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Ion Implantation and Synthesis of Materials - Studium

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72 6 <strong>Ion</strong> Range <strong>and</strong> Range Distribution6.4 Range Distributions from SRIMThe stopping <strong>and</strong> range <strong>of</strong> ions in matter can be calculated in a comprehensivecomputer program, entitled SRIM, which is co-authored by Ziegler <strong>and</strong> Biersack(http://www.srim.org/). Stopping/range tables obtained from analytical calculations<strong>and</strong> Monte Carlo calculations <strong>of</strong> the transport <strong>and</strong> range <strong>of</strong> ions in matter(TRIM) are all given. Background information, instructions, tutorials, <strong>and</strong> legalnotices are included.As an example, Fig. 6.5 gives the SRIM output for analytically derived valuesfor an As ion implanted into Si at an implant energy <strong>of</strong> 50 keV. The output lists ionenergy, dE/dx| e (14.28 eV Å −1 ), dE/dx| n (121.6 eV Å −1 ), projected range (388 Å),longitudinal straggling (124 Å), <strong>and</strong> lateral straggling (96 Å). Only one ion energywas chosen in this case, <strong>and</strong> a complete range <strong>of</strong> energies also could have beentabulated.Fig. 6.5. SRIM output for analytical-derived values for an As ion implanted into Si at animplant energy <strong>of</strong> 50 keV

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