Ion Implantation and Synthesis of Materials - Studium

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176 12 Surface Erosion During Implantation: Sputteringfollowed throughout their slowing-down process until their energy falls below apredetermined energy. Usually, the incident ion is followed to a cutoff energy of5 eV, and the surface binding energy is used for the cutoff of the knock-on atoms.Fig. 12.11 compares the SRIM calculated and experimentally determined sputteringyield, Y, versus incident energy for ions incident normal to the surface. Thereis good agreement between SRIM and experimental data in Figs. 12.2 and 12.11.ReferencesAndersen, H.H., Bay, H.L.: Sputtering yield measurements. In: Behrisch, R. (ed.)Sputtering by Particle Bombardment. I. Physical Sputtering of Single Element Solids,Topics in Applied Physics, vol. 47, pp. 145–218. Springer, Berlin (1981)Eckstein, W. Computer Simulations of Ion–Solid Interactions, chap. 12. Springer, Berlin,(1991)Hubler, G.K.: Ion Beam Processing, NRL Memorandum Report 5928. Naval ResearchLaboratory, Washington, DC (1987)Kittel, C.: Introduction to Solid State Physics, 6th edn. Wiley, New York (1987)Liau, Z.L., Mayer, J.W.: Limits of composition achievable by ion implantation. J. Vac. Sci.Technol. 15, 1629–1635 (1978)Liau, Z.L., Mayer, J.W.: Ion bombardment effects on material composition. In: Hirvonen,J.K. (ed.) Treatise on Materials Science and Technology. Academic Press, New York(1980)Matsunami, N., Yamamura, Y., Itikawa, Y., Itoh, N., Kazumata, Y., Miyagawa, S., Morita,K., Shimizu, R., Tawara, H.: Energy dependence of the ion-induced sputtering yieldsof monatomic solids. At. Data Nucl. Data Tables 31, 1–84 (1984)Sigmund, P.: Sputtering by ion bombardment: theoretical concepts. In: Behrisch, R. (ed.)Sputtering by Particle Bombardment. I. Topics in Applied Physics, vol. 47, pp. 9–71.Springer, Berlin Heidelberg New York (1981)Ziegler, J.F., Biersack, J.P., Littmark, U.: The Stopping and Range of Ions in Solids.Pergamon, New York (1985)Suggested ReadingAndersen, H.H.: Ion-bombardment-induced composition changes in alloys and compounds.In: Williams, J.S., Poate, J.M. (eds.) Ion Implantation and Beam Processing, chap. 6.Academic Press, New York (1984)Behrisch, R. (ed.): Sputtering by Particle Bombardment. I. Physical Sputtering of SingleElement Solids, Topics in Applied Physics, vol. 47. Springer, Berlin Heidelberg NewYork (1981)Behrisch, R. (ed.): Sputtering by Particle Bombardment. II. Sputtering of Alloys andCompound, Electron and Neutron Sputtering, Surface Topography, Topics in AppliedPhysics, vol. 52. Springer, Berlin Heidelberg New York (1983)
Problems 177Behrisch, R., Wittmaack, K. (eds.): Sputtering by Particle Bombardment. III.Characteristics of Sputtered Particles, Technical Applications, Topics in AppliedPhysics, vol. 64. Springer, Berlin Heidelberg New York (1991)Matsunami, N., Yamamura, Y., Itikawa, Y., Itoh, N., Kazumata, Y., Miyagawa, S., Morita,K., Shimizu, R., Tawara, H.: Energy dependence of the ion-induced sputtering yieldsof monatomic solids. At. Data Nucl. Data Tables 31, 1–84 (1984)Nastasi, M., Mayer, J.W., Hirvonen, J.K.: Ion–Solid Interactions: Fundamentals andApplications, chap. 9. Cambridge University Press, Cambridge (1996)Sputtering, Y., Yamamura, Y., Itoh, N.: In: Itoh, T. (ed.) Ion Beam assisted Film Growth,chap. 4. Elsevier, Amsterdam (1989)Problems12.1 Consider the case of (1) Si ions incident on Au; and (2) Au ions incidenton Si; both cases for 100 keV incident energies at normal to the sample.Which would have the largest value(a) The dimensionless energy, ε;(b) The electronic energy-loss-rate, dE/dx| e ;(c) Nuclear energy-loss-rate, dE/dx| n ;(d) The projected range, R P(e) Sputtering yield, Y:, (assume binding energy U = 5 eV);(f) Maximum concentration of implanted species.12.2 Calculate the sputtering yield values of Ne, Ar, and Xe incident on Si at45 keV using the expressions for ZBL nuclear stopping given in Chap. 5and a binding energy of 4.6 eV:(a) Compare your values with the data given in Fig. 12.1(b) Calculate values of the dimensionless energy ε for the three cases.Are these ε values in a region where nuclear stopping rates woulddominate? (See Chap. 5.)(c) For a current of 10 µA cm −2 of Ar, now many monolayers(10 15 atoms cm −2 ) would be removed per second.12.3 (a) Calculate the sputtering yields for 45 keV Ge incident on Si(U = 4.5 eV), and compare with the data in Fig. 12.2a for 45 keV Arions incident on Si compare your values with the data given in Fig. 12.1(b) Estimate the maximum concentration of implanted Ge forpreferential sputtering factor values of 2 and 1/212.4 Assume you have a target of Si 50 Ge 50 sputtered by 50 keV Ar ions witha preferential sputtering yield of Si twice that of Ge. AssumeR P (Ar) = 50 nm(a) What is the initial sputter yield ratio Y Si /Y Ge ?(b) What is the steady state yield ratio Y Si /Y Ge ?(c) What is the surface concentration ratio of Si to Ge at steady state?(d) How thick a layer of SiGe must be removed to achieve steady state?
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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Page 136 and 137: 126 9 Doping, Diffusion and Defects
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15.4 Low Energy Productivity: Beam
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15.5 Angle Control 233Fig. 15.13. O
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15.5 Angle Control 235Fig. 15.15. I
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References 237No. of implants504540
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Appendix ATable of the Elementselem
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Appendix A 241elementatomicnumber(Z
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Appendix A 243element atomicnumber(
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Appendix BPhysical constants, conve
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IndexAlpha particle 8amorphization
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Index 259differential cross-section
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Index 261layer transfer 143Lennard-
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Index 263thermodynamiceffect ion be
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