Ion Implantation and Synthesis of Materials - Studium

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262 Indexrecoil implantation 183recombination center 116energy 34ZBL energy 55regrowth rate 131orientation 137replacement collision 80, 86retrograde wells 198, 215formation 202implants 203reverse bias 107RF linac beamlines 219ribbon beam 234Rutherford backscattering 130Rutherford cross-section 101Scatteringangle 26, 29center-of-mass 27classical theory 24cross-section 37screened Coulomb potential 16screening distance 19Thomas-Fermi 19universal 18screening function 16Bohr 17Lenz-Jensen 171Lindhard 17Moliere 179Sommerfeld asymptotic 16Thomas-Fermi 17universal 17–18screening lengthBohr 19Firsov 19Lindhard 19Thomas-Fermi 19universal 18shadowing 93shallow dopant impurities 115shallow junction formation 223short-channel effect 193, 195, 199short-range interatomic force 12simulationSRIM 72, 89, 175TRIM 72Siamorphous 127slicing 143silicon-on-insulator 144SIMOX 145single element targets sputtering 159Smart-Cut TM 143SOI 144solid angle 38, 41solid solubility 120source implant 205space charge effect 207, 211space charge neutralization 224space charge region 107spreading range 64spike 86displacement 86quench time 88thermal 87time 87sputteringalloy 164angular dependence 163composition changes 166computer simulation 175deposited energy 160ion implantation 159linear cascade 160materials factor 160polyatomic target 164preferential 165single element targets 159steady state 162yield 159,standard deviationrange distribution 66stoppingcross-section 51electronic 56nuclear 51SRIMstacking faults 117straggling 2, 65polyatomic 70SUPREM 196system, ion implantation 2Table of elements 239tandem accelerators 222temperaturecollision cascade 87spike 88thermal spike 87
Index 263thermodynamiceffect ion beam mixing 187Thomas-Fermi screeningdistance 19function 16length 19threshold voltage 193adjustment 199, 202, 214total cross-section 39two-particle scattering 24transient enhanceddiffusion 122, 196transferred energy 29transverse projected range 65TRIM 72twins 117twin well 202Universal screening length 18Vacancy concentration 133charge state 134vacancy-interstitial defects 78velocityBohr 8growth 131of light 8volume, atomic 6volt, electron 6Wafer handling 221work function 193Yield, sputtering 160ZBLNuclear stopping 54universal screening function 18
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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180 13 Ion-Induced Atomic Intermixi
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194 14 Application of Ion Implantat
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Page 223 and 224: 15 Ion Implantation in CMOS Technol
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271: Index 261layer transfer 143Lennard-
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