Ion Implantation and Synthesis of Materials - Studium

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228 15 Ion Implantation in CMOS Technology: Machine Challengesα+ --β+Fig. 15.9. Multiwafer batch processing chamber, showing 13-wafer process disk andmultiaxis tilt capabilityR 2R 3R 1Fig. 15.10. The total scan area on a typical multiwafer system is characterized by threeradii. R 1 and R 2 define an annulus sufficiently large to include the required overscan, and R 3locates the centerline of the wafer ringwhere n is the number of wafers of radius R w , and R 1 and R 2 are the inner andouter radii of the annulus over which the beam scans (see Fig. 15.10).
15.4 Low Energy Productivity: Beam Utilization 229Single-Wafer Endstation: Linear Mechanical Scan with ScannedSpot BeamA processing chamber in which only one wafer is implanted at a time is typicallyemployed for medium current implanters. The endstation consists of a singlescanning arm capable of linear motion of up to 140–200 mm s −1 . over a range ofup to 400 mm. The wafer is typically held on an electrostatic chuck which may begas-cooled to maintain adequate wafer temperature.The wafer can usually be tilted at angles of up to 60° and rotated through a full360° either while on the chuck or prior to being placed there. When operating atmaximum throughput, a typical single-wafer architecture can process up to350 wph.For the single-wafer endstation described above, (15.2) can be rewritten as:πRϒ=(2R + d + 2 d )(2R + d + 2 d )2ww beam ta−xw beam ta−y(15.4)where d beam refers to the beam diameter, and d ta−x,y refers to the effective distancefor the beam to decelerate and reaccelerate for the x and y directions, seeFig. 15.11. It should be apparent from (15.5) and Fig. 15.11 that a relativelysimple way to improve beam utilization (and hence throughput) for the singlewaferplatform is to “paint” not a rectangular region but a circular region only, theradius of which would be R = R w + 1/2d beam + d ta−effective . This eliminates wastingbeam on the “corners” of the rectangular region.Equation (15.2) now becomes2wRϒ=⎛ 1⎜R + d + 2d⎝ 2w beam ta−effective2⎞⎟⎠(15.6)Single-Wafer Endstation: Linear Mechanical Scan with UnscannedRibbon BeamAchieving uniformity with this type of a system necessarily requires a beambroader than the wafer. Assuming a beam 10% wider than the wafer, (15.2) nowbecomesw2wπRϒ=2(1.1 R )( h + d )beamta(15.7)
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M. Nastasi J.W. MayerIon Implantati
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To our loved ones
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xContents4 Cross-Section ..........
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Contentsxiii14.3.2 Punch-Through St
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2 1 General Features and Fundamenta
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10 1 General Features and Fundament
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12 2 Particle InteractionsThe restr
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142 Particle Interactions(a)V(r)r 0
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162 Particle InteractionsHowever, a
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182 Particle Interactionswhere the
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202 Particle Interactionsa0.8853a0L
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3 Dynamics of Binary Elastic Collis
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3.3 Kinematics of Elastic Collision
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3.4 Center-of-Mass Coordinates 27Fi
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3.4 Center-of-Mass Coordinates 29an
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3.5 Motion under a Central Force 31
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3.5 Motion under a Central Force 33
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Problems 35The reduced energy for 1
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4 Cross-Section4.1 IntroductionIn C
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4.2 Scattering Cross-Section 39unit
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4.2 Scattering Cross-Section 41Rdθ
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4.3 Energy-Transfer Cross-Section 4
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4.4 Approximation to the Energy-Tra
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Problems 47ReferencesNastasi, M., M
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5 Ion Stopping5.1 IntroductionWhen
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5.3 Nuclear Stopping 51MeV mg −1
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5.3 Nuclear Stopping 531−m1−2mC
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5.4 ZBL Nuclear Stopping Cross-Sect
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5.5 Electronic Stopping 575.5.1 Hig
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5.5 Electronic Stopping 59Table 5.1
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Problems 61Problems5.1 Calculate th
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64 6 Ion Range and Range Distributi
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78 7 Displacements and Radiation Da
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94 8 Channeling1.00.8Non-aligned Im
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96 8 ChannelingMeV ION BEAMSUBSTITU
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98 8 ChannelingThe channeling effec
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100 8 Channeling4.0Silicon2.0P (mic
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102 8 ChannelingdσσD( ψc) = ∫
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104 8 ChannelingDechanneled fractio
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106 8 ChannelingProblems8.1 Calcula
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108 9 Doping, Diffusion and Defects
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128 10 Crystallization and Regrowth
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144 11 Si Slicing and Layer Transfe
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160 12 Surface Erosion During Impla
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Page 188 and 189: 178 12 Surface Erosion During Impla
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Page 247 and 248: References 237No. of implants504540
Page 249 and 250: Appendix ATable of the Elementselem
Page 251 and 252: Appendix A 241elementatomicnumber(Z
Page 253 and 254: Appendix A 243element atomicnumber(
Page 265 and 266: Appendix BPhysical constants, conve
Page 267 and 268: IndexAlpha particle 8amorphization
Page 269 and 270: Index 259differential cross-section
Page 271 and 272: Index 261layer transfer 143Lennard-
Page 273: Index 263thermodynamiceffect ion be
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