Ion Implantation and Synthesis of Materials - Studium

4 1 General Features and Fundamental ConceptsLow Dose:Individual RegionsHigh Dose:Amorphous LayerFig. 1.3. A schematic representation of the disorder produced in room-temperatureimplantations of heavy ions at energies of 10–100 keV. At low doses, the highly disorderedregions around the tracks of the ions are spatially separated from each other. The volume ofthe disordered region is determined primarily by the stopping point of the ion and the rangeof the displaced lattice atoms (dashed arrows). At high doses, the disordered regions canoverlap to form an amorphous layer(a)(b)Fig. 1.4. Schematic atomic arrangement of (a) a crystalline solid and (b) an amorphoussolid