from a crystal aligned with the beam is dramatically different fromthat of a noncrystalline solid (Fig. 8.2). In the aligned spectrum the scattering yieldfrom the bulk of the solid is reduced by almost two orders of magnitude, anda peak occurs at a position corresponding to scattering from the surface atoms.Both the surface peak and the reduction in yield are due to shadowing – the ability
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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Page 53 and 54: 4.3 Energy-Transfer Cross-Section 4
Page 55 and 56: 4.4 Approximation to the Energy-Tra
Page 57 and 58: Problems 47ReferencesNastasi, M., M
Page 59 and 60: 5 Ion Stopping5.1 IntroductionWhen
Page 61 and 62: 5.3 Nuclear Stopping 51MeV mg −1
Page 63 and 64: 5.3 Nuclear Stopping 531−m1−2mC
Page 65 and 66: 5.4 ZBL Nuclear Stopping Cross-Sect
Page 67 and 68: 5.5 Electronic Stopping 575.5.1 Hig
Page 69 and 70: 5.5 Electronic Stopping 59Table 5.1
Page 71: Problems 61Problems5.1 Calculate th
Page 74 and 75: 64 6 Ion Range and Range Distributi
Page 88 and 89: 78 7 Displacements and Radiation Da
Page 104 and 105: 94 8 Channeling1.00.8Non-aligned Im
Page 106 and 107: 96 8 ChannelingMeV ION BEAMSUBSTITU
Page 108 and 109: 98 8 ChannelingThe channeling effec
Page 110 and 111: 100 8 Channeling4.0Silicon2.0P (mic
Page 112 and 113: 102 8 ChannelingdσσD( ψc) = ∫
Page 114 and 115: 104 8 ChannelingDechanneled fractio
Page 116 and 117: 106 8 ChannelingProblems8.1 Calcula
Page 118 and 119: 108 9 Doping, Diffusion and Defects
Page 138 and 139: 128 10 Crystallization and Regrowth
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142 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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15 Ion Implantation in CMOS Technol
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15.2 Implanters Used in CMOS Proces
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15.3 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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